CAS: 12024-21-4; Gallium(Iii) Oxide (Metals Basis)

专利信息

专利号:WO-2025086012-A1
优先权日:2023-10-27
标题:Catalyst for the synthesis of methanol from methane and carbon dioxide
发明人：LI CHAO-JUN; SU HUI; HAN JINGTAN
权利人:THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING/MCGILL UNIV
摘要:There is provided a photocatalyst for the direct synthesis of methanol from methane and carbon dioxide. The photocatalyst comprises an AuPd alloy nanoparticles dispersed on a support comprising GaN, InN, AlN, BN, TlN, GaP, InP or a combination thereof. The AuPd alloy nanoparticles are uniformly dispersed on the support such that at least 90% of the AuPd alloy nanoparticles are positioned at a distance of from 1 nm to 15 nm from other AuPd alloy nanoparticles. There is also provided a method of synthesizing methanol from methane and carbon dioxide with a photocatalyst comprising a transition metal dispersed on a support comprising GaN, InN, AlN, BN, TlN, GaP, InP or a combination thereof.

专利号:US-7897135-B2
优先权日:2004-09-27
标 题 :Carbon combustion synthesis of oxides
发明人：MARTIROSYAN KAREN S; LUSS DAN
权利人:UNIV HOUSTON
摘要:The present invention is generally directed to a novel, economic synthesis of oxide ceramic composites. Methods of the present invention, referred to as carbon combustion synthesis of oxides (CCSO), are a modification of self-propagating high-temperature synthesis (SHS) methods in which the heat needed for the synthesis is generated by combustion of carbon in oxygen rather than that of a pure metal. This enables a more economic production of the ceramic material and minimizes the presence of intermediate metal oxides in the product. The reactant mixture generally comprises at least one oxide precursor (e.g., a metal or non metal oxide, or super oxide, or nitride, or carbonate, or chloride, or oxalate, or halides) as a reactant, but no pure metal. Pure carbon in the form of graphite or soot is added to the reactant mixture to generate the desired heat (upon ignition). The mixture is placed in a reactor and exposed to gaseous oxygen. The high-temperature exothermic reaction between the carbon and oxygen generates a self-sustaining reaction in the form of a propagating temperature wave that causes a reaction among the reactants. The reaction proceeds rapidly following ignition, and the final product comprises simple and/or complex oxides of elements present in the oxide precursor(s). CCSO also enables synthesis of oxides that cannot be produced by conventional SHS, such as when the pure metal is pyrophoric (such as Li or La) or such as when it melts at room temperature (e.g., Ga) or such as the combustion heat of the metal is relatively low.

专利号:US-7182812-B2
优先权日:2002-09-16
标题 :Direct synthesis of oxide nanostructures of low-melting metals
发明人：SUNKARA MAHENDRA KUMAR; SHARMA SHASHANK
权利人:UNIV LOUISVILLE RES FOUND
摘要:The bulk synthesis of highly crystalline noncatalytic low melting metals such as beta-gallium oxide tubes, nanowires, and nanopaintbrushes is accomplished using molten gallium and microwave plasma containing a mixture of monoatomic oxygen and hydrogen. Gallium oxide nanowires were 20-100 nm thick and tens to hundreds of microns long. Transmission electron microscopy (TEM) revealed the nanowires to be highly crystalline and devoid of any structural defects. Results showed that multiple nucleation and growth of gallium oxide nanostructures can occur directly out of molten gallium exposed to appropriate composition of hydrogen and oxygen in the gas phase. These gallium oxide nanostructures are of particular interest for opto-electronic devices and catalytic applications.

专利号:US-2005214916-A1
优先权日:2004-03-26
标 题:Biological process for synthesis of oxide nanoparticles
发明人：ABSAR AHMAD; SASTRY MURALI; RAUTARAY DEBABRATA
权利人:COUNCIL SCIENT IND RES
摘要:The present invention provides a biological process for the synthesis of oxide nanoparticles by simple exposure of suitable aqueous metal ions to a hydrolyzing fungus. The method specifically comprises reacting of a suitable electrolyte solution with a hydrolyzing wet fungus.

专利号:US-2009218735-A1
优先权日:2005-08-16
标题:Method of synthesis of ceramics
发明人：ABDUEV ASLAN KHAJIMURATOVICH; ASVAROV ABIL SHAMSUDINOVICH; AKHMEDOV AKHMED KADIEVICH; KAMILOV IBRAGIMKHAN KAMILOVICH
权利人:OTKRYTOE AKTSYONERNOE OBSHCHES
摘要:The present invention relates to producing ceramic targets, which serves as a material source for magnetron, electron-beam, ion-beam and other film applying methods in micro-, opto-, nano-electronics. The aim of the proposed invention is to reduce the doping level of ceramics by non-controllable impurities, to increase a ceramic density and to improve performance characteristics of ceramic targets. In the method for synthesizing the ceramics doped by a low-melting metal consisting in that a mixture of components is pressed and sintered; as a doping additive, the mixture of components contains a low-melting metal and the surface of the main component particles is covered and moistened prior to pressing by the doping metal layer by grinding the mixture of the components. The grinding can be carried out at a melting temperature of the low-melting metal. In a particular case, for the synthesis of zinc oxide ceramic doped with gallium, the mixture of zinc oxide powder with gallium is triturated at a gallium melting temperature. The component mixture can contain a boron compound, as a binder and a doping additive, forming boron oxide during sintering.

专利号:WO-9819964-A1
优先权日:1996-11-04
标题:Method for the synthesis of group iii nitride crystals
发明人：ANGUS JOHN C; ARGOITIA ALBERTO; HAYMAN CLIFF C
权利人:UNIV CASE WESTERN RESERVE; ANGUS JOHN C; ARGOITIA ALBERTO; HAYMAN CLIFF C
摘要:A novel method for the synthesis of Group III nitride crystals is disclosed. The method contemplates the reaction of a liquid form of the Group III nitride metal with active nitrogen. The active nitrogen may be generated by a plasma or the thermal decomposition of ammonia and may be neutral, ionic, excited or a mixture thereof. Using the method of the present invention, the crystalline Group III nitride can be grown at pressures of one atmosphere and below. Polycrystalline films grown by this method are of sufficient quality to show luminescence at room temperature.