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lead(II) acetate trihydrate titanium (IV) butoxide 专利信息
专利号:US-9802833-B2
优先权日:2011-02-22
标 题 :Synthesis of metal oxide-based thermoelectric materials for high temperature applications
发明人:WU YUE; YADAV GAUTAM G; ZHANG GENQIANG
权利人:PURDUE RESEARCH FOUNDATION
摘要:Nanowire synthesis and one dimensional nanowire synthesis of titanates and cobaltates. Exemplary titanates and cobaltates that are fabricated and discussed include, without limitation, strontium titanate (SrTiO 3 ), barium titanate (BaTiO 3 ), lead titanate (PbTiO 3 ), calcium cobaltate (Ca 3 Co 4 O 9 ) and sodium cobaltate (NaCo 2 O 4 ).
专利号:US-7118627-B2
优先权日:2003-12-04
标 题 :Synthesis of colloidal PbS nanocrystals with size tunable NIR emission
发明人:HINES MARGARET A; SCHOLES GREGORY D
权利人:HINES MARGARET A; SCHOLES GREGORY D
摘要:The present invention discloses a method for synthesis of narrowly dipsersed colloidal PbS nanocrystals that offer size-tunable near-infrared emission. The stability and processibility of these near-infrared emitting quantum dots makes them ideal materials for device applications. The use of cost-effective and non-pyrophoric precursors as well as the success of larger scale reactions means the present invention provides a method for the industrial scale production of PbS nanocrystals.
专利号:US-2013015391-A1
优先权日:2009-09-18
标 题:Method for the preparation at low temperatures of ferroelectric thin films, the ferroelectric thin films thus obtained and their applications
发明人:LOUSADA SILVEIRINHA VILARINHO PAULA MARIA; WU AIYING; CALZADA MARIA LOURDES; JIMENEZ RIOBOO RICARDO; BRETOS IGNOS
权利人:CONSEJO SUPERIOR DE INVERSITACIONES CIENTIFICAS; UNIV AVERIRO; LOUSADA SILVEIRINHA VILARINHO PAULA MARIA; WU AIYING; CALZADA MARIA LOURDES; JIMENEZ RIOBOO RICARDO; BRETOS IGNOS
摘要:A processing technology is for the fabrication at low temperatures of ferroelectric crystalline oxide thin films, among others PbZr x Ti 1-x O 3 (PZT) (<400° C. for PZT) with ferroelectric properties appropriate for integration in devices. The method is also for the fabrication of ferroelectric thin films of bronze tungsten (A 2 B 2 O 6 ), perovskite (ABO 3 ), pyrochlore (A 2 B 2 O 7 ) and bismuth-layer (Bi 4 Ti 3 O 12 ) structures, in which A and B are mono, bi-, tri-, tetra- and pentavalent ions. The method is based on the combination of Seeded Diphasic Sol Gel (SDSG) precursors with Photo Chemical Solution Deposition (PCSD) methodology and comprises the main following steps: i) synthesis of a modified metal-organic precursor solution of the desired metal oxide composition with a large photo-sensitivity in the UV wavelength range; ii) preparation by a sol gel process of nanoparticles of the desired composition, similar or dissimilar to the crystalline compound to be obtained from the previous precursor sol; iii) dispersion of the crystalline nanoparticles in the precursor sol to prepare a stable and homogeneous sol-gel based suspension; iv) deposition of the previous suspension onto substrates; v) UV irradiation in air or oxygen of the deposited layer and further thermal treatment in air or oxygen of the irradiated layer at temperatures below 400° C. The method provides for the fabrication of polycrystalline ferroelectric, piezoelectric, pyroelectric and dielectric thin films, dense and without cracks with thickness above 50 nm and below 800 nm on single crystal, polycrystalline, amorphous, metallic and polymeric substrates at low temperatures and with optimised properties, being applicable in microelectronics and optics industries.
专利号:US-6136229-A
优先权日:1998-10-15
标题 :Method for the mechanochemical preparation of high performance ceramics
发明人:CUI CHANGXING; SU JI; BAUGHMAN RAY H
权利人:ALLIED SIGNAL INC
摘要:Disclosed are mechanochemical processes for the synthesis of high performance electroceramics from organometallic precursors, and compositions resulting from the processes.
专利号:US-12147747-B1
优先权日:2021-07-23
标 题 :Area oriented logic synthesis
发明人:ODINAKA IKENNA; MANIPATRUNI SASIKANTH; DOSHI DARSHAK; DOKANIA RAJEEV KUMAR; MATHURIYA AMRITA
权利人:KEPLER COMPUTING INC
摘要:A computer-aided design (CAD) tool is provided for logic optimization and synthesis. The CAD tool executes a process that involves optimizing power, performance, and area (PPA) of a logic circuit by minimizing a number of CMOS gates, and majority and/or minority gates in the circuit and its depth. The CAD tool implements a methodology of optimizing logic synthesis based on a mix of standard cell libraries (such as AND, OR, NAND, NOR, XOR, Multiplexer, full adder, half adder, etc.) and varying input majority and minority gates (where the number of inputs in the minority and majority gates could vary as odd numbers from 3 and above). The standard cell libraries cells may contain minority and/or majority gates.
专利号:US-5858451-A
优先权日:1997-07-29
标 题 :Process for production of solution-derived (Pb,La)(Nb,Sn,Zr,Ti)O3 thin films and powders
发明人:BOYLE TIMOTHY J
权利人:SANDIA CORP
摘要:A simple and rapid process for synthesizing (Pb,La)(Nb,Sn,Zr,Ti)O 3 precursor solutions and subsequent ferroelectric thin films and powders of the perovskite phase of these materials has been developed. This process offers advantages over standard methods, including: rapid solution synthesis (<10 minutes), use of commercially available materials, film production under ambient conditions, ease of lanthanum dissolution at high concentrations, and no heating requirements during solution synthesis. For lanthanum-doped ferroelectric materials, the lanthanum source can be added with total synthesis time less than 10 minutes. Films and powders are crystallized at approximately 650° C. and exhibit ferroelectric properties comparable to films and powders produced by other techniques which require higher crystallization temperatures.