CAS: 12033-62-4; Tantalum(Iii) Nitride

上下游产品

ammonia

📜反应生成氮化钽
参考文献:Wustefeld,Claus
标题:Wustefeld,Claus

专利信息

专利号:US-6096282-A
优先权日:1996-09-10
标题:Instantaneous synthesis of refractory nitrides from solid precursors
发明人：KANER RICHARD B; WALLACE CHARLES H; REYNOLDS THOMAS K
权利人:UNIV CALIFORNIA
摘要:A process for forming high quality crystalline refractory materials, particularly gallium (III) nitride (GaN), from solid precursors. By blending dry reactants, including NH 4 Cl, in an oxygen and moisture free environment, placing the reactants in a reaction vessel and in an inert environment, rapidly exposing the reactants to a temperature in excess of about 225° C. The soluble salt by-products are then extracted from the resultant mixture, leaving high purity crystals of the nitride in the form of a fine powder.

专利号:US-8062756-B2
优先权日:2005-08-26
标题:Stepwise growth of oligomeric redox-active molecules on a surface without the use of protecting groups
发明人：BOCIAN DAVID F; LINDSEY JONATHAN S; JIAO JIEYING
权利人:BOCIAN DAVID F; LINDSEY JONATHAN S; JIAO JIEYING; REGENTS OFT THE UNIVERSITY OF CALIFORNIA; UNIV NORTH CAROLINA STATE
摘要:This invention provides a procedure for growing oligomers via a stepwise process. The oligomers can include porphyrins, which have been previously shown to be attractive candidates for molecular-based information storage. The stepwise synthesis procedure requires no protecting groups, thus eliminating protection/deprotection reactions that add complexity to the process.

专利号:US-12000042-B2
优先权日:2016-12-15
标题 :Sequential infiltration synthesis apparatus and a method of forming a patterned structure
发明人：MAES JAN WILLEM; KNAEPEN WERNER; KACHEL KRZYSZTOF KAMIL; DE ROEST DAVID KURT; JONGBLOED BERT; PIERREUX DIETER
权利人:ASM IP HOLDING BV
摘要:A sequential infiltration synthesis apparatus comprising:n a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T 1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T 2 ; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T 3 in the reaction chamber. The program in the memory is programmed with the first period T 1 longer than the second period T 2.

专利号:US-11970766-B2
优先权日:2016-12-15
标题:Sequential infiltration synthesis apparatus
发明人：RAAIJMAKERS IVO JOHANNES; MAES JAN WILLEM; KNAEPEN WERNER; KACHEL KRZYSZTOF KAMIL
权利人:ASM IP HOLDING BV
摘要:Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising:a reaction chamber constructed and arranged to accommodate at least one substrate;a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated;a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated;a removal flow path to allow removal of gas from the reaction chamber;a removal flow controller to create a gas flow in the reaction chamber to the removal flow pathwhen the removal flow controller is activated; and,a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

专利号:US-2024327300-A1
优先权日:2023-03-29
标 题 :Ceramic synthesis through surface coating of powders
发明人：DEEPAK NITIN; WOO KATHERINE; SHEIL RYAN; ROCHA-ALVAREZ JUAN CARLOS; SUN JENNIFER Y
权利人:APPLIED MATERIALS INC
摘要:Exemplary processing methods may include providing a powder to a processing region of a processing chamber. The methods may include providing one or more deposition precursors to the processing region. The methods may include generating plasma effluents of the one or more deposition precursors. The methods may include depositing a layer of material on the powder in the processing region. The layer of material may include a corrosion-resistant material. A temperature within the processing chamber is maintained at less than or about 700° C.

专利号:TW-I636951-B
优先权日:2012-12-10
标题:One step synthesis of core/shell nanocrystal quantum dots