CAS: 33861-17-5; Trimethyl(Phenylselanyl)Silane
- 英文名称Trimethyl(Phenylselanyl)Silane
- 中文名称三甲基(苯基硒基)硅烷
- 其它别名Silane,trimethyl(phenylseleno)- (9CI); Silane, trimethyl(phenylselenyl)- (8CI); (Phenylseleno)trimethylsilane; (Phenylselenyl)trimethylsilane; (Trimethylsilylseleno)benzene; Phenyl trimethylsilyl selenide; Trimethyl(phenylseleno)silane; Trimethylsilyl phenyl selenide
- CAS编号33861-17-5
- MFCD编号:MFCD00061470
- FDA UNII编号:PH8Y926H8I
- 分子式:C9H14SeSi分子量:229.25
- 产品CID: 1336352
- 产品分类有机原料→分子砌块→芳环类化合物→苯类化合物
- 相似结构搜索
- 产品信息参考
- InChIKey: MRRIPSZDPMMQEO-UHFFFAOYSA-N
- 1S/C9H14SeSi/c1-11(2,3)10-9-7-5-4-6-8-9/h4-8H,1-3H3
- 计算化学: 氢键受体数*氢键供体数*可旋转键数2.0
相似化合物
7072-01-7 2217-60-9 2040-26-8物理性质
MSDS等安全信息
上下游产品
CAS号75-77-4 三甲基氯硅烷 | CAS号1666-13-3 二苯基二硒醚 | CAS号993-07-7 三甲基硅烷 | CAS号645-96-5 5-苯基-1,3,4-恶二唑-2-硫醇 | CAS号72017-00-6 Thallous Phenyl... | CAS号14856-73-6 (4-Nitrobenzyl)... | CAS号14629-56-2 (4-Methoxybenzy... | CAS号14856-75-8 (α-Methylbenzyl... | CAS号18023-53-5 (2-Ethylhexylox... | CAS号18023-52-4 1-Methylheptyl(... | CAS号6996-92-5 苯亚硒酸 | CAS号2857-97-8 三甲基溴硅烷 | CAS号1666-13-3 二苯基二硒醚 | CAS号420-56-4 三甲基氟硅烷合成工艺路线路线简述
📜二苯基二硒醚 以68%的收率获得产物
参考文献:Detty M. R.,J. Org. Chem.,1979,44,No 25,4528-4531
标题:Detty M. R.,J. Org. Chem.,1979,44,No 25,4528-4531
海关参考信息
- 2902200000-苯
- 💡 提示：海关信息按照顺序优先匹配，如需确认的海关信息，请参考相关资料。
- 详情请参考：📖 海关编码查询和海关进出口税则
专利信息
专利号:US-8507040-B2
优先权日:2008-05-08
标题:Binary and ternary metal chalcogenide materials and method of making and using same
发明人：XIAO MANCHAO; LEI XINJIAN; YANG LIU
权利人:XIAO MANCHAO; LEI XINJIAN; YANG LIU; AIR PROD & CHEM
摘要:This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.
专利号:US-8765223-B2
优先权日:2008-05-08
标题 :Binary and ternary metal chalcogenide materials and method of making and using same
发明人：XIAO MANCHAO; YANG LIU
权利人:XIAO MANCHAO; YANG LIU; AIR PROD & CHEM
摘要:This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.
供应商参考报价(招募中)
品牌试剂参考报价(招募中)
📌 第三方产品分析报告
合成参考文献
摘要:Baker, A.; Wirth, T., Science of Synthesis Knowledge Updates, (2017) 1, 198.
摘要:Baker, A.; Wirth, T., Science of Synthesis Knowledge Updates, (2017) 1, 199.
摘要:Baker, A.; Wirth, T., Science of Synthesis Knowledge Updates, (2017) 1, 194.
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