专利号:US-9637507-B2 优先权日:2012-11-14 标 题:Process for the preparation of liquid tin(II) alkoxides 发明人:MEEPOWPAN PUTTINAN; PUNYODOM WINITA; MOLLOY ROBERT 权利人:CHIANG MAI UNIV 摘要:A synthetic process of producing liquid tin(II) alkoxides for use as either catalysts in the synthesis of lactide or as initiators in the polymerization of cyclic ester monomers to yield biodegradable polyesters is described. The synthetic process employs anhydrous tin(II) chloride dissolved in n-heptane mixed with dry diethylamine. Alcohols, ROH, in which the R groups are n-C 4 H 9 , n-C 6 H 13 , and n-C 8 H 17 are added to the reaction mixture and stirred for 12 hours. The reaction mixture is then filtered under nitrogen or argon before being evaporated to dryness to yield the three tin(II) alkoxides, namely: tin(II) n-butoxide, tin(II) n-hexoxide, and tin(II) n-octoxide. All three tin(II) alkoxides are viscous, dark yellow liquids which are highly soluble in most common organic solvents. Furthermore, they can all be stored under an inert atmosphere for long periods without any significant change in their reactivity and, therefore, in their effectiveness as catalysts/initiators.
专利号:US-2006269762-A1 优先权日:2005-03-02 标 题 :Reactively formed integrated capacitors on organic substrates and fabrication methods 发明人:PULUGURTHA MARKONDEYA R; BALARAMAN DEVARAJAN; TUMMALA RAO; ABOTHU ISAAC R 权利人:PULUGURTHA MARKONDEYA R; BALARAMAN DEVARAJAN; TUMMALA RAO; ABOTHU ISAAC R 摘要:Disclosed are organic-compatible thin film processing techniques with reactive (such as Ti) layers for embedding capacitors into substrates. Hydrothermal synthesis allows direct deposition of high-k films with capacitance density of about 1 μF/cm 2 on organic substrates. This is done by reactively growing a high-k film from Ti foil/Ti-coated copper foil/Ti precursor-coated organic substrate in an alkaline barium ion bath. Alternatives may be used to address multiple coatings, low temperature baking, low temperature pyrolysis with oxygen plasma, etc. Sol-gel and RF-sputtering assisted by a reaction with the intermediate layer and a foil transfer process may be used to integrate perovskite thin films with a capacitance in the range of 1-5 μF/cm 2 . Thermal oxidation of titanium foil/Ti-coated copper foil/Ti-coated organic substrate with a copper conductive layer is also a reactively grown high-k film process for integrating capacitance of hundreds of nF with or without using a foil transfer process.