CAS: 15573-38-3; Tris(Trimethylsilyl)Phosphine

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chloro-trimethyl-silane bis(trimethylsilyl)phosphine lithium bis(trimethylsilyl)phosphide trans-dichlorobis(triphenylphosphine)platinum(II)(Bis-phenoxycarbonylmethyl-phosphanyl)-acetic acid phenyl ester (Bis-p-tolyloxycarbonylmethyl-phosphanyl)-acetic acid p-tolyl ester 2-(2,4,6-tri-tert-butylphenyl)phosphaacetylene 2,5-Diphenyl-4-trimethylsilanyloxy-[1,3]thiaphosphole

📜三甲基氯硅烷置于磷化氢,Nak Alloy体系中,用 乙二醇二甲醚 用作溶剂,化学反应生成氘代3-氨基-5-吗啉-4-甲基-恶唑-2-啉酮
参考文献:新型四甲基phosph二氯二甲基铝酸酯的合成及x射线晶体结构
标题:新型四甲基phosph二氯二甲基铝酸酯的合成及x射线晶体结构
摘要:三(三甲基甲硅烷基)膦与二甲基氯化铝在1,2-二甲氧基乙烷(一甘醇二甲醚)中的反应显示出重要的结构作用,导致新型四甲基phospho二氯二甲基铝酸盐和已知的二聚化合物(bis(2,2-甲氧基-乙醇基-O,O')-四甲基-二铝).新形成的四甲基phospho二氯二甲基铝酸盐[(ch 3)4 P] + [(ch 3)2 Alcl 2 ]-在单斜空间群p2 1中结晶./ C,具有晶格常数a = 7.522,B = 11.644,C = 14.841å和β= 99.32°的晶胞包括四个公式单位.键长的平均值为pc 1.787å,Al-Cl 2.224å和al-C 1.966å.磷和铝都被有机he基阳离子和有机铝基阴离子四面体包围.二氯二甲基铝酸酯阴离子的几何形状显示变形的四面体.
Doi:10.1080/24701556.2020.1729192

专利信息

专利号:WO-2025015696-A1
优先权日:2023-07-17
标题:β-CYC-ASSISTED SYNTHESIS OF IN-V GROUP QUANTUM DOT, AND SYNTHESIS METHOD THEREFOR AND USE THEREOF
发明人：LI GUOQIANG; LIANG JIEHUI; WANG JUNKUN; GUO JIANSEN; LIU PEIXIN
权利人:UNIV SOUTH CHINA TECH
摘要:Provided are β-cyc-assisted synthesis of an In-V group quantum dot, and a synthesis method therefor and the use thereof. The method for β-cyc-assisted synthesis of an In-V group quantum dot comprises: preparing a β-cyc-containing precursor solution of an In source and a V group element source, and subjecting it to a hydrothermal reaction; extracting a stock solution after the hydrothermal reaction by using an organic solvent; removing β-cyc from the stock solution, washing same with water and then extracting same; and heating and concentrating same to obtain a high-concentration In-V group quantum dot solution. With regard to the β-cyc-assisted synthesis of an In-V group quantum dot, the In-V group quantum dot synthesized with the assistance of β-cyc is prepared by using the method for β-cyc-assisted synthesis of an In-V group quantum dot. The use of β-cyc-assisted synthesis of an In-V group quantum dot is the use of the β-cyc-assisted synthesis of an In-V group quantum dot in the field of photovoltaics, and the field of photovoltaics comprises solar cells, photoelectrochemical hydrogen production and photoelectric detectors. Compared with traditional synthesis methods, this synthesis method has the advantages of green and environmentally friendly raw materials, a simple and safe process, a simple and convenient device, efficient and economic synthesis, and being low cost.

专利号:US-7615169-B2
优先权日:2004-09-20
标题 :Method for synthesis of colloidal nanoparticles
发明人：STROUSE GEOFFREY FIELDING; GERBEC JEFFREY A; MAGANA DONNY
权利人:UNIV CALIFORNIA
摘要:A method for synthesis of high quality colloidal nanoparticles using comprises a high heating rate process. Irradiation of single mode, high power, microwave is a particularly well suited technique to realize high quality semiconductor nanoparticles. The use of microwave radiation effectively automates the synthesis, and more importantly, permits the use of a continuous flow microwave reactor for commercial preparation of the high quality colloidal nanoparticles.

专利号:US-7927516-B2
优先权日:2004-09-20
标题 :Method for synthesis of colloidal nanoparticles
发明人：STROUSE GEOFFREY F; GERBEC JEFFREY A; MAGANA DONNY
权利人:UNIV CALIFORNIA
摘要:A method for synthesis of high quality colloidal nanoparticles using comprises a high heating rate process. Irradiation of single mode, high power, microwave is a particularly well suited technique to realize high quality semiconductor nanoparticles. The use of microwave radiation effectively automates the synthesis, and more importantly, permits the use of a continuous flow microwave reactor for commercial preparation of the high quality colloidal nanoparticles.

专利号:US-2024001326-A1
优先权日:2022-06-29
标题:Aparatus and method for accelerated multi-stage synthesis of quantum dots
发明人：KIM TAEKHOON; ABOLHASANI MILAD; YANG HYEYEON; JUN SHIN AE; EPPS ROBERT W
权利人:SAMSUNG ELECTRONICS CO LTD; UNIV NORTH CAROLINA STATE
摘要:An apparatus for accelerated multi-stage synthesis of quantum dots (QDs) includes an injector which injects a material for producing QDs, a first reactor connected to the injector and including at least one selected from a coil reactor and a plate reactor, a second reactor connected to the first reactor and including at least one selected from the coil reactor and the plate reactor, and a first junction connected between the first reactor and the second reactor and provided with an inlet for injecting the material for producing the QDs.

专利号:US-2025197431-A1
优先权日:2023-12-15
标 题:Methods and systems for forming a layer comprising silicon and composition and synthesis of silicon precursor
发明人：ROMERO PATRICIO EDUARDO; VERVUURT RENÉ HENRICUS JOZEF; DEZELAH CHARLES; PORE VILJAMI J
权利人:ASM IP HOLDING BV
摘要:Disclosed are methods and systems for forming a silicon-containing layer on a substrate. Further disclosed are composition and synthesis of silicon-containing precursor. The methods for forming a silicon-containing layer comprise executing a plurality of deposition cycles. A deposition cycle comprises a first precursor pulse that comprises exposing the substrate to a first precursor. The first precursor comprises a molecule comprising a P—Si bond. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.

专利号:WO-2025017286-A1
优先权日:2023-07-14
标 题 :Novel synthesis of colloidal quantum dot ink and applications in semiconductor devices
发明人：VASHISHTHA PARTH; HE XIN; MEHTA JOSHUA; LIU JUNPENG; VO CONG-DUAN
权利人:QUANTUM SCIENCE LTD
摘要:The present invention provides a method for producing a nanocrystal composition comprising an inorganic ligand via a one-pot synthesis. The present invention also provides nanocrystals comprising novel inorganic ligands and the use of these nanocrystals. The present invention further provides the use of the novel inorganic ligands in the preparation of nanocrystals.