CAS: 82072-23-9; 3-(Bromomethyl)Benzaldehyde

上下游产品

CAS号28188-41-2 3-氰基溴苄 | CAS号7647-01-0 盐酸 | CAS号52010-98-7 3-(羟甲基)苯甲醛 | CAS号82072-22-8 3-溴甲基苯甲醇 | CAS号626-19-7 间苯二甲醛 | CAS号1191-15-7 二异丁基氢化铝 | CAS号620-23-5 间甲基苯甲醛 | CAS号884507-42-0 3-(吡咯烷-1-甲基)苯甲醛 | CAS号78425-11-3 3-(1H-吡唑-1-甲基)苯甲醛 | CAS号80708-77-6 3-[(二甲氨基)甲基]苯甲醛 | CAS号849016-06-4 Dimethyl (3-for...

📜3-溴 甲基苄基 醇置于manganese(Iv) Oxide体系中,用 二氯甲烷 作为反应溶剂,化学反应 20.0H,以80%的收率获得产物3-(溴甲基)苯甲醛
参考文献:Galantamine-Curcumin Hybrids As Dual-Site Binding Acetylcholinesterase Inhibitors
标题:Galantamine-Curcumin Hybrids As Dual-Site Binding Acetylcholinesterase Inhibitors
摘要:盖兰他敏(gal)和姜黄素(cu)是用来改善像阿尔茨海默病(ad)这样的神经退行性疾病症状的生物碱.gal主要作为乙酰胆碱酯酶(ache)的抑制剂.cu结合到淀粉样蛋白β(aβ)寡聚体并抑制aβ斑块的形成.在这里,我们将gal的核心与cu的片段结合,设计了一个gal-Cu杂交物的组合库,作为双位结合ache抑制剂.设计的杂交物被筛选出具有最佳的adme性能和血脑屏障透过性,并在ache上进行对接.表现最佳的14种化合物被合成并在体外进行神经毒性和抗ache活性测试.其中五种化合物比gal和cu更少毒,并且显示出比gal高41到186倍的活性.
DOI:10.3390/molecules25153341

专利信息

专利号:WO-9618592-A1
优先权日:1994-12-10
标 题:Resin-bound phosphonium salts and their use in organic synthesis
发明人：HUGHES IAN
权利人:SMITHKLINE BEECHAM PLC; HUGHES IAN
摘要:The invention relates to carrying out organic chemistry on a solid support, and in particular to the use of a phosphonium salt as a linker for solid phase synthesis.

专利号:US-2024335442-A1
优先权日:2021-08-02
标 题:N-acylhydrazone compounds capable of inhibiting nav1.7 and/or nav1.8, processes for the preparation thereof, compositions, uses, methods for treatment using same, and kits
发明人：BARREIRO GABRIELA; SANT'ANA DANILO PEREIRA DE; GAMBA LUIS EDUARDO REINA; FRAGA CARLOS ALBERTO MANSSOUR; BARREIRO ELIEZER JESUS DE LACERDA; LIMA LÃ?DIA MOREIRA
权利人:EUROFARMA LABORATORIOS S A; UNIV FEDERAL DO RIO DE JANEIRO UFRJ
摘要:N-acylhydrazone compounds that are Nav 1.7 and/or Nav 1.8 inhibitors, including N-acylhydrazone compounds of Formula (I), wherein the substituents R1 to R6 are independently selected from the groups defined in the specification, as well as to the processes for the preparation thereof, compositions comprising at least one of said compounds, uses, treatment methods for treating or preventing pain-related pathologies, and kits, and which are applicable in the fields of medicinal chemistry and organic synthesis, as well as in the treatment of pain-related disorders.

专利号:US-7518905-B2
优先权日:1999-07-01
标 题 :High density memory device
发明人：BOCIAN DAVID F; KUHR WERNER G; LINDSEY JONATHAN; CLAUSEN PETER CHRISTIAN; GRYKO DANIEL TOMASZ
权利人:UNIV CALIFORNIA; UNIV NORTH CAROLINA STATE
摘要:This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10 15 bits/cm 3 ), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.

专利号:US-6208553-B1
优先权日:1999-07-01
标 题 :High density non-volatile memory device incorporating thiol-derivatized porphyrins
发明人：GRYKO DANIEL TOMASZ; CLAUSEN PETER CHRISTIAN; ROTH KRISTIAN M; BOCIAN DAVID F; KUHR WERNER G; LINDSEY JONATHAN S
权利人:UNIV CALIFORNIA
摘要:This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10 15 bits/cm 3 ), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium comprising one or more thiol-derivatized porphyrins. The storage medium has a multiplicity of different and distinguishable oxidation states and data is stored in said oxidation states by the addition or withdrawal of one or more electrons from the storage medium via the electrically coupled electrode(s).

专利号:US-7061791-B2
优先权日:1999-07-01
标 题 :High density molecular memory device
发明人：BOCIAN DAVID F; KUHR WERNER G; LINDSEY JONATHAN
权利人:UNIV CALIFORNIA
摘要:This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10 15 bits/cm 3 ), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.

专利号:CN-117447298-A
优先权日:2023-08-29
标题 :A kind of synthesis method of halomethyldifluoromethylbenzene