CAS: 992-91-6; Germanium(Iv) Methoxide

📜甲醇,锗烷置于sodium Acetate体系中,化学反应 5.0H,以95%的收率获得产物甲氧基锗
参考文献:Direct Electrochemical Synthesis Of Germanium Alkoxides
标题:Direct Electrochemical Synthesis Of Germanium Alkoxides
摘要:在无分隔电池中,以微量naoac作为电解质,锗在醇中的阳极恒电位溶解可反应生成锗烷氧化物,电流效率为88-95%.
DOI:10.1007/s11172-015-0887-5

专利信息

专利号:US-2007074541-A1
优先权日:2003-10-10
标 题:Synthesis of germanium sulphide and related compounds
发明人：BADDING JOHN V; HEWAK DANIEL W; HUANG CHUNG-CHE
权利人:UNIV SOUTHAMPTON
摘要:The invention relates to synthesis of germanium sulphide glasses and optical devices formed therefrom. In a chemical vapour deposition process, germanium tetrachloride is reacted with hydrogen sulphide at temperatures in the range 450-700° C. to form germanium sulphide. Lower temperatures within this range of 450-550° C. directly produce a glass, whereas higher temperatures within the range of 600-700° C. produce a crystalline powder which can then be reduced to a glass by subsequent melting and annealing. The reaction is preferably carried out at atmospheric pressure or slightly higher. Thin films and bulk glasses suitable for optical waveguides can be formed directly in one processing step as can powders and microspheres. The materials synthesised are of a high purity with low oxide impurities and only trace levels of transition metal ions.

专利号:US-8507040-B2
优先权日:2008-05-08
标题:Binary and ternary metal chalcogenide materials and method of making and using same
发明人：XIAO MANCHAO; LEI XINJIAN; YANG LIU
权利人:XIAO MANCHAO; LEI XINJIAN; YANG LIU; AIR PROD & CHEM
摘要:This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

专利号:US-8765223-B2
优先权日:2008-05-08
标题 :Binary and ternary metal chalcogenide materials and method of making and using same
发明人：XIAO MANCHAO; YANG LIU
权利人:XIAO MANCHAO; YANG LIU; AIR PROD & CHEM
摘要:This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

专利号:US-9896776-B2
优先权日:2011-09-21
标 题 :Chemical and electrochemical synthesis and deposition of chalcogenides from room temperature ionic liquids
发明人：STEVENSON KEITH J; MURUGESAN SANKARAN; KEARNS PATRICK; AKKINENI ARUNKUMAR
权利人:UNIV TEXAS
摘要:Room temperature electrochemical methods to deposit thin films of chalcogenide glasses.

专利号:US-8940855-B2
优先权日:2009-06-02
标题:Polymers bearing pendant pentafluorophenyl ester groups, and methods of synthesis and functionalization thereof
发明人：HEDRICK JAMES L; NELSON ALSHAKIM; SANDERS DANIEL P
权利人:IBM
摘要:A one pot method of preparing cyclic carbonyl compounds comprising an active pendant pentafluorophenyl ester group is disclosed. The cyclic carbonyl compounds can be polymerized by ring opening methods to form ROP polymers comprising repeat units comprising a side chain pentafluorophenyl ester group. Using a suitable nucleophile, the pendant pentafluorophenyl ester group can be selectively transformed into a variety of other functional groups before or after the ring opening polymerization.

专利号:US-6713416-B2
优先权日:1999-07-30
标题:Molecularly-imprinted material made by template-directed synthesis
发明人：MARKOWITZ MICHAEL A; SCHOEN PAUL E; GABER BRUCE P; RATNA BANAHALLI R; KUST PAUL R; TURNER DAVID C; CLARK DOUGLAS S; DORDICK JONATHAN S
权利人:US NAVY
摘要:A method of making a molecularly imprinted porous structure makes use of a surfactant analog of the molecule to be imprinted that has the imprint molecule portion serving as the surfactant headgroup. The surfactant analog is allowed to self-assemble in a mixture to create at least one supramolecular structure having exposed imprint groups. The imprinted porous structure is formed by adding reactive monomers to the mixture and allowing the monomers to polymerize, with the supramolecular structure serving as a template. The resulting solid structure has a shape that is complementary to the shape of the supramolecular structure and has cavities that are the mirror image of the imprint group. Similarly, molecularly imprinted particles may be made by using the surfactant to create a water-in-oil microemulsion wherein the imprint groups are exposed to the water phase. When reactive monomers are allowed to polymerize in the water phase to form particles, the surface of the particles have cavities that are the mirror image of the imprint group.