CAS: 7783-82-6; Hexafluorotungsten

上下游产品

CAS号7782-41-4 氟 | CAS号7440-33-7 钨粉 | CAS号7783-70-2 五氟化锑 | CAS号13283-01-7 六氯化钨 | CAS号7664-39-3 氟化氢 | CAS号16921-96-3 heptafluoro-λ7-... | CAS号79028-46-9 | CAS号13766-47-7 tetrafluorotungsten | CAS号13773-81-4 Krypton(II) dif... | CAS号13520-79-1 TUNGSTEN OXYTET... | CAS号593-53-3 氟甲烷 | CAS号7637-07-2 三氟化硼 | CAS号22441-22-1 tungsten(VI) pe... | CAS号11128-24-8 fluorosilicon | CAS号13966-66-0 difluorosilylene | CAS号14835-14-4 trifluorosilicon | CAS号7783-61-1 四氟化硅 | CAS号7440-33-7 钨粉 | CAS号114156-00-2 (diphenyl-λ4-su... | CAS号420-56-4 三甲基氟硅烷

三氧化钨 反应生成 六氟化钨
参考文献:Xarada,Isao;Joda,Yukixiro;Ivanaga,Tokuyuki
标题:Xarada,Isao;Joda,Yukixiro;Ivanaga,Tokuyuki

专利信息

专利号:US-5997949-A
优先权日:1995-09-22
标题 :Synthesis of W-Si-N films by chemical vapor deposition using WF6, SiH4 and NH3
发明人：NICOLET MARC-A; MADAR ROLAND; BERNARD CLAUDE; FLEMING JAMES G; ROHERTY-OSMUN ELIZABETH LYNN; SMITH PAUL M; CUSTER JONATHAN S; JONES RONALD V
权利人:CALIFORNIA INST OF TECHN; SANDIA CORP
摘要:The present invention relates to the forming of amorphous or near-amorphous, ternary films of W-Si-N on substrates by chemical vapor deposition of WF 6 , SiH 4 and NH 3 and a carrier gas. The present invention method will allow the conformal forming of amorphous or near-amorphous, ternary films of W-Si-N on patterned non-planar substrates at temperatures at or below about 450° C., by chemical vapor deposition of WF 6 , SiH 4 and NH 3 and a carrier gas. A typical temperature range for the formation of the films is between 473° K. and 773° K., while the reactor pressure can be varied between 0.1 to 50 Torr. The composition of the deposited films is adjusted by varying the flow ratios of the reactive gases.

专利号:US-4870217-A
优先权日:1988-10-24
标 题:Method for production of phenol/acetone from cumene hydroperoxide
发明人：KNIFTON JOHN F
权利人:TEXACO CHEMICAL
摘要:A method is disclosed for the synthesis of phenol and acetone by acid-catalyzed decomposition over a catalyst comprising an acidic smectite clay, particularly an acidic montmorillonite silica-alumina clay. The method allows for quantitative conversions with yields of up to 98% mole or better. Further the method is capable of operating efficiently at high LHSVs.

专利号:US-4898995-A
优先权日:1988-10-24
标 题 :Method for production of phenol/acetone from cumene hydroperoxide
发明人：KNIFTON JOHN F; SANDERSON JOHN R
权利人:TEXACO CHEMICAL
摘要:A method is disclosed for the synthesis of phenol and acetone by decomposition over a heterogeneous catalyst from the group consisting of a heteropoly acid on an inert support or an ion exchange resin with a sulfonic acid functionality. The method allows for quantitative conversions with yields of up to >99 mole % or better.

专利号:US-4876397-A
优先权日:1988-10-24
标题 :Method for production of phenol/acetone from cumene hydroperoxide
发明人：KNIFTON JOHN F; GRICE NEAL J
权利人:TEXACO CHEMICAL
摘要:A method is disclosed for the synthesis of phenol and acetone by decomposition over a heterogeneous catalyst comprising a fluorine-containing acidic compound on an inert support. The method allows for quantitative conversions with yields of up to >99 mole %.

专利号:US-5348723-A
优先权日:1990-02-07
标 题 :Synthesis of semiconductor grade tungsten hexafluoride
发明人：SABACKY BRUCE J; DOANE ROBERT E
权利人:BANDGAP TECH CORP
摘要:Semiconductor grade tungsten hexafluoride (WF6) is produced by reacting tungsten metal with a recirculating flow of gaseous WF6 containing a small concentration of fluorine in a heated reactor. The high purity WF6 produced is useful for deposition of tungsten metallization in fabricating VLSI integrated circuitry.

专利号:US-8900467-B1
优先权日:2013-05-25
标 题 :Method for making a chemical contrast pattern using block copolymers and sequential infiltration synthesis
发明人：CHAPUIS YVES-ANDRE; RUIZ RICARDO; WAN LEI
权利人:HGST Netherlands BV
摘要:A method for making a chemical contrast pattern uses directed self-assembly of block copolymers (BCPs) and sequential infiltration synthesis (SIS) of an inorganic material. For an example with poly(styrene-block-methyl methacrylate) (PS-b-PMMA) as the BCP and alumina as the inorganic material, the PS and PMMA self-assemble on a suitable substrate. The PMMA is removed and the PS is oxidized. A surface modification polymer (SMP) is deposited on the oxidized PS and the exposed substrate and the SMP not bound to the substrate is removed. The structure is placed in an atomic layer deposition chamber. Alumina precursors reactive with the oxidized PS are introduced and infuse by SIS into the oxidized PS, thereby forming on the substrate a chemical contrast pattern of SMP and alumina. The resulting chemical contrast pattern can be used for lithographic masks, for example to etch the underlying substrate to make an imprint template.