CAS: 12025-39-7; Germanium Telluride

该化合物是一种由和组成的二元化合物,其半导体特性显著,通常表现为灰状或黑晶状固体,并展示出钻石立体晶体结构.Gete的特点是高热稳定性和相对低的熔点,适合电子和热电装置的各种应用.材料有直接带宽,能够有效地吸收和释放光,使其在光学应用中有用.此外,GeTe经历了从晶体向无形态状态的阶段变化,在数据储存技术中加以利用.其热电效率由于在保持低热导的同时允许电导,使其成为能源转换应用的候选条件而得到加强.GeTe还研究其在地表学导体和其他先进材料研究中的潜力.然而,由于的毒性,必须采取防范措施.

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    专利信息


    专利号:CN-102076882-A
    优先权日:2008-04-25
    标题 :Synthesis and application of precursors for ALD of tellurium and selenium thin films

    专利号:CN-102076882-B
    优先权日:2008-04-25
    标 题 :Synthesis and application of precursors for ALD of tellurium and selenium thin films

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