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[Hg(2-pyridyltellurolate)2] mercury(II) selenide tellurium(IV) oxide tellurium 专利信息
专利号:US-11999888-B2
优先权日:2021-11-10
标 题 :Method for in-situ modification of mercury quantum dots in traditional thermal injection process
发明人:LIU JINGJING; WANG JIANLU; GUO TIANLE; HUANG XINNING; MENG XIANGJIAN; SHEN HONG; LIN TIE; CHU JUNHAO
权利人:SHANGHAI INST TECH PHYSICS CAS
摘要:The present disclosure relates to the field of preparation of compound semiconductor nanomaterials, and in particular to a method for in-situ modification of mercury quantum dots in a traditional thermal injection process. It is characterized in that, in the traditional thermal injection process for synthesis of HgTe quantum dots, after a certain reaction time, a low boiling point polar solvent that is incompatible with a reaction solvent is rapidly injected, so that an interfacial separation of two liquid phases occurs in a mixed reaction, and then a selective crystal oriented surface modification is conducted on surfaces of mercury quantum dots.
专利号:US-7153703-B2
优先权日:2001-05-14
标 题 :Synthesis of stable colloidal nanocrystals using organic dendrons
发明人:PENG XIAOGANG; CHEN HAIYAN
权利人:UNIV ARKANSAS
摘要:A method for stabilizing colloidal suspensions of nanocrystals or nanoparticles in a solvent or solid matrix is provided by coating the nanocrystals with bulky organic molecules, specifically dendrons. By coating nanocrystals with a dense organic dendron coat and further cross-linking the dendron ligands, oxidation of the nanocrystals and dissociation of the ligands are avoided. This invention allows nanocrystals to undergo rigorous purification and processing. It may regularly be applied to a variety of nanocrystals.
专利号:US-2017271563-A1
优先权日:2016-03-15
标题 :Method and apparatus for controlled semiconductor growth during synthesis of quantum dot materials
发明人:Durgan Chris; BERTRAM MATTHEW; CARILLO MATTHEW J; ARCHER PAUL
权利人:Durgan Chris; BERTRAM MATTHEW; CARILLO MATTHEW J; ARCHER PAUL
摘要:Techniques and mechanisms for synthesizing quantum dot structures. In an embodiment, a first reaction is performed to dissolve a precursor of a semiconductor material, wherein water is created as a by-product of the first reaction. Some or all of the water is removed and another chemical compound is added, wherein the chemical compound is a primary alcohol or a 1,2-diol. After the addition of the chemical compound, a second reaction is performed to grow at least some nanocrystalline portion of the quantum dot. In another embodiment, the chemical compound is 1,2-hexanediol, 1,2-dodecanediol or 1-octadecanol.
专利号:US-5035874-A
优先权日:1987-06-26
标 题:Diallyl telluride and synthesis of diorgano tellurides
发明人:HIGA KELVIN T; HARRIS DANIEL C
权利人:UNITED STAES OF AMERICA AS REP
摘要:The new compound diallyl telluride and other diorgano telluride compounds are prepared from alkali metal tellurides obtained by an efficient reaction between an alkali metal and tellurium in a naphthalene/tetrahydrofuran solution. The alkali metal telluride then reacts with an organo halide to form the final product which is easily isolated by filtration followed by vacuum distillation.
专利号:US-2004101976-A1
优先权日:2001-05-14
标 题 :Synthesis of stable colloidal nanocrystals using organic dendrons
专利号:EP-1402089-A2
优先权日:2001-05-14
标 题 :Synthesis of stable colloidal nanocrystals using organic dendrons