CAS: 12065-36-0; Germanium(Iii) Nitride

该化合物是一种由和氮组成的二进制化合物,其特点是半导体特性以及电子和光电子学的潜在应用,其典型特征是深褐色或黑粉,具有高热稳定性,适合高温应用;硝酸铵因其宽带宽而闻名,使其能够在各种电子设备中有效发挥作用;该化合物的硬性和机械强度也值得注意,它对于保护性涂层具有优势;此外,硝酸铵可以通过各种方法合成,包括化学蒸汽沉积和固态反应;它与湿度和空气的抗反应需要谨慎处理和储存,以防止降解;

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欧盟法规

C&L通报REACH预注册

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    专利信息


    专利号:US-7713352-B2
    优先权日:2001-06-29
    标题 :Synthesis of fibers of inorganic materials using low-melting metals
    发明人:SUNKARA MAHENDRA KUMAR; SHARMA SHASHANK; CHANDRASEKARAN HARI; LI HONGWEI; VADDIRAJU SREERAM
    权利人:UNIV LOUISVILLE RES FOUND
    摘要:A process is provided to produce bulk quantities of nanowires in a variety of semiconductor materials. Thin films and droplets of low-melting metals such as gallium, indium, bismuth, and aluminum are used to dissolve and to produce nanowires. The dissolution of solutes can be achieved by using a solid source of solute and low-melting metal, or using a vapor phase source of solute and low-melting metal. The resulting nanowires range in size from 1 nanometer up to 1 micron in diameter and lengths ranging from 1 nanometer to several hundred nanometers or microns. This process does not require the use of metals such as gold and iron in the form of clusters whose size determines the resulting nanowire size. In addition, the process allows for a lower growth temperature, better control over size and size distribution, and better control over the composition and purity of the nanowire produced therefrom.

    专利号:US-8062756-B2
    优先权日:2005-08-26
    标题:Stepwise growth of oligomeric redox-active molecules on a surface without the use of protecting groups
    发明人:BOCIAN DAVID F; LINDSEY JONATHAN S; JIAO JIEYING
    权利人:BOCIAN DAVID F; LINDSEY JONATHAN S; JIAO JIEYING; REGENTS OFT THE UNIVERSITY OF CALIFORNIA; UNIV NORTH CAROLINA STATE
    摘要:This invention provides a procedure for growing oligomers via a stepwise process. The oligomers can include porphyrins, which have been previously shown to be attractive candidates for molecular-based information storage. The stepwise synthesis procedure requires no protecting groups, thus eliminating protection/deprotection reactions that add complexity to the process.

    专利号:US-2007095276-A1
    优先权日:2001-06-29
    标 题 :Synthesis of fibers of inorganic materials using low-melting metals

    专利号:WO-9718162-A1
    优先权日:1995-11-14
    标 题:Synthesis of 312 phases and composites thereof

    专利号:US-2025042877-A1
    优先权日:2021-11-30
    标题:Organic compound, organic device, light-emitting apparatus, and electronic appliance
    发明人:HAYASHI YUKI; KAWAKAMI SACHIKO; HASHIMOTO NAOAKI
    权利人:SEMICONDUCTOR ENERGY LAB
    摘要:A novel compound, a synthesis method thereof, and an organic device including the novel compound are provided. A compound represented by General Formula (G1) is provided. In General Formula (G1), each of R1, R2, and R5 to R7 independently represents any of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 1 to 60 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 60 carbon atoms. R3 represents a condensed ring composed of 4 to 10 rings containing nitrogen as an element forming the ring, and R4 represents any of a substituted or unsubstituted condensed ring having 1 to 60 carbon atoms, a substituted or unsubstituted aryl group with a molecular weight of 78 or more, and a substituted or unsubstituted heteroaryl group with a molecular weight of 80 or more. At least one of A1 to A3 represents nitrogen, and each of the others represents substituted carbon. Each of substituents of A1 to A3 independently represents any of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 1 to 60 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 60 carbon atoms.

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    合成参考文献


    参考文献:10.1007/978-3-662-21788-7_3
    参考文献:10.3103/s1068335623150046
    摘要:Bronnikov KA, Gladkikh SA, Okotrub KA, Korolkov VP, Kuchmizhak AA, Dostovalov AV. Formation of Laser-Induced Periodic Structures on Thin Films of Transition Metal and Semiconductor Nitrides. Bull. Lebedev Phys. Inst. 2023 Sep;50(S3):S329–35. doi: 10.3103/s1068335623150046.
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