CAS: 37185-09-4; Strontium,Barium(2+),Oxido(Dioxo)Niobium

专利信息

专利号:US-12147747-B1
优先权日:2021-07-23
标 题 :Area oriented logic synthesis
发明人：ODINAKA IKENNA; MANIPATRUNI SASIKANTH; DOSHI DARSHAK; DOKANIA RAJEEV KUMAR; MATHURIYA AMRITA
权利人:KEPLER COMPUTING INC
摘要:A computer-aided design (CAD) tool is provided for logic optimization and synthesis. The CAD tool executes a process that involves optimizing power, performance, and area (PPA) of a logic circuit by minimizing a number of CMOS gates, and majority and/or minority gates in the circuit and its depth. The CAD tool implements a methodology of optimizing logic synthesis based on a mix of standard cell libraries (such as AND, OR, NAND, NOR, XOR, Multiplexer, full adder, half adder, etc.) and varying input majority and minority gates (where the number of inputs in the minority and majority gates could vary as odd numbers from 3 and above). The standard cell libraries cells may contain minority and/or majority gates.

专利号:US-10663922-B2
优先权日:2016-04-14
标题:Image display system and image display method
发明人：ZHANG YUXIN
权利人:BOE TECHNOLOGY GROUP CO LTD
摘要:An image display system is provided. The image display system includes: at least one holographic image acquiring device each configured to obtain holographic image information of a scene; an image synthesis device configured to generate holographic image synthesis information based on at least a part of the holographic image information obtained by the at least one holographic image acquiring device; and an image reconstruction device configured to reconstruct a holographic synthetic image in accordance with the holographic image synthesis information. The image display system can synthesize holographic image information to combine several holographic three-dimensional display scenes into one holographic three-dimensional scene, so that the user can perceive display effects almost the same as the real scenes, improving user experience. An image display method is also provided.

专利号:US-6316651-B1
优先权日:1999-05-07
标 题 :Environmentally benign Group II and Group IV or V spin-on precursor materials
发明人：DOUGHERTY T KIRK; DRAB JOHN J
权利人:RAYTHEON CO
摘要:The present invention is directed to the synthesis, processing and test of improved spin-on precursor materials comprising at least one Group II metal and at least one Group IV or Group V metal, useful for making thin oxide films, useful, for example, in various electronic devices, such as ferroelectric devices. For example, barium strontium titanate spin-on precursor materials are useful for making thin films of barium strontium titanate (BST) for, e.g., ferroelectric capacitors. A method is provided for fabricating electronic devices employing such Group II-Group IV (or V) oxides as the active device, using polyether acids. The method comprises: (a) providing a substrate; (b) forming a bottom electrode on the substrate; (c) depositing a solution comprising polyether acid salts of the Group II and Group IV or Group V metal ions; (d) forming the oxide film from the solution; and (e) forming a top electrode on the oxide film. As a consequence of the method, improved electronic devices are formed from less toxic and easier handled precursors and solvents. The present invention provides for a soluble spin-on precursor which is compatible and soluble in non-toxic and environmentally benign solvents. In addition, this spin-on precursor material has been shown to give much improved electrical performance properties of the BST thin films produced.