CAS: 25152-52-7; Aluminum Antimonide

上下游产品

antimony aluminium aluminium(III) iodide triisobutylstibine

专利信息

专利号:US-11964879-B2
优先权日:2016-12-30
标 题 :Template-assisted synthesis of 2D nanosheets using nanoparticle templates
发明人：DANIELS STEVEN; PICKETT NIGEL L
权利人:NANOCO TECHNOLOGIES LTD; NANOCO 2D MAT LIMITED
摘要:A template-assisted method for the synthesis of 2D nanosheets comprises growing a 2D material on the surface of a nanoparticle substrate that acts as a template for nanosheet growth. The 2D nanosheets may then be released from the template surface, e.g. via chemical intercalation and exfoliation, purified, and the templates may be reused.

专利号:WO-2024061900-A1
优先权日:2022-09-20
标题 :Quantum dot shell synthesis
发明人：WALRAVENS WILLEM; NAKONECHNYI IGOR; MACINTYRE BROWN ALASDAIR ANGUS; PRATO MODESTINO RAFAEL ALBERTO; GRIGEL VALERIIA
权利人:QUSTOMDOT BV
摘要:The invention relates to the synthesis of core/shell/shell quantum dots, particularly to a novel shell synthesis method.

专利号:US-2014262753-A1
优先权日:2013-03-15
标 题:Separation of function-based thin-film deposition systems and method for synthesis of complex materials
发明人：BARBEE JR TROY W
权利人:BARBEE JR TROY W
摘要:A thin-film deposition system and method based on separating the function of multiple material sources by locating the sources in separate chambers partitioned by a partition wall, and providing a substrate conveyer, such as a rotating platform, to cyclically convey a substrate between the partitioned chambers so that the materials from the separated sources are serially introduced to the substrate per cycle in isolation of each other for layer-by-layer deposition and/or reaction on the substrate.

专利号:US-7932311-B2
优先权日:2005-12-23
标题 :Synthesis of particles in dendritic structures
发明人：AYMONIER CYRIL; CANSELL FRANCOIS; MECKING STEFAN; MOISAN SANDY; MARTINEZ VICTOR
权利人:CENTRE NAT RECH SCIENT
摘要:The invention relates to a method of preparing a particle-based composition, comprising: (i) bringing into contact a mixture comprising a dendritic structure and a metal compound precursor in a fluid, under temperature and pressure conditions such that the mixture is not soluble in the fluid; and (ii) chemically converting the metal compound precursor.

专利号:US-2017271563-A1
优先权日:2016-03-15
标题 :Method and apparatus for controlled semiconductor growth during synthesis of quantum dot materials
发明人：Durgan Chris; BERTRAM MATTHEW; CARILLO MATTHEW J; ARCHER PAUL
权利人:Durgan Chris; BERTRAM MATTHEW; CARILLO MATTHEW J; ARCHER PAUL
摘要:Techniques and mechanisms for synthesizing quantum dot structures. In an embodiment, a first reaction is performed to dissolve a precursor of a semiconductor material, wherein water is created as a by-product of the first reaction. Some or all of the water is removed and another chemical compound is added, wherein the chemical compound is a primary alcohol or a 1,2-diol. After the addition of the chemical compound, a second reaction is performed to grow at least some nanocrystalline portion of the quantum dot. In another embodiment, the chemical compound is 1,2-hexanediol, 1,2-dodecanediol or 1-octadecanol.

专利号:US-2023028670-A1
优先权日:2021-07-16
标 题 :Method of manufacturing multi-component semiconductor nanocrystal, multi-component semiconductor nanocrystal, and quantum dot including the same
发明人：LEE BAEKHEE; LYU JAEJIN; LEE JUNWOO; LEE TAEKJOON
权利人:SAMSUNG DISPLAY CO LTD
摘要:Provided are a method of manufacturing a multi-component semiconductor nanocrystal, a multi-component semiconductor nanocrystal manufactured by the method, and a quantum dot including the same. The method includes irradiating microwaves to a semiconductor nanocrystal synthesis composition, and the semiconductor nanocrystal synthesis composition includes a precursor including a Group I element, a precursor including a Group II element, a precursor including a Group III element, a precursor including a Group V element, a precursor including a Group VI element, or any combination thereof.