📜硫酸 反应生成碲化银(I) 参考文献:Chen,T. T.;Dutrizac,J. E.,Precious Metals89,Warrendale (Pa),(1988(1989)) C. 377-390 标题:Chen,T. T.;Dutrizac,J. E.,Precious Metals89,Warrendale (Pa),(1988(1989)) C. 377-390
专利信息
专利号:US-10755939-B2 优先权日:2018-09-11 标 题 :Multilayer graphene using chemical vapor deposition and method of manufacturing same 发明人:CHO KILWON; YOO MIN SEOK; LEE HYO CHAN 权利人:CT ADVANCED SOFT ELECTRONICS; POSTECH ACADEMY-INDUSTRY FOUND 摘要:Disclosed is a method of manufacturing multilayer graphene, including (a) contacting of a metal substrate with a nonmetal element, (b) reduction through heat treatment, and (c) chemical vapor deposition of a graphene precursor on the metal substrate containing the nonmetal element dissolved therein, thereby manufacturing multilayer graphene that is doped with the nonmetal element on the metal substrate. In the multilayer graphene thus manufactured, the number of graphene layers and the work function are simultaneously adjusted by controlling the concentration of doped nonmetal element in a thickness direction of graphene through interactions related to the reduction of the nonmetal element dissolved in a copper catalyst and the growth of graphene, and moreover, the stacking structure of graphene is maintained and the optoelectronic properties of multilayer graphene can be controlled by simultaneously regulating graphene growth and doping during the synthesis procedure without additional processing.
专利号:CN-112960655-B 优先权日:2021-03-18 标题 :A method for controllable synthesis of near-infrared silver telluride quantum dots
专利号:CN-113443609-A 优先权日:2021-07-02 标 题 :Synthesis of new phase two-dimensional galena silver telluride based on two-dimensional tellurium template method and its preparation method and application
专利号:CN-113443609-B 优先权日:2021-07-02 标题 :Synthesis of new phase two-dimensional galena silver telluride based on two-dimensional tellurium template method and its preparation method and application
专利号:CN-111017885-A 优先权日:2019-11-18 标 题 :One-step synthesis of large aspect ratio silver telluride nanowires with controllable diameter
专利号:TW-201126013-A 优先权日:2009-10-26 标 题:Synthesis and use of precursors for ALD of Group VA element containing thin films
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