CAS: 10038-98-9; Germanium Tetrachloride

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CAS号7446-70-0 氯化铝 | CAS号7783-58-6 四氟化锗 | CAS号644-97-3 苯基二氯膦 | CAS号13450-92-5 溴化锗(IV) | CAS号7440-56-4 锗粉 | CAS号7782-50-5 氯气 | CAS号7786-30-3 氯化镁 | CAS号7705-08-0 三氯化铁 | CAS号56-23-5 四氯化碳 | CAS号10177-65-8 dibromo-bis(2,3... | CAS号105191-70-6 2,3,7,8-tetrame... | CAS号54062-91-8 tris(phosphanyl... | CAS号7803-51-2 磷化氢 | CAS号1452-12-6 Germane,tetraki... | CAS号143970-59-6 1,3-ditert-buty... | CAS号141376-82-1 bis[2,4,6-tri(p... | CAS号149540-54-5 T-BUTYLGERMANE | CAS号4593-81-1 二丁基氯化锗

锗烷置于氯体系中,用 Neat (No Solvent) 用作溶剂,化学反应生成四氯化锗
参考文献:Zur Chemie Von T-Butylgermanium-Halogeniden Und-Chalkogeniden
标题:Zur Chemie Von T-Butylgermanium-Halogeniden Und-Chalkogeniden
摘要:
Doi:10.1016/s0022-328X(00)84322-3

专利信息

专利号:US-7615169-B2
优先权日:2004-09-20
标题 :Method for synthesis of colloidal nanoparticles
发明人：STROUSE GEOFFREY FIELDING; GERBEC JEFFREY A; MAGANA DONNY
权利人:UNIV CALIFORNIA
摘要:A method for synthesis of high quality colloidal nanoparticles using comprises a high heating rate process. Irradiation of single mode, high power, microwave is a particularly well suited technique to realize high quality semiconductor nanoparticles. The use of microwave radiation effectively automates the synthesis, and more importantly, permits the use of a continuous flow microwave reactor for commercial preparation of the high quality colloidal nanoparticles.

专利号:US-7927516-B2
优先权日:2004-09-20
标题 :Method for synthesis of colloidal nanoparticles
发明人：STROUSE GEOFFREY F; GERBEC JEFFREY A; MAGANA DONNY
权利人:UNIV CALIFORNIA
摘要:A method for synthesis of high quality colloidal nanoparticles using comprises a high heating rate process. Irradiation of single mode, high power, microwave is a particularly well suited technique to realize high quality semiconductor nanoparticles. The use of microwave radiation effectively automates the synthesis, and more importantly, permits the use of a continuous flow microwave reactor for commercial preparation of the high quality colloidal nanoparticles.

专利号:US-10661239-B2
优先权日:2016-04-29
标 题 :Catalytic reactor configuration, preparation and method of direct synthesis of ethylene through oxygen-free catalysis of methane
发明人：BAO XINHE; GUO XIAOGUANG; FANG GUANGZONG; PAN XIULIAN; MENG JINGHENG; YU QINQIN; TAN DALI
权利人:DALIAN INST CHEM & PHYSICS CAS
摘要:A reactor configuration comprises an inlet section I, a preheating section II, a transition section III, a reaction section IV and an outlet section V; except for the preheating section II and the reaction section IV, the existence of the inlet section I, the transition section III and the outlet section V depends on reaction conditions; and the process realizes no coke deposition synthesis of methane and high selectivity synthesis of ethylene. The methane conversion rate is 20-90%; ethylene selectivity is 65-95%; propylene and butylene selectivity is 5-25%; aromatic hydrocarbon selectivity is 0-30%; and coke deposition is zero.

专利号:US-9051516-B2
优先权日:2011-11-16
标 题:Melt stabilization and vapor-phase synthesis of cesium germanium halides
发明人：BOWMAN STEVEN R; CONDON NICHOLAS J; O'CONNOR SHAWN P
权利人:US NAVY
摘要:The method described herein allows for melt stabilization and vapor-phase synthesis of a cesium germanium halide utilizing germanium dihalides formed in situ. This disclosure allows for the melting of cesium germanium halides without decomposition, which allows for growing crystals of these materials from the melt. This disclosure allows for a direct synthesis of these materials without the use of water or the introduction of other possible contaminants.

专利号:US-2007074541-A1
优先权日:2003-10-10
标 题:Synthesis of germanium sulphide and related compounds
发明人：BADDING JOHN V; HEWAK DANIEL W; HUANG CHUNG-CHE
权利人:UNIV SOUTHAMPTON
摘要:The invention relates to synthesis of germanium sulphide glasses and optical devices formed therefrom. In a chemical vapour deposition process, germanium tetrachloride is reacted with hydrogen sulphide at temperatures in the range 450-700° C. to form germanium sulphide. Lower temperatures within this range of 450-550° C. directly produce a glass, whereas higher temperatures within the range of 600-700° C. produce a crystalline powder which can then be reduced to a glass by subsequent melting and annealing. The reaction is preferably carried out at atmospheric pressure or slightly higher. Thin films and bulk glasses suitable for optical waveguides can be formed directly in one processing step as can powders and microspheres. The materials synthesised are of a high purity with low oxide impurities and only trace levels of transition metal ions.

专利号:US-11332368-B1
优先权日:2019-12-28
标 题:Methods for high-yield synthesis of higher germanes and higher silanes
发明人：HUANG BAOQUAN; LEE HENRY
权利人:GE SOLARTECH LLC
摘要:High-yield synthesis of higher germanes and higher silanes includes the hydrolysis of a germanium- or silicon-containing alloy with chemical formula AxByGe(Si), wherein A=Mg, Ca, Sr, Ba, Li, Na, K, Rb, Cs, and rare earth metals; B=Al, Si, Sn, Ga, Zn, Fe, Co, Ni, Cu, Ag; x=0-10, y=0-10. The hydrolysis reaction is promoted by an acidic substance such as boron oxide (B2O3), citric acid, hydrochloric acid (HCl), or sulfuric acid (H2SO4). The present invention provides an efficient method of drying higher germanes and higher silanes to prevent their further hydrolysis. Another synthetic process involves the reaction of germanium oxide, borohydride and boron oxide with water. Still another process comprises hydrolyzing the Si1-xGex alloy with a very dilute base solution. The methods enable production of higher germanes from a wide range of germanium-starting materials, including germanium byproducts, impure germanium compounds, and waste products generated in the plasma deposition of thin films containing germanium.