CAS: 13759-10-9; Silicon Disulfide

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carbon oxide sulfide silicon silicon monosulfide fluorine

📜白碳黑 反应生成硫化硅(Iv)
参考文献:Yamada,Joiti;Ta,Mura Vataxiro;Makita,Kadzuxisa
标题:Yamada,Joiti;Ta,Mura Vataxiro;Makita,Kadzuxisa

专利信息

专利号:US-2024222113-A1
优先权日:2022-12-29
标 题:Passivation of crystalline substrate for metal chalcogen material synthesis
发明人：NAYLOR CARL H; MAXEY KIRBY; OBRIEN KEVIN; DOROW CHELSEY; LEE SUDARAT; PENUMATCHA ASHISH VERMA; AVCI UYGAR; METZ MATTHEW; CLENDENNING SCOTT B; KAVRIK MAHMUT SAMI; LIN CHIA-CHING; KITAMURA Ande
权利人:INTEL CORP
摘要:Integrated circuit (IC) structures comprising transistors with metal chalcogenide channel material synthesized on a workpiece comprising a Group IV crystal. Prior to synthesis of the metal chalcogenide material, a passivation material is formed over the Group IV crystal to limit exposure of the substrate to the growth precursor gas(es) and thereby reduce a quantity of chalcogen species subsequently degassed from the workpiece. The passivation material may be applied to the front side, back side, and/or edge of a workpiece. The passivation material may be sacrificial or retained as a permanent feature of an IC structure. The passivation material may be advantageously amorphous and/or a compound comprising at least one of a metal or nitrogen that is good diffusion barrier and thermally stable at the metal chalcogenide synthesis temperatures.

专利号:US-2011171816-A1
优先权日:2007-10-18
标题:Synthesis of germanium sulfide and related compounds for solid electrolytic memory elements and other applications
发明人：TOMPA GARY S; COLEMAN ELANE; PROVOST LLOYD G
权利人:STRUCTURED MATERIALS INC
摘要:A method for making high purity GeS and related compounds such as Germanium Silicon Sulfide (GeSiS); Copper Sulfide (CuS); Silicon Sulfide (SiS); Zinc Sulfide (ZnS) and Iron Sulfide (FeS) at low temperatures and pressures in a Chemical Vapor Deposition (CVD) process for solid electrolyte memory elements and other applications. Disclosed is a method of generating a proper chemical and energy environment for the formation of GeS and related compounds on a specific surface. The produced films have utility in memory and other devices. The technology offers cost savings and the advantage of low temperature film creation through the use of plasma assisted deposition—increasing its compatibility for use not only on silicon (or ceramic or glass) non metal substrates as well as polymer or thin metal foil substrates which would be damaged by higher temperature processes.

专利号:US-2024198419-A1
优先权日:2021-04-23
标题 :Apparatus and methods for inorganic electrolyte synthesis
发明人：RUPERT BENJAMIN; PEDERSEN JOSEPHINE
权利人:BLUE CURRENT INC
摘要:Methods for millling particles include exposing particles to microwave energy during milling. The methods reduce or eliminate the need for pre- and post-processing of reagents and products while minimizing waste associated with the slow kinetics of heat transfer in traditional resistive heating furnaces. Method of synthesizing particles include providing precursor particles, microwave susceptor media, and milling media in a reaction vessel and simultaneously rotating the reaction vessel while exposing the reaction vessel to microwaves. Apparatus for milling particles include a microwave housing defining a microwave enclosure; a microwave generator configured to generate and direct microwaves to the microwave enclosure; and a rotation shaft within the microwave enclosure, the rotation shaft connected or configured to be connected to a motor for rotation, wherein the rotation shaft is configured to be rotatably coupled, within the microwave enclosure, to a processing vessel.

专利号:US-12294050-B2
优先权日:2014-12-02
标 题 :Lithium ion conducting sulfide glass fabrication
发明人：VISCO STEVEN J; PETROV ALEXEI; LOGINOVA VALENTINA; NIMON VITALIY; NIMON YEVGENIY S; KATZ BRUCE D
权利人:POLYPLUS BATTERY CO INC
摘要:Preparation of anhydrous lithium sulfide (Li2S) purified suitably for applications in advanced batteries, and, in particular, for synthesis of solid electrolytes based on Li2S, including sulfide solid electrolytes of the type that may be described as crystalline (e.g., polycrystalline), amorphous (e.g., glass) and combinations thereof, such as sulfide glass-ceramic solid electrolyte materials.

专利号:US-5087433-A
优先权日:1987-02-20
标题:Method and apparatus for the production of SiC whisker
发明人：ENOMOTO RYO; MATSUNO YOSHIMI
权利人:IBIDEN CO LTD
摘要:In the production of SiC whisker for composite materials such as FRP, FRM, FRC and the like by vapor phase synthesis between silicon sulfide and carbon compound, SiC whisker suitable for the continuation and mass production is produced in industrial scale by using metallic Si as a starting material through a stage of contacting the metallic silicon with hydrogen sulfide gas to produce silicon sulfide gas, and a stage of contacting the silicon sulfide gas with carbon compound and, if necessary, a formed nucleus to deposit and grow whisker.

专利号:US-4876361-A
优先权日:1986-12-22
标 题:Process for the production of thiophenes from alpha-methylene ketones in the single-stage process and new ortho-fused thiophenes produced by means of the process
发明人：CZOGALLA CLAUS-D
权利人:VON DER HAAR CZOGALLA RITA
摘要:Described is a novel process which can be carried out as a single-stage synthesis for the production of substituted and/or b,d- ortho-fused thiophenes. Serving as starting compounds and alpha -methylene ketones which are reacted in an preferably alcoholic solvent with bromine whereafter the formed intermediate product after separation from the solvent is reacted directly with a sulphurising agent. Preferably under reflux conditions in a suitable solvent to form the end product. In this way also hitherto unknown ortho-fused thiophene compounds are synthesized more especially those with 5 or 9 rings condensed with one another.