CAS: 597-63-7; Tetraethylgermane

上下游产品

ethylmagnesium bromide diethylzinc triethylaluminum ethyl bromidemethane ethane ethene germanium

📜乙基溴化镁置于溴化锗体系中,化学反应生成 四乙基锗
参考文献:Kraus; Flood,Journal Of The American Chemical Society,1932,Vol. 54,P. 1636-1641
标题:Kraus; Flood,Journal Of The American Chemical Society,1932,Vol. 54,P. 1636-1641

专利信息

专利号:US-11332368-B1
优先权日:2019-12-28
标 题:Methods for high-yield synthesis of higher germanes and higher silanes
发明人：HUANG BAOQUAN; LEE HENRY
权利人:GE SOLARTECH LLC
摘要:High-yield synthesis of higher germanes and higher silanes includes the hydrolysis of a germanium- or silicon-containing alloy with chemical formula AxByGe(Si), wherein A=Mg, Ca, Sr, Ba, Li, Na, K, Rb, Cs, and rare earth metals; B=Al, Si, Sn, Ga, Zn, Fe, Co, Ni, Cu, Ag; x=0-10, y=0-10. The hydrolysis reaction is promoted by an acidic substance such as boron oxide (B2O3), citric acid, hydrochloric acid (HCl), or sulfuric acid (H2SO4). The present invention provides an efficient method of drying higher germanes and higher silanes to prevent their further hydrolysis. Another synthetic process involves the reaction of germanium oxide, borohydride and boron oxide with water. Still another process comprises hydrolyzing the Si1-xGex alloy with a very dilute base solution. The methods enable production of higher germanes from a wide range of germanium-starting materials, including germanium byproducts, impure germanium compounds, and waste products generated in the plasma deposition of thin films containing germanium.

专利号:US-4565896-A
优先权日:1984-10-22
标 题 :Process for low pressure synthesis of ethylene glycol from synthesis gas
发明人：KNIFTON JOHN F; DURANLEAU ROGER G
权利人:TEXACO INC
摘要:This invention relates to the manufacture of ethylene glcyol and more particularly to a low pressure process for making ethylene glycol comprising reacting synthesis gas, i.e. a mixture of carbon monoxide and hydrogen, plus formaldehyde in the presence of a homogeneous liquid catalyst containing an effective amount of cobalt-containing compound and a silicon or germanium-containing promoter and a solvent at a temperature of at least 50 DEG C. and a pressure of at least 500 psi wherein said ethylene glycol product separates as a separate liquid phase from the solvent.

专利号:US-4609768-A
优先权日:1984-10-22
标题 :Process for synthesis of ethylene glycol from synthesis gas plus 1,3-dioxolane using 1,3-dioxolane as a solvent
发明人：KNIFTON JOHN F; LIN JIANG-JEN; GRICE NEAL J
权利人:TEXACO INC
摘要:This invention relates to the manufacture of ethylene glycol and more particularly to a low pressure process for making ethylene glycol comprising reacting synthesis gas, i.e. a mixture of carbon monoxide and hydrogen, plus 1,3-dioxolane in the presence of a homogenous liquid catalyst containing an effective amount of cobalt-containing compound, a silane or germane-containing promoter dispersed in a dioxolane solvent at a temperature of at least 50° C. and a pressure of at least 500 psi.

专利号:US-4568780-A
优先权日:1984-10-22
标 题 :Process for low pressure synthesis of ethylene glycol from synthesis gas plus 1,3-dioxolane
发明人：KNIFTON JOHN F
权利人:TEXACO INC
摘要:This invention relates to the manufacture of ethylene glycol and more particularly to a low pressure process for making ethylene glycol comprising reacting synthesis gas, i.e. a mixture of carbon monoxide and hydrogen, plus 1,3-dioxolane in the presence of a homogenous liquid catalyst containing an effective amount of cobalt-containing compound and a silane or germane-containing promoter dispersed in a hydrocarbon solvent at a temperature of at least 50 DEG C. and a pressure of at least 500 psi, where the particular solvents used allow the desired product to be separated from the reaction mixture by phase separation.

专利号:US-8138067-B2
优先权日:2009-06-12
标 题:Method and system for the synthesis of semiconductor nanowires
发明人：RYAN KEVIN M; BARRETT CHRISTOPHER
权利人:RYAN KEVIN M; BARRETT CHRISTOPHER; UNIV LIMERICK
摘要:The invention provides a system and method for producing semiconductor nanowires, for example germanium or Silicon, grown by solution decomposition comprising the steps of heating at least one high boiling point solvent to its reaction temperature in a chamber and injecting a precursor directly into the chamber to react with the at least one high boiling solvent to produce a refluxing solvent. Subsequent vapour deposition of a monomer, achieved by the refluxing solvent, onto a locally heated substrate contained within the chamber produces the semiconductor nanowires. The system and method removes the dependency upon the incorporation of metal catalyst for the production of silicon and germanium nanowire, thereby nullifying the adverse effects of metal contamination in the resulting semiconductor nanowires.

专利号:US-10544046-B2
优先权日:2014-05-15
标题 :Methods and systems for the synthesis of nanoparticles including strained nanoparticles
发明人：HAAG MICHAEL ALLEN
权利人:MSMH LLC
摘要:A method for synthesizing nanoparticles includes aerosolizing a precursor solution in the presence of a flowing carrier gas to yield a reactant stream, the precursor solution comprising a volatile solvent and a nanoparticle precursor. The method further includes heating the reactant stream to a temperature above a boiling point of the volatile solvent to form a product stream comprising a plurality of nanoparticles, cooling the product stream, and passing the product stream through a collection liquid to collect the nanoparticles from the product stream.