CAS: 14781-45-4; Copper(Ii)Hexafluor-2,4-Pentanedionate

上下游产品

CAS号1522-22-1 六氟乙酰丙酮 | CAS号6046-93-1 醋酸铜 | CAS号142-71-2 醋酸铜 | CAS号20427-59-2 氢氧化铜

Yttrium(III)Hexafluoroacetylacetonate Dihydrate*copper(II)Acetylacetonate 反应生成双(六氟乙酰丙酮)合铜(II)
参考文献:Kuz'Mina; Kupriyanova; Troyanov,Russian Journal Of Coordination Chemistry,2000,Vol. 26,# 5,P. 367-372
标题:Kuz'Mina; Kupriyanova; Troyanov,Russian Journal Of Coordination Chemistry,2000,Vol. 26,# 5,P. 367-372

专利信息

专利号:US-6015918-A
优先权日:1998-11-10
标 题 :Allyl-derived precursor and synthesis method
发明人：ZHUANG WEI-WEI; NGUYEN TUE; STECKER GREG MICHAEL; EVANS DAVID RUSSELL; HSU SHENG TENG
权利人:SHARP LAB OF AMERICA INC
摘要:A Cu(hfac) allyl-derived ligand precursor has been provided. The ligand includes group consisting of alkyl, phenyl, trialkylsilane, trialkoxylsilane, halodialkylsilane, dihaloalkylsilane, trihalosilane, triphenylsilane, alkoxyl, halogen, chloroformate, cynanide, cycloalkyl, cycloalkylamine, alkyl ether, isocyanate, and pentafluorobenzene. Examples of the allyl-derived ligand precursors have proved to be stable at room temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursors, including a Cu(hfac)(allyltrimethylsilane) precursor.

专利号:US-5994571-A
优先权日:1998-11-10
标题 :Substituted ethylene precursor and synthesis method
发明人：ZHUANG WEI-WEI; NGUYEN TUE; CHARNESKI LAWRENCE J; EVANS DAVID RUSSELL; HSU SHENG TENG
权利人:SHARP LAB OF AMERICA INC
摘要:A Cu(hfac) precursor with a substituted ethylene ligand has been provided. The substituted ethylene ligand includes bonds to molecules selected from the group consisting of C 1 to C 8 alkyl, C 1 to C 8 haloalkyl, H, and C 1 to C 8 alkoxyl. One variation, the 2-methyl-1-butene ligand precursor has proved to be stable at room temperature, and extremely volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. Because of the volatility, the deposition rate of copper deposited with this precursor is very high. A synthesis method has been provided which produces a high yield of the above-described precursor.

专利号:US-6669870-B2
优先权日:1998-12-11
标题:Substituted phenylethylene precursor synthesis method
发明人：ZHUANG WEI-WEI; NGUYEN TUE; CHARNESKI LAWRENCE J; EVANS DAVID R; HSU SHENG TENG
权利人:SHARP LAB OF AMERICA INC
摘要:A Cu(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the alpha-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.

专利号:US-10954139-B2
优先权日:2015-12-11
标 题:Oleophilic foams for oil spill mitigation
发明人：DARLING SETH B; ELAM JEFFREY W; MANE ANIL U
权利人:UCHICAGO ARGONNE LLC
摘要:A method of fabricating an oleophilic foam includes providing a foam comprising a base material. The base material is coated with an inorganic material using at least one of an atomic layer deposition (ALD), a molecular layer deposition (MLD) or sequential infiltration synthesis (SIS) process. The SIS process includes at least one cycle of exposing the foam to a first metal precursor for a first predetermined time and a first partial pressure. The first metal precursor infiltrates at least a portion of the base material and binds with the base material. The foam is exposed to a second co-reactant precursor for a second predetermined time and a second partial pressure. The second co-reactant precursor reacts with the first metal precursor, thereby forming the inorganic material on the base material. The inorganic material infiltrating at least the portion of the base material. The inorganic material is functionalized with an oleophilic material.

专利号:US-11351478-B2
优先权日:2018-09-06
标题 :Oil skimmer with oleophilic coating
发明人：DARLING SETH B; ELAM JEFFREY W
权利人:UCHICAGO ARGONNE LLC
摘要:A method of fabricating an coating includes providing a coating comprising a base material. The base material is coated with an inorganic material using at least one of an atomic layer deposition (ALD), a molecular layer deposition (MLD), or sequential infiltration synthesis (SIS) process. The SIS process includes at least one cycle of exposing the coating to a first metal precursor for a first predetermined time and a first partial pressure. The first metal precursor infiltrates at least a portion of the base material and binds with the base material. The coating is exposed to a second co-reactant precursor for a second predetermined time and a second partial pressure. The second co-reactant precursor reacts with the first metal precursor, thereby forming the inorganic material on the base material. The inorganic material infiltrating at least the portion of the base material. The inorganic material is functionalized with a material.

专利号:US-10870917-B2
优先权日:2016-07-08
标 题:Functionalized foams
发明人：DARLING SETH B; ELAM JEFFREY W; MANE ANIL U; SNYDER SETH W
权利人:UCHICAGO ARGONNE LLC
摘要:A method of fabricating an foam includes providing a foam comprising a base material. The base material is coated with an inorganic material using at least one of an atomic layer deposition (ALD), a molecular layer deposition (MLD), or sequential infiltration synthesis (SIS) process. The SIS process includes at least one cycle of exposing the foam to a first metal precursor for a first predetermined time and a first partial pressure. The first metal precursor infiltrates at least a portion of the base material and binds with the base material. The foam is exposed to a second co-reactant precursor for a second predetermined time and a second partial pressure. The second co-reactant precursor reacts with the first metal precursor, thereby forming the inorganic material on the base material. The inorganic material infiltrating at least the portion of the base material. The inorganic material is functionalized with a material.