CAS: 10060-11-4; Dichlorogermanium

上下游产品

germanium Iodine mon°Chloride lead(II) chloride germaniumtetrachloride

📜三氯锗烷 反应生成锗二氯化物
参考文献:He(i)瞬态物质的光电子光谱:二氯化锗和二溴化锗
标题:He(i)瞬态物质的光电子光谱:二氯化锗和二溴化锗
摘要:描述了一种用于在气相中产生实际上不含杂质的不稳定的单体二卤化锗的方法.报道了具有18个价电子的瞬态gecl 2和gebr 2的he(i)光电子能谱.根据hartree-Fock-Slater Lcao计算分析结果.与先前的vi A组具有20个价电子的二卤化物进行了比较.因为在gecl 2和gebr 2中,锗4S轨道的参与很重要,所以不再仅凭价p轨道就可以解释光谱.
Doi:10.1016/0301-0104(82)85106-9

专利信息

专利号:US-9051516-B2
优先权日:2011-11-16
标 题:Melt stabilization and vapor-phase synthesis of cesium germanium halides
发明人：BOWMAN STEVEN R; CONDON NICHOLAS J; O'CONNOR SHAWN P
权利人:US NAVY
摘要:The method described herein allows for melt stabilization and vapor-phase synthesis of a cesium germanium halide utilizing germanium dihalides formed in situ. This disclosure allows for the melting of cesium germanium halides without decomposition, which allows for growing crystals of these materials from the melt. This disclosure allows for a direct synthesis of these materials without the use of water or the introduction of other possible contaminants.

专利号:US-2007074541-A1
优先权日:2003-10-10
标 题:Synthesis of germanium sulphide and related compounds
发明人：BADDING JOHN V; HEWAK DANIEL W; HUANG CHUNG-CHE
权利人:UNIV SOUTHAMPTON
摘要:The invention relates to synthesis of germanium sulphide glasses and optical devices formed therefrom. In a chemical vapour deposition process, germanium tetrachloride is reacted with hydrogen sulphide at temperatures in the range 450-700° C. to form germanium sulphide. Lower temperatures within this range of 450-550° C. directly produce a glass, whereas higher temperatures within the range of 600-700° C. produce a crystalline powder which can then be reduced to a glass by subsequent melting and annealing. The reaction is preferably carried out at atmospheric pressure or slightly higher. Thin films and bulk glasses suitable for optical waveguides can be formed directly in one processing step as can powders and microspheres. The materials synthesised are of a high purity with low oxide impurities and only trace levels of transition metal ions.

专利号:US-11332368-B1
优先权日:2019-12-28
标 题:Methods for high-yield synthesis of higher germanes and higher silanes
发明人：HUANG BAOQUAN; LEE HENRY
权利人:GE SOLARTECH LLC
摘要:High-yield synthesis of higher germanes and higher silanes includes the hydrolysis of a germanium- or silicon-containing alloy with chemical formula AxByGe(Si), wherein A=Mg, Ca, Sr, Ba, Li, Na, K, Rb, Cs, and rare earth metals; B=Al, Si, Sn, Ga, Zn, Fe, Co, Ni, Cu, Ag; x=0-10, y=0-10. The hydrolysis reaction is promoted by an acidic substance such as boron oxide (B2O3), citric acid, hydrochloric acid (HCl), or sulfuric acid (H2SO4). The present invention provides an efficient method of drying higher germanes and higher silanes to prevent their further hydrolysis. Another synthetic process involves the reaction of germanium oxide, borohydride and boron oxide with water. Still another process comprises hydrolyzing the Si1-xGex alloy with a very dilute base solution. The methods enable production of higher germanes from a wide range of germanium-starting materials, including germanium byproducts, impure germanium compounds, and waste products generated in the plasma deposition of thin films containing germanium.

专利号:US-7838694-B2
优先权日:2004-04-23
标题 :Semi-synthesis and isolation of taxane intermediates from a mixture of taxanes
发明人：NAIDU RAGINA; FOO SAMUEL SIANG KIANG
权利人:CHATHAM BIOTEC LTD
摘要:A process is provided for the semi-synthesis and isolation of taxane intermediates useful in the preparation of paclitaxel and docetaxel, in particular, the semi-synthesis and isolation of 10-deacetylbaccatin III, the semi-synthesis of a mixture of 10-deacetylbaccatin III and baccatin III, and protected derivatives thereof, from a mixture of taxanes.

专利号:US-2011171816-A1
优先权日:2007-10-18
标题:Synthesis of germanium sulfide and related compounds for solid electrolytic memory elements and other applications
发明人：TOMPA GARY S; COLEMAN ELANE; PROVOST LLOYD G
权利人:STRUCTURED MATERIALS INC
摘要:A method for making high purity GeS and related compounds such as Germanium Silicon Sulfide (GeSiS); Copper Sulfide (CuS); Silicon Sulfide (SiS); Zinc Sulfide (ZnS) and Iron Sulfide (FeS) at low temperatures and pressures in a Chemical Vapor Deposition (CVD) process for solid electrolyte memory elements and other applications. Disclosed is a method of generating a proper chemical and energy environment for the formation of GeS and related compounds on a specific surface. The produced films have utility in memory and other devices. The technology offers cost savings and the advantage of low temperature film creation through the use of plasma assisted deposition—increasing its compatibility for use not only on silicon (or ceramic or glass) non metal substrates as well as polymer or thin metal foil substrates which would be damaged by higher temperature processes.

专利号:US-9272272-B2
优先权日:2008-05-21
标题 :Process for the direct synthesis of Cu containing zeolites having CHA structure
发明人：TRUKHAN NATALIA; Müller Ulrich; BULL IVOR
权利人:BASF SE
摘要:A process for the preparation of a copper containing zeolitic material having CHA framework structure and a composition comprising the molar ratio (n YO2):X2O3 wherein X is a trivalent element, preferably Al, Y is a tetravalent element, preferably Si, and wherein n is preferably at least 20, and wherein the calcined material comprises crystallites having edges, and at least 90% of the crystallites have edges with a mean length in the range of from 1 to 5 micrometer. The process comprising the preparation of an phosphor-free aqueous solution containing at least one source for X2O3 and at least one source for YO2, at least one structure directing agent suitable for the preparation of a zeolitic material having CHA framework structure, and at least one Cu source, and the process further comprising the hydrothermal crystallization of said aqueous solution obtaining a suspension containing the copper containing zeolitic material having CHA framework structure.