CAS: 409-21-2; Silicon Monocarbide

甲烷,硅烷 以 Gaseous Matrix 作为反应溶剂,化学反应生成 碳化硅
参考文献:The First Lif Spectrum Of Sic
标题:The First Lif Spectrum Of Sic
摘要:We Report The First Lif Spectrum Of The Sic Free Radical. The Sic Molecules Are Produced Using Pulsed-Laser Vaporization Of Silicon In Combination With A Supersonic Expansion. The Spectrum Observed Around 410 Nm Is Assigned As C 3-Pi(Upsilon' = 3)-X 3-Pi(Upsilon" = 0). The Molecular Constants In Cm-1 Are: Nu-30 = 24399.5(1),A =-31.100(49) And B = 0.54088(75). The Electronic Lifetime Of This Upsilon' = 3 Level Is Measured To Be 805(50) Ns.
DOI:10.1016/0009-2614(91)90052-B

专利信息

专利号:US-2024034686-A1
优先权日:2020-12-18
标题:Vapor-mediated synthesis of silicon carbide matrices for ceramic matrix composites by reactive melt infiltration
发明人：SILVERSTEIN RAVIT; ZOK FRANK W; LEVI CARLOS G
权利人:UNIV CALIFORNIA
摘要:A two-step synthesis of SiC including initial exposure of carbon surfaces to Si vapor, followed by Si melt infiltration, is described herein. Interrupted differential thermal analysis (DTA) of amorphous C and Si powder mixtures and microstructure characterization are used to identify the stages of the reaction. Exposure to Si vapor yields a SiC layer with nanoscale porosity driven by the volume change associated with the reaction. This forms a continuous pore network that promotes subsequent melt access to the reaction front with the C. While the pores remain open, the vapor phase reaction proceeds at a nearly-constant rate and exhibits a strong temperature sensitivity, the latter due largely to the temperature sensitivity of the Si vapor pressure. The implications for enhancing the reactive melt infiltration process and fabrication of SiC matrices for ceramic composites are discussed.

专利号:US-2022372000-A1
优先权日:2021-05-05
标 题:New Process for the Synthesis of 5-Fluoro-3-(Difuoromethyl)-5-Fluoro-1-Methyl-1H-Pyrazole-4-Carboxylic Acid Derivatives and the Free Acid Thereof
发明人：LUO WEIFEN; WU WENTING
权利人:FUJIAN YONGJING TECH CO LTD
摘要:The invention provides a new process for the synthesis of 5-fluoro-3-(difluoromethyl)-5-fluoro-1-methyl-1H-pyrazole-4-carboxylic acid derivatives and the free acid thereof, involving a direct fluorination reaction with a fluorination gas comprising or consisting of elemental fluorine (F2), in a reactor which is resistant to elemental fluorine (F2) and hydrogen fluoride (HF), and wherein in the process as a starting material a difluoromethyl-pyrazole compound dissolved in an inert solvent is subjected to the direct fluorination reaction. Some particular examples of 5-fluoro-3-(difluoromethyl)-5-fluoro-1-methyl-1H-pyrazole-4-carboxylic acid derivatives which can be prepared according to the process of the invention are 3-(difluoromethyl)-5-fluoro-1-methyl-1H-pyrazole-4-carboxylic acid fluoride (5F-DFMPAF), also known under the alternative name 3-(difluoromethyl)-5-fluoro-1-methyl-1H-pyrazole-4-carbonyl fluoride; 3-(difluoromethyl)-5-fluoro-1-methyl-1H-pyrazole-4-carboxylic acid ethylester (5F-DFMP); and 3-(chlorodifluoromethyl)-5-fluoro-1-methyl-1H-pyrazole-4-carboxylic acid ethylester (5F-CDFMP), or the corresponding methyl esters. The 5-fluoro-3-(difluoromethyl)-5-fluoro-1-methyl-1H-pyrazole-4-carboxylic acid can be obtained from its carboxylic acid derivatives such as, e.g., mentioned before in that the acid derivative is converted to the corresponding carboxylic acid.

专利号:US-2024101506-A1
优先权日:2021-01-26
标 题 :Continuous process for the synthesis of dimethyl carbonate over a cerium-based catalyst formulation
发明人：SRINIVAS DARBHA; BOKADE VIJAY VASANT; NIPHADKAR PRASHANT SURESH; PULIKKEEL UNNIKRISHNAN; PARMAR SNEHALKUMAR; AMTE VINAY; SENGUPTA SURAJIT; DAS ASIT KUMAR
权利人:COUNCIL SCIENT IND RES
摘要:The present invention discloses a continuous process for the synthesis of dimethyl carbonate from methanol and carbon dioxide over a ceria-based mixed metal oxide-silica catalyst formulation in the presence of a dehydrating or water trapping compound (2-Cyanopyridine).

专利号:US-9944532-B2
优先权日:2013-10-22
标 题 :Solid source and method for the synthesis of silicon-containing precursors for chemical vapor deposition
发明人：SCARLETE MIHAI; AKTIK CETIN
权利人:SOCPRA SCIENCE ET GENIE S E C; UNIV DE BISHOP; SOCPRA SCIENCE ET GENIE S E C
摘要:The present document described a solid source and a method for synthesis of silicon-containing precursors for chemical vapor deposition. The solid source comprises a solid polysilane; an energy coupling agent distributed in the solid polysilane; and hydrogen, mixed with the solid polysilane and the energy coupling agent distributed in the solid polysilane, in a necessary amount to satisfy a hydrogen deficiency during a hydrogenolysis reaction.

专利号:WO-2012085174-A1
优先权日:2010-12-22
标题:Process for the electrochemical synthesis of hydrogen peroxide and use of a catalyst therefore
发明人：SCHIFFRIN DAVID JORGE; STASZAK-JIRKOVSKY JAKUB; HALASA MATEJ
权利人:SOLVAY; SCHIFFRIN DAVID JORGE; STASZAK-JIRKOVSKY JAKUB; HALASA MATEJ
摘要:A process for the electrochemical synthesis of hydrogen peroxide, comprising reacting oxygen and hydrogen in the presence of a catalyst comprising at least gold and palladium deposited on a carrier, wherein the molar ratio of gold to palladium is higher than 1:1.

专利号:WO-9819964-A1
优先权日:1996-11-04
标题:Method for the synthesis of group iii nitride crystals
发明人：ANGUS JOHN C; ARGOITIA ALBERTO; HAYMAN CLIFF C
权利人:UNIV CASE WESTERN RESERVE; ANGUS JOHN C; ARGOITIA ALBERTO; HAYMAN CLIFF C
摘要:A novel method for the synthesis of Group III nitride crystals is disclosed. The method contemplates the reaction of a liquid form of the Group III nitride metal with active nitrogen. The active nitrogen may be generated by a plasma or the thermal decomposition of ammonia and may be neutral, ionic, excited or a mixture thereof. Using the method of the present invention, the crystalline Group III nitride can be grown at pressures of one atmosphere and below. Polycrystalline films grown by this method are of sufficient quality to show luminescence at room temperature.