CAS: 82356-80-7; 1,3-Dibutyl-1,1,3,3-Tetramethyldisilazane

相似化合物

14579-90-9 17882-94-9 39482-87-6

上下游产品

butyldimethylsilyl chloride

📜叔丁基三甲基氯硅烷置于氨体系中,用 Petroleum Ether 作为反应溶剂,以84%的收率获得产物1,3-二丁基-1,1,3,3-四甲基硅氮烷
参考文献:Synthesis And Characterization Of Dibutyltetramethyldisilazane-Bonded Silica Phases For Reversed-Phase High-Performance Liquid Chromatography
标题:Synthesis And Characterization Of Dibutyltetramethyldisilazane-Bonded Silica Phases For Reversed-Phase High-Performance Liquid Chromatography
摘要:A New Sllane,Dl-N-Butyltetramethyldisllazane (Dbtmds),Has Been Synthesized. Sllanizations With Dbtmds Of A Narrow-Pore And A Wide-Pore Silica Yielded Relatively High Concentrations Of Bonded N-Butyl Ligands,Of 4.22 And 4.09-Mu-Mol/m2,Respectively. The Chromatographic Properties Of The N-Butyl Bonded Phase (C4-Nh),Synthesized With Dbtmds,Were Compared With N-Butyl Bonded Phases (C4-Cl) Synthesized With N-Butyldimethylchlorosilane (Bdmcs) And Vydac-C4 Under The Same Chromatographic Conditions. The Adsorption Of Basic Compounds Including N,N-Diethylaniline (N,N-Dea),Dansylarginine (Dns-Arg),And (Phenylthlo)Hydantoin-Arginine (Pth-Arg),As Well As Several Polypeptides And Small Proteins Including Angiotensin I,Angiotensin Ii,And Lysozyme,Was Shown To Be Less For The C4-Nh Sorbents Than For C4-Cl And Vydac-C4 Sorbents. While The S Value For The Basic Protein Lysozyme Was Significantly Lower On The Wide-Pore C4-Nh Sorbent,The S And Log K0 Values For A Range Of Selected Proteins Were Comparable To Those Obtained With The Vydac-C4 Sorbent. The Tests Of Hydrolytic Stability Of The Bonded Phases Showed Significantly Greater Stability For The C4-Nh Sorbents Than For The C4-Cl Sorbents Under Isocratic Mobile-Phase Conditions Of 10 % And 40 % Acetonitrile With 0.1 % Tfa.
DOI:10.1021/ac00017A035

专利信息

专利号:US-10011903-B2
优先权日:2015-12-31
标题:Manganese-containing film forming compositions, their synthesis, and use in film deposition
发明人：WIESE STEFAN; GATINEAU SATOKO; GIRARD JEAN-MARC
权利人:AIR LIQUIDE; AIR LIQUIDE
摘要:Manganese-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The manganese-containing film forming compositions comprise silylamide-containing precursors, particularly {Mn[N(SiMe 2 Et) 2 ] 2 } 2 .