CAS: 12039-83-7; Titanium Silicide (Tisi2)

专利信息

专利号:US-4990180-A
优先权日:1988-07-28
标 题:Combustion synthesis of low exothermic component rich composites
发明人：HALVERSON DANNY C; LUM BEVERLY Y; MUNIR ZUHAIR A
权利人:US ENERGY
摘要:A self-sustaining combustion synthesis process for producing hard, tough, lightweight, low exothermic potential product (LEPP)/high exothermic potential product (HEPP) composites is based on the thermodynamic dependence of adiabatic temperature and product composition on the stoichiometry of the LEPP and HEPP reactants. For lightweight products the composition must be relatively rich in the LEPP component. LEPP rich composites are obtained by varying the initial temperature of the reactants. The product is hard, porous material whose toughness can be enhanced by filling the pores with aluminum or other metal phases using a liquid metal infiltration process. The process can be extended to the formation of other composites having a low exothermic component.

专利号:WO-2023085185-A1
优先权日:2021-11-09
标题 :Catalyst composition, method for promoting catalytic activity, method for producing catalyst composition, and ammonia synthesis method using catalyst composition
发明人：KITANO MASAAKI; HOSONO HIDEO; YOKOYAMA TOSHIHARU; OKUNAKA MASAAKI
权利人:JAPAN SCIENCE & TECH AGENCY
摘要:Provided is a catalyst composition that is capable of improving catalyst performance by having a catalyst additive added thereto. The catalyst composition is characterized by comprising: a catalyst additive represented by formula (1) LmAn; and a chemical reaction catalyst that includes a catalyst substance represented by formula (2) MpOqCwNsHt. (In formula (1), L represents at least one selected from the group consisting of transition elements and Al, A represents at least one selected from the group consisting of Si, O, N, and C, m represents a numerical value of 1 or more, and n represents a numerical value of 0 or more. In formula (2), M represents one or more selected from the group consisting of typical elements and transition elements, M does not include Al and Ca at the same time, p represents a numerical value of 0 or more, q represents a numerical value of 0 or more, w represents a numerical value of 0 or more, s represents a numerical value of 0 or more, and t represents a numerical value of 0 or more. q, w, s, and t are not 0 at the same time.

专利号:US-4933241-A
优先权日:1987-05-29
标题:Processes for forming exoergic structures with the use of a plasma and for producing dense refractory bodies of arbitrary shape therefrom
发明人：HOLT J BIRCH; KELLY MICHAEL D
权利人:US ENERGY
摘要:Plasma spraying methods of forming exoergic structures and coatings, as well as exoergic structures produced by such methods, are provided. The methods include the plasma spraying of reactive exoergic materials that are capable of sustaining a combustion synthesis reaction onto a flat substrate or into molds of arbitrary shape and igniting said plasma sprayed materials, either under an inert gas pressure or not, to form refractory materials of varying densities and of varying shapes.

专利号:US-5213730-A
优先权日:1988-10-06
标 题:Controlled combustion synthesis process for the production of silicide based composites
发明人：HIDA GEORGE T
权利人:BENCHMARK STRUCTURAL CERAMICS
摘要:There is disclosed a process in which a transition metal compound is mixed with silica until a specified density of intimate contact points is produced in the mixture. To this mixture is then added a reducing agent. Thereafter, a reinforcing agent is intimately dispersed throughout the mixture, the mixture is formed into a green body, and it then is ignited.

专利号:US-9206507-B2
优先权日:2011-09-27
标题 :Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions
发明人：LANSALOT-MATRAS CLÉMENT; GATINEAU JULIEN; JURCIK JR BENJAMIN J
权利人:L AIR LIQUIDE SOCIÉTÉ ANONYME POUR L ETUDE ET L EXPL DES PROCÉDÉS GEORGES CLAUDE; AIR LIQUIDE AMERICAN
摘要:Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formula Ni(R-DAD) 2 , wherein R-DAD stands for substituted 1,4-diazabuta-1,3-diene ligands. The sole presence of the Ni—N bonds was also considered to avoid too high intrusion of other elements, such as carbon, into the nickel-containing films. The flexibility of the Ni—N bond in terms of film deposition also allows using the molecules for nickel, nickel-nitride, nickel-carbonitride, nickel oxide or any other type of nickel-containing films. The nickel-containing film depositions can be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD or any other type of depositions methods.

专利号:US-2014377160-A1
优先权日:2013-05-31
标题 :Combustion synthesis of graphene and carbonous nanomaterials