CAS: 13637-68-8; Dioxomolybdenum(Vi) Chloride

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CAS号10241-05-1 五氯化钼 | CAS号107-46-0 六甲基二硅氧烷 | CAS号76-06-2 氯化苦 | CAS号120486-30-8 molybdenum diox...

以 Solid 用作溶剂,化学反应生成二氯二氧化钼
参考文献:Cook,Neil D.; Timms,Peter L.,Journal Of The Chemical Society,Dalton Transactions,1983,P. 239-244
标题:Cook,Neil D.; Timms,Peter L.,Journal Of The Chemical Society,Dalton Transactions,1983,P. 239-244

专利信息

专利号:EP-2616475-A1
优先权日:2010-09-14
标题:Organometallic molybdenum acetylide dioxo complex and process for the preparation thereof
发明人：UMBARKAR SHUBHANGI BHALCHANDRA; DONGARE MOHAN KERABA; BIRADAR ANKUSH; ACHAM VAIBHAV RAVINDRAKUMAR
权利人:COUNCIL SCIENT IND RES
摘要:The invention discloses organometallic molybdenum acetylide dioxo complex of formula (η 5 -C 5 H 5 )MoO 2 (-Cs≡CPh) and provides a simple, short, efficient process for the synthesis of organometallic molybdenum dioxo complex which is used as catalyst for a number of oxidation reactions.

专利号:US-2013197245-A1
优先权日:2010-09-14
标 题:Organometallic Molybdenum Acetylide Dioxo Complex And Process For The Preparation Thereof
发明人：UMBARKAR SHUBHANGI BHALCHANDRA; DONGARE MOHAN KERABA; BIRADAR ANKUSH; ACHAM VAIBHAV RAVINDRAKUMAR
权利人:UMBARKAR SHUBHANGI BHALCHANDRA; DONGARE MOHAN KERABA; BIRADAR ANKUSH; ACHAM VAIBHAV RAVINDRAKUMAR
摘要:An organometallic molybdenum acetylide dioxo complex of formula (η 5 -C 5 H 5 )MoO 2 (—Cs≡CPh) and provides a simple, short, efficient process for the synthesis of organometallic molybdenum dioxo complex which is used as catalyst for a number of oxidation reactions.

专利号:US-2025250673-A1
优先权日:2021-11-11
标题 :ALD Deposition Utilizing MoO2Cl2 and MoO2Br2
发明人：MILLER MICHAEL; HIGUCHI RANDALL; NGO THONG; AZCATL-ZACATZI ANGELICA; LEI XINJIAN
权利人:VERSUM MAT US LLC
摘要:The disclosed and claimed subject matter relates to atomic layer deposition (ALD) of 2D MoX 2 (X=S, Se or Te) utilizing one or more of MoO 2 Cl 2 and MoO 2 Br 2 as the Mo-precursor with alkyl-chalcogenide, alkyl-dichalcogenide, and/or dihydro-chalcogenide precursors while maintaining the process in a self-limiting-layer-synthesis growth mode or a self-limiting-layer-synthesis-like growth mode.

专利号:US-6171571-B1
优先权日:1999-05-10
标题 :Crystalline multinary metal oxide compositions, process for preparing and processes for using the composition
发明人：BEDARD ROBERT L; BOGDAN PAULA L; KING LISA M; KOSTER SUSAN C
权利人:UOP LLC
摘要:A new family of crystalline metal oxide compositions have been synthesized. These compositions are described by the empirical formula: n n n A n NbM x M′ y M″ m O p n n n where A is an alkali metal cation, ammonium ion and mixtures thereof, M is tungsten, molybdenum, or mixtures thereof. M′ is vanadium, tantalum and mixtures thereof, and M″ is antimony, tellurium and mixtures thereof. M′ and M″ are optional metals. These compositions are characterized by having an x-ray diffraction pattern having at least one peak at a d spacing of about 3.9 â„«. A hydrothermal synthesis procedure as well as processes using the composition, e.g., ammoxidation of propane, are also disclosed.

专利号:WO-02051539-A1
优先权日:2000-12-22
标题 :Crystalline multinary metal oxide compositions, process for preparing and processes for using the composition
发明人：BEDARD ROBERT L; BOGDAN PAULA L; KING LISA M; KOSTER SUSAN C
权利人:UOP LLC; BEDARD ROBERT L; BOGDAN PAULA L; KING LISA M; KOSTER SUSAN C
摘要:A new family of crystalline metal oxide compositions have been synthesized. These compositions are described by the empirical formula: AnMM'xMyOp where A is an alkali metal cation, ammonium ion and mixtures thereof, M is niobium or tantalum, M' is tungsten, molybdenum, or mixtures thereof. M' is vanadium, tantalum, niobium, titanium, tin indium, gallium, aluminum, bismuth, antimony, tellurium and mixtures thereof. M' is an optional metal. These compositions are characterized by having an x-ray diffraction pattern having at least one peak at a d spacing of about 3.9Ã…. A hydrothermal synthesis procedure as well as hybrocarbon conversion processes using the composition are also disclosed.