CAS: 25617-97-4; Azanylidynegallane

📜N,N-Diethylethanamine;Gallane 反应生成氮化镓
参考文献:Melas,Andreas A.;Braunagel,Norbert
标题:Melas,Andreas A.;Braunagel,Norbert

专利信息

专利号:WO-9819964-A1
优先权日:1996-11-04
标题:Method for the synthesis of group iii nitride crystals
发明人：ANGUS JOHN C; ARGOITIA ALBERTO; HAYMAN CLIFF C
权利人:UNIV CASE WESTERN RESERVE; ANGUS JOHN C; ARGOITIA ALBERTO; HAYMAN CLIFF C
摘要:A novel method for the synthesis of Group III nitride crystals is disclosed. The method contemplates the reaction of a liquid form of the Group III nitride metal with active nitrogen. The active nitrogen may be generated by a plasma or the thermal decomposition of ammonia and may be neutral, ionic, excited or a mixture thereof. Using the method of the present invention, the crystalline Group III nitride can be grown at pressures of one atmosphere and below. Polycrystalline films grown by this method are of sufficient quality to show luminescence at room temperature.

专利号:US-8784766-B1
优先权日:2009-01-16
标 题 :Diamond synthesis employing nanoparticle seeds
发明人：UPPIREDDI KISHORE; MORELL GERARDO; WEINER BRAD R
权利人:UPPIREDDI KISHORE; MORELL GERARDO; WEINER BRAD R; UNIV PUERTO RICO
摘要:Iron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

专利号:US-6207844-B1
优先权日:1999-05-12
标题:Compounds and methods for depositing pure thin films of gallium nitride semiconductor
发明人：KOUVETAKIS JOHN; MCMURRAN JEFF
权利人:UNIV ARIZONA
摘要:The invention is directed to novel compounds which serve as single-source precursors for the deposition of gallium nitride on thin films. The invention is also directed to methods for the synthesis of these novel compounds. The invention is further directed to methods for the use of such compounds in the deposition of gallium nitride on thin films and in the synthesis of bulk materials.

专利号:US-2019134585-A1
优先权日:2016-05-09
标题:Synthesis of oxygen and boron trihalogenide functionalized two-dimensional layered materials in pressurized medium
发明人：NEMETH KAROLY; DANBY ANDREW M; SUBRAMANIAM BALA
权利人:BORON NITRIDE POWER LLC; UNIV KANSAS
摘要:A method that uses a pressurized reactive medium composed of inert solvents such as pressurized liquid or supercritical fluid carbon dioxide (C02), and sulfur hexafluoride (SF6) and reactive dissolved species ozone (03) and/or boron trifluoride (BF3) and general boron trihalogenides (BX3) to react with two-dimensional (2D) layered materials and thereby synthesize covalently oxygen and/or BX3 functionalized exfoliated 2D layered materials. When 2D layered materials are dispersed in these reactive liquids or fluids by ultrasound sonication or high shear mixing, a simultaneous covalent functionalization and exfoliation of the 2D layered materials happens. Following attainment of the required extent of functionalization and exfoliation, the unreacted 03, BX3, SF6 and C02 can be easily removed as gases by decompression leaving behind the solid phase, thereby leading to efficient and economical production of functionalized and exfoliated 2D layered materials.

专利号:US-2023387816-A1
优先权日:2022-05-25
标题 :Fabrication trade-off based optimal synthesis of winding configurations for planar transformer in capacitor-inductor-inductor-capacitor (cllc) direct current (dc)-dc converter
发明人：MALLIK AYAN; CHANDWANI ASHWIN
权利人:UNIV ARIZONA STATE
摘要:Adhering to the objective of modelling and selecting the most optimal winding configuration for a high frequency planar transformer (HFPT) for auxiliary charging systems for more electric aircrafts (MEA) this disclosure elucidates numerous fabrication and design-based constraints and correlations to enable parametric modelling of various magnetic components. This disclosure characterizes possible winding configurations for HFPT employed in a bidirectional CUE DC/DC converter. A detailed analytical study is presented for each component and verified using several instances of 3D Finite Element Analysis (FEA) based model to synthesize the effective field and current density distribution in the windings. Several design-based trade-offs are graphically explained with various criteria pertaining to optimal winding selection to study the interdependence of the resultant parameters on hardware specifications, such as the PCB thickness and its fabrication layout, air gaps and conductor thickness.

专利号:US-7641880-B2
优先权日:2006-05-03
标题 :Room temperature synthesis of GaN nanopowder
发明人：VAN PATTEN PAUL GREGORY; PAN GUIQUAN
权利人:UNIV OHIO
摘要:In the direct production of GaN by the metathesis of Li 3 N and GaCl 3 or GaBr 3 or GaI 3 , the reaction rate and yields can be greatly enhanced by including diethyl ether in the reaction system.