CAS: 17475-67-1; Hafnium(ⅳ) Acetylacetonate
该化合物是一种金属有机化合物,广泛用于化学蒸汽沉降(CVD)和原子层沉积(ALD)程序,用于薄膜应用,其高度挥发性和热稳定性使其适合存放氧化氢(HfO2)薄膜,这些薄膜对于生产高电离电层的半导体至关重要;该化合物表现出极纯度和连续分解行为,确保了胶片的生长和精确的测量控制;此外,其有机溶剂的溶解性便于在基于溶液的沉积技术中处理;乙酰乙酰胺在生产高性电子和光学涂层时具有可靠性,符合先进材料合成的严格行业要求.
- 英文名称Hafnium(ⅳ) Acetylacetonate
- 中文名称乙酰丙酮铪
- IUPAC名称hafnium;tetrakis((Z)-4-hydroxypent-3-en-2-one)
- 其它别名Hafnium,tetrakis(2,4-pentanedionato)- (6CI,7CI,8CI); Hafnium,tetrakis(2,4-pentanedionato-O,O')-,(SA-8-11''11''1'1'''1'1''')-; Hafnium, tetrakis(2,4-pentanedionato-kO,kO')-,(SA-8-11''11''1'1'''1'1''')- (9CI); Hafnium acetylacetonate; Hafnium tetrakis(acetylacetonate); Tetrakis(acetylacetonato)hafnium
- CAS编号17475-67-1
- MFCD编号:MFCD00044997
- EINECS号:681-372-7
- 分子式:C20H28HfO8分子量:574.92
- 产品CID: 892104
- 产品分类有机原料 → 有机金属类化合物 → 有机铪,汞,银,铂等
- 相似结构搜索
- 产品信息参考
- InChIKey: GXNMJQUZCICHBX-UHFFFAOYSA-N
- 1S/4C5H8O2.Hf/c4*1-4(6)3-5(2)7;/h4*3,6H,1-2H3;/b4*4-3-;
- 计算化学: 氢键受体数12.0氢键供体数*可旋转键数*
物理性质
MSDS等安全信息
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海关参考信息
- 2901210000-乙烯
2901220000-丙烯
2912110000-甲醛
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专利信息
专利号:US-2024416323-A1
优先权日:2023-06-15
标题:Ruthenium catalysts for low-temperature and low-pressure ammonia synthesis
发明人：DRUMMOND SAMUEL; LAUTERBACH JOCHEN; NAGLIC JENNIFER
权利人:UNIV SOUTH CAROLINA
摘要:A catalyst including ruthenium, a promoter metal, and a second metal, optionally disposed on a support, and methods of using the catalyst to catalyze the formation of ammonia.
专利号:EP-3190083-B1
优先权日:2010-10-27
标 题 :Synthesis, capping and dispersion of nanocrystals
专利号:US-2015203989-A1
优先权日:2010-04-23
标题:Synthesis, capping and dispersion of nanocrystals
专利号:CN-118562114-A
优先权日:2024-05-06
标题:A continuous synthesis method and production system of high-viscosity PBS/PBAT-based biodegradable polyester
专利号:CN-118702653-A
优先权日:2024-06-06
标题:Continuous synthesis method and system of furandicarboxylic acid glycol ester
专利号:WO-2012058271-A2
优先权日:2010-10-27
标 题 :Synthesis, capping and dispersion of nanocrystals
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📌 第三方产品分析报告
合成参考文献
参考文献:10.1134/s1070427222080122
摘要:Kostyleva EI, Novikov AN, Ilyina TA, Dedov NA, Shchukina IA. Heat-Resistant Polyorganosiloxane Dielectrics. Russ J Appl Chem. 2022 Aug;95(8):1169–73. doi: 10.1134/s1070427222080122.
参考文献:10.1007/s10854-024-12312-1
摘要:Tang J, Liu GQ, Zhang R, Lei L, Zhang SN, Jin LH. Epitaxial growth and high critical current density of BHO-doped YBCO/STO composite films. J Mater Sci: Mater Electron. 2024 Mar;35(8). doi: 10.1007/s10854-024-12312-1.
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