专利号:US-10260154-B2 优先权日:2015-08-01 标 题:Method for the synthesis of layered luminescent transition metal dichalcogenide quantum dots 发明人:MANIKOTH SHAIJUMON MANCHERI; DAMIEN DIJO; Gopalakrishnan Deepesh 权利人:INDIAN INSTITUTE OF SCIENCE EDUCATION AND RES THIRUVANANTHAPURAM IISER TVM 摘要:The invention discloses a method for the synthesis of monodispersed luminescent quantum dots of transition metal dichalcogenides (TMDC), single- or few-layered, using a single-step electrochemical exfoliation that involves dilute ionic liquid and water. The method disclosed helps to obtain nanoclusters of TMDC of desired size including small sizes ranging up to 6 nm, by varying the concentration of the electrolyte and the applied DC voltage. The invention further discloses a method by which mono- or few-layered luminescent transition metal dichalcogenides can be directly deposited onto conducting substrates in a uniform manner. The monodispersed single- or few-layered luminescent TMDC and electro-deposited substrates exhibit improved electronic conductivity and new active sites, making them suitable as high-performance electrocatalysts in hydrogen evolution reactions in solar water-splitting applications and also as electrodes for solar cell applications.
专利号:US-2023174386-A1 优先权日:2020-05-07 标 题 :Scalable synthesis of semi-conducting chevrel phase compounds via selfpropagating high temperature synthesis 发明人:GOUMA PELAGIA-IREN; PAWAR MILIND MANSING 权利人:OHIO STATE INNOVATION FOUNDATION 摘要:Methods for the scalable and systematic synthesis of semiconducting Chevrel phase compounds via self-propagating high temperature synthesis (SHS) are provided. The provided methods utilize elemental precursors not utilized by typical synthesis methods. The precursors may include molybdenum (Mo), molybdenum disulfide (MoS 2 ), and a ternary cation. In various aspects, the ternary cation may be copper (Cu), iron (Fe), or nickel (Ni). The utilization of the provided precursors and SHS decreases the time it takes to synthesize Chevrel phase compounds as compared to typical heat treatment methods.
专利号:US-2024263349-A1 优先权日:2023-02-02 标 题 :Phase-controllable synthesis of transition metal dichalcogenide monolayer crystals 发明人:ZHANG HUA; ZHAI WEI; WANG YONGJI 权利人:UNIV CITY HONG KONG 摘要:The present invention provides a general salt-assisted chemical vapour deposition method for phase-controllable synthesis of 1T′ and 2H-phase transition metal dichalcogenide (TMD) monolayer crystals. The method comprises: mixing a transition metal compound powder and a salt powder to form a precursor; placing a substrate on top of the precursor; placing the precursor and the substrate at a center position in a chemical vapour deposition (CVD) furnace; placing a chalcogen powder at an upstream position relative to the precursor along a gas-flow direction in the CVD furnace; heating up the CVD furnace to a growth temperature within the heat-up time; keeping the CVD furnace at the growth temperature for a growth time under a mixed gas flow of H2 and Ar. The optical and electrical characterizations reveal the phase-dependent in-plane isotropy and anisotropy of the as-synthesized 2H and 1T′-phase crystals. The 1T′-TMD monolayer crystals demonstrate much-improved phase transition temperatures.
专利号:US-2023279562-A1 优先权日:2021-12-30 标题 :Process for the Electrochemical Synthesis of Ammonia (NH3) and the Ammonia Produced Thereby 发明人:GHORAI UTTAM KUMAR; PAUL SOURAV; ADALDER ASHADUL; SARKAR SOUGATA 权利人:GHORAI UTTAM KUMAR; RAMAKRISHNA MISSION VIDYAMANDIRA 摘要:This invention relates to a process for the electrochemical synthesis of ammonia (NH3) and the ammonia produced thereby. Ammonia is synthesized by the electrochemical reduction of nitrogenous materials such as nitrogen or nitrates (NO3-) using metal phthalocyanine such as iron phthalocyanine (FePc) or β-cobalt phthalocyanine (CoPc) or iron phthalocyanine-molybdenum disulfide (FePc-MoS2) or cobalt phthalocyanine- carbon nitride (CoPc-C3N4) catalyst at very low pressure and room temperature by applying low potential.
专利号:US-9640391-B2 优先权日:2015-06-23 标 题:Direct and pre-patterned synthesis of two-dimensional heterostructures 发明人:YANG EUI-HYEOK; KANG KYUNG NAM 权利人:THE TRUSTEES OF THE STEVENS INST OF TECH 摘要:A method for growing a transition metal dichalcogenide on a substrate, the method including providing a growth substrate having a first side and a second side opposite the first side; providing a source substrate having a first side and a second side opposite the first side; depositing a transition metal oxide on at least a portion of the first side of the source substrate; combining the growth substrate with the source substrate such that the first side of the growth substrate contacts the transition metal oxide, the combining producing a substrate stack; exposing the substrate stack to a chalcogenide gas, whereby the transition metal oxide reacts with the chalcogenide gas to produce a layer of a transition metal dichalcogenide on at least a portion of the first side of the growth substrate; and removing the source substrate from the growth substrate having the layer of the transition metal dichalcogenide thereon.
专利号:US-9527062-B2 优先权日:2013-05-09 标 题 :Process for scalable synthesis of molybdenum disulfide monolayer and few-layer films 发明人:IEZZI BRIAN C; LI YANPENG; CAO LINYOU; YU YIFEI 权利人:UNIV NORTH CAROLINA STATE 摘要:The present disclosure relates to nanosheet synthesis. More particularly, the present disclosure relates to molybdenum sulfide (MoS 2 ) atomic thin films and hydrogen evolution reactions. In one or more embodiments, a synthesis process may include sublimation of sulfur and MoCl 5 , reaction of MoCl 5 and S to produce gaseous MoS 2 species, transfer of the MoS 2 species by carrier gas, diffusion of MoS 2 species from the gas phase onto receiving substrates, and precipitation of MoS 2 on the substrates.
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