CAS: 1586-73-8; Tris(Trimethylsilyl)Amine

相似化合物

15933-59-2 21331-86-2 1586-72-7

上下游产品

chloro-trimethyl-silane lithium hexamethyldisilazane bis(trimethylsilyl)carbodi-imide tetrahydrofuranN-(Difluorphosphoryl)bis(trimethyl)silylamin N'-tosyl-N-(trimethylsilyl)sulfur diimide N,N'-bis(trimethylsilyl)sulfurdiimide 1,1-diphenyl-2,2,2-trifluoroethanol

📜甲基三氯硅烷置于氯化氮,三(二甲胺基)膦体系中,用 乙醚,甲苯 用作溶剂,化学反应 0.5H,以40%的收率获得三(三甲基硅)胺
参考文献:Shaposhnikov,S. I.; Koidan,G. N.; Marchenko,A. P.,Journal Of General Chemistry Of The Ussr,1985,Vol. 55,# 5,P. 963-966
标题:Shaposhnikov,S. I.; Koidan,G. N.; Marchenko,A. P.,Journal Of General Chemistry Of The Ussr,1985,Vol. 55,# 5,P. 963-966

专利信息

专利号:US-7615169-B2
优先权日:2004-09-20
标题 :Method for synthesis of colloidal nanoparticles
发明人：STROUSE GEOFFREY FIELDING; GERBEC JEFFREY A; MAGANA DONNY
权利人:UNIV CALIFORNIA
摘要:A method for synthesis of high quality colloidal nanoparticles using comprises a high heating rate process. Irradiation of single mode, high power, microwave is a particularly well suited technique to realize high quality semiconductor nanoparticles. The use of microwave radiation effectively automates the synthesis, and more importantly, permits the use of a continuous flow microwave reactor for commercial preparation of the high quality colloidal nanoparticles.

专利号:US-7927516-B2
优先权日:2004-09-20
标题 :Method for synthesis of colloidal nanoparticles
发明人：STROUSE GEOFFREY F; GERBEC JEFFREY A; MAGANA DONNY
权利人:UNIV CALIFORNIA
摘要:A method for synthesis of high quality colloidal nanoparticles using comprises a high heating rate process. Irradiation of single mode, high power, microwave is a particularly well suited technique to realize high quality semiconductor nanoparticles. The use of microwave radiation effectively automates the synthesis, and more importantly, permits the use of a continuous flow microwave reactor for commercial preparation of the high quality colloidal nanoparticles.

专利号:US-9944532-B2
优先权日:2013-10-22
标 题 :Solid source and method for the synthesis of silicon-containing precursors for chemical vapor deposition
发明人：SCARLETE MIHAI; AKTIK CETIN
权利人:SOCPRA SCIENCE ET GENIE S E C; UNIV DE BISHOP; SOCPRA SCIENCE ET GENIE S E C
摘要:The present document described a solid source and a method for synthesis of silicon-containing precursors for chemical vapor deposition. The solid source comprises a solid polysilane; an energy coupling agent distributed in the solid polysilane; and hydrogen, mixed with the solid polysilane and the energy coupling agent distributed in the solid polysilane, in a necessary amount to satisfy a hydrogen deficiency during a hydrogenolysis reaction.

专利号:US-2025197431-A1
优先权日:2023-12-15
标 题:Methods and systems for forming a layer comprising silicon and composition and synthesis of silicon precursor
发明人：ROMERO PATRICIO EDUARDO; VERVUURT RENÉ HENRICUS JOZEF; DEZELAH CHARLES; PORE VILJAMI J
权利人:ASM IP HOLDING BV
摘要:Disclosed are methods and systems for forming a silicon-containing layer on a substrate. Further disclosed are composition and synthesis of silicon-containing precursor. The methods for forming a silicon-containing layer comprise executing a plurality of deposition cycles. A deposition cycle comprises a first precursor pulse that comprises exposing the substrate to a first precursor. The first precursor comprises a molecule comprising a P—Si bond. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.

专利号:EP-0364340-B1
优先权日:1988-10-05
标题:Method for the synthesis of sulfonyl imides
摘要:Method for the synthesis of sulfonylimidides having the formula M((RSO2)2N)y, whrein M is a metal or an ammonium radical quaternary or not, the Rs, which may be identical or similar are organic monovalent radicals, particularly hydrocarbyles and preferably perfluorohydrocarbyles, in C1 to C12, and y is the valence of M. On the one hand, a silazane component selected amongst the silazane compounds M(((R2)3Si)2N)y or the associations of a silazane derivative A((R2)3Si)2N or a fluoride M1Fz of low cross-linking energy is reacted with, on the other hand, at least one sulfonic halogenite component consisting of a sulfonyl fluoride RSO2F or in the association of a sulfonyl chloride RSO2Cl with a fluoride M1Fz, M, R and y having the above-mentionned significations, M1 being selected amongst the Ms and being optionally identical to M, z being the valence of M1 and R2 representing an alkyl in C1 to C4. The imidides obtained for which the R2 are perfluorated radicals and M is an alkaline metal such as Li are usable in association with polyethers for the production of materials of the ionic conduction type for all solid generators in thin films.

专利号:US-5256821-A
优先权日:1988-10-05
标题:Method of synthesis of sulphonylimides
发明人：ARMAND MICHEL B
权利人:ELF AQUITAINE; HYDRO QUEBEC
摘要:Method for the synthesis of sulfonylimidides having the formula M((RSO 2 ) 2 N) y , wherein M is a metal or an ammonium radical quaternary or not, the Rs, which may be identical or similar are organic monovalent radicals, particularly hydrocarbyles and preferably perfluorohydrocarbyles, in C 1 to C 12 , and y is the valence of M. On the one hand, silazane component selected amongst the silazane compounds M(((R 2 ) 3 Si) 2 N) y or the associations of a silazane derivative A((R 2 ) 3 Si) 2 N or a fluoride M 1 F z of low cross-linking energy is reacted with, on the other hand, at least one sulfonic halogenite component consisting of a sulfonyl fluoride RSO 2 F or in the association of a sulfonyl chloride RSO 2 Cl with a fluoride M 1 F z , M, R and y having the above-mentioned significations, M being selected amongst the Ms and being optionally identical to M, z being the valence of M 1 and R 2 representing an alkyl in C 1 to C 4 . The imidides obtained for which the R 2 are perfluorated radicals and M is an alkaline metal such as Li are usable in association with polyethers for the production of materials of the ionic conduction type for all solid generators in thin films.