CAS: 1304-76-3; Bismuth Trioxide

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CAS号7440-69-9 铋 | CAS号7787-63-5 碘化铋(III) | CAS号7787-59-9 氯氧化铋 | CAS号7787-64-6 碘化铋 | CAS号80937-33-3 oxygen | CAS号13520-72-4 bismuth oxyfluoride | CAS号33397-22-7 tri(naphthalen-... | CAS号14866-68-3 氯酸离子 | CAS号7440-69-9 铋 | CAS号7429-90-5 铝片 | CAS号603-33-8 三苯基铋 | CAS号7787-60-2 氯化铋 | CAS号7782-49-2 硒 | CAS号7791-23-3 氧氯化硒 | CAS号7446-09-5 二氧化硫 | CAS号7704-34-9 硫磺 | CAS号124-38-9 二氧化碳 | CAS号7732-18-5 水

专利信息

专利号:WO-2006067109-A1
优先权日:2004-12-22
标 题 :Process for the mechanochemical synthesis of metal carboxylate
发明人：ROBIN JEAN-JACQUES; TIFFES DOMINIQUE; HANNECART ETIENNE
权利人:SOLVAY; ROBIN JEAN-JACQUES; TIFFES DOMINIQUE; HANNECART ETIENNE
摘要:Process for the mechanochemical synthesis of metal carboxylate Process for the mechanochemical synthesis of metal carboxylate, according to which, in a first stage, a mixture (M) comprising at least one acidic substance (A) selected from carboxylic acids and carboxylic acid anhydrides, at least one basic inorganic metal compound (B), water (C) and at least one third solid body (D) which is chemically inert with regard to the components (A), (B) and (C) and the metal carboxylate is formed and, in a second stage, the abovesaid mixture (M) is subjected to a mechanical stress sufficient to bring about a mechanochemical reaction between the acidic substance (A) and the basic inorganic metal compound (B).

专利号:US-7767627-B1
优先权日:1994-10-18
标 题:Combinatorial synthesis of inorganic or composite materials
发明人：GOLDWASSER ISY; ROSS DEBRA A; SCHULTZ PETER G; XIANG XIAO-DONG; BRICENO GABRIEL; SUN XIAO-DONG; WANG KAI-AN
权利人:SYMYX SOLUTIONS INC; UNIV CALIFORNIA
摘要:Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to predefined regions on a substrate, and simultaneously reacting the components to form at least two materials or, alternatively, allowing the components to interact to form at least two different materials. Materials which can be prepared using the methods and apparatus of the present invention include, for example, covalent network solids, ionic solids and molecular solids. More particularly, materials which can be prepared using the methods and apparatus of the present invention include, for example, inorganic materials, intermetallic materials, metal alloys, ceramic materials, organic materials, organometallic materials, nonbiological organic polymers, composite materials (e.g., inorganic composites, organic composites, or combinations thereof), etc. Once prepared, these materials can be screened for useful properties including, for example, electrical, thermal, mechanical, morphological, optical, magnetic, chemical, or other properties. Thus, the present invention provides methods for the parallel synthesis and analysis of novel materials having useful properties.

专利号:US-2023322661-A1
优先权日:2020-08-21
标题 :Synthesis of N,N-Branched Sulfamoyl Fluoride Compounds Using Bismuth Trifluoride
发明人：SINGH RAJENDRA P; HU QICHAO; SHEIMAN JOHNATHAN
权利人:SES HOLDINGS PTE LTD
摘要:Methods of producing N,N-branched sulfamoyl fluoride compounds of the formula F-S(O) 2 -NR 2 by contacting bismuth trifluoride with an N,N-branched sulfamoyl nonfluorohalide compound of the formula X-SO 2 NR 2 , wherein X=chlorine (Cl), bromine (Br), or iodine (I), and each R is, independently, a linear or branched alkyl, fluoroalkyl, alkenyl, fluoroalkenyl, alkynyl, or fluoroalkynyl with 1 to 12 carbon atoms, to fluorinate the N,N-branched sulfamoyl nonfluorohalide compound. This is a non-aqueous method, the purity of product is very high, and the desired product can be isolated in quantitative yield. The N,N-branched sulfamoyl fluoride compounds so produced are useful in various applications including as electrolyte solvents and additives in electrochemical devices, such as lithium batteries and capacitors, and in biological fields, among others.

专利号:US-8377406-B1
优先权日:2012-08-29
标 题 :Synthesis of bis(fluorosulfonyl)imide
发明人：SINGH RAJENDRA P; MARTIN JERRY LYNN; POSHUSTA JOSEPH CARL
权利人:BOULDER IONICS CORP; SINGH RAJENDRA P; MARTIN JERRY LYNN; POSHUSTA JOSEPH CARL
摘要:The present invention provides methods for producing bis(fluorosulfonyl) compounds of the formula:n nF—S(O) 2 —Z—S(O) 2 —F  In nby contacting a nonfluorohalide compound of the formula:n nX—S(O) 2 —Z—S(O) 2 —Xn nwith bismuth trifluoride under conditions sufficient to produce the bis(fluorosulfonyl) compound of Formula I, where Z and X are those defined herein.

专利号:US-12437933-B2
优先权日:2022-03-02
标 题 :Controlled heating rate baking protocol for the synthesis of bismuth vanadate thin films
发明人：ZHANG RUIQIN; RASOOL RAFIQAT UI
权利人:UNIV CITY HONG KONG
摘要:A method for fabricating a film on a substrate and a method for controlling the heating rate of a plurality of nanoparticles to transform the plurality of nanoparticles into a plurality of nanorods and nano-cone structures includes the steps of providing a sol precursor, providing a substrate, depositing the sol precursor onto the substrate via a sol-gel technique, annealing the sol precursor under ambient pressure at a controlled heating rate, and cooling down the sol precursor to form a film.

专利号:US-2013015391-A1
优先权日:2009-09-18
标 题:Method for the preparation at low temperatures of ferroelectric thin films, the ferroelectric thin films thus obtained and their applications
发明人：LOUSADA SILVEIRINHA VILARINHO PAULA MARIA; WU AIYING; CALZADA MARIA LOURDES; JIMENEZ RIOBOO RICARDO; BRETOS IGNOS
权利人:CONSEJO SUPERIOR DE INVERSITACIONES CIENTIFICAS; UNIV AVERIRO; LOUSADA SILVEIRINHA VILARINHO PAULA MARIA; WU AIYING; CALZADA MARIA LOURDES; JIMENEZ RIOBOO RICARDO; BRETOS IGNOS
摘要:A processing technology is for the fabrication at low temperatures of ferroelectric crystalline oxide thin films, among others PbZr x Ti 1-x O 3 (PZT) (<400° C. for PZT) with ferroelectric properties appropriate for integration in devices. The method is also for the fabrication of ferroelectric thin films of bronze tungsten (A 2 B 2 O 6 ), perovskite (ABO 3 ), pyrochlore (A 2 B 2 O 7 ) and bismuth-layer (Bi 4 Ti 3 O 12 ) structures, in which A and B are mono, bi-, tri-, tetra- and pentavalent ions. The method is based on the combination of Seeded Diphasic Sol Gel (SDSG) precursors with Photo Chemical Solution Deposition (PCSD) methodology and comprises the main following steps: i) synthesis of a modified metal-organic precursor solution of the desired metal oxide composition with a large photo-sensitivity in the UV wavelength range; ii) preparation by a sol gel process of nanoparticles of the desired composition, similar or dissimilar to the crystalline compound to be obtained from the previous precursor sol; iii) dispersion of the crystalline nanoparticles in the precursor sol to prepare a stable and homogeneous sol-gel based suspension; iv) deposition of the previous suspension onto substrates; v) UV irradiation in air or oxygen of the deposited layer and further thermal treatment in air or oxygen of the irradiated layer at temperatures below 400° C. The method provides for the fabrication of polycrystalline ferroelectric, piezoelectric, pyroelectric and dielectric thin films, dense and without cracks with thickness above 50 nm and below 800 nm on single crystal, polycrystalline, amorphous, metallic and polymeric substrates at low temperatures and with optimised properties, being applicable in microelectronics and optics industries.