CAS: 13464-82-9; Indium(Iii) Sulfate

专利信息

专利号:WO-2014152883-A1
优先权日:2013-03-14
标 题 :Method for synthesis of sub 100-nm indium nanoparticles
发明人：KRAMER THEODORE J
权利人:LIQUID LIGHT INC
摘要:The present disclosure generally relates to a method for the synthesis and production of indium nanoparticles. More particularly, disclosed is a method of making indium nanoparticles in a nonpolar solvent. The indium nanopatl icles are prepared by reducing an indium fatty acid carboxylate in the presence of a surfactant. Indium is a useful electrocatalyst and electrode material for performing certain electrochemical reactions. Because electrochemical reactions generally occur on the electrode surface, a high surface area of electrode material, or material coated on an electrode is desirable. One way to achieve high surface area is to use a coating of small particles such as nanoparticles.

专利号:US-9577149-B2
优先权日:2011-12-01
标 题:Continuous synthesis of high quantum yield InP/ZnS nanocrystals
发明人：LU HUACHANG; HOHEISEL WERNER; MLECZKO LESLAW; NOWAK STEPHAN
权利人:QUANTUM MAT CORP
摘要:The invention relates to a continuous-flow synthesis process for the preparation of high quality indium phosphide/zinc sulfide core/shell semiconduting nanocrystals in particular quantum dots (QD) conducted in a micro-reaction system comprising at least one mixing chamber connected to one reaction chamber.

专利号:US-2024352312-A1
优先权日:2021-06-25
标题:Microemulsion template assisted synthesis of cadmium-free near-infrared quantum dots based on i-iii-vi ternary semiconductors
发明人：WANG JUN
权利人:QUANTUM TECH GROUP
摘要:A method for making ternary core-shell semiconductor nanoparticles includes providing an emulsion including droplets dispersed in a continuous phase of a non-polar solvent. The droplets include a solution of ions of a Group I element and ions of a Group III element in a polar solvent, and are encapsulated by an interfacially active material. The emulsion is exposed to ions of a Group VI element to cause a reaction, thereby forming nanoparticles in the droplets. The nanoparticles in the droplets are with a first precursor to grow a shell on the nanoparticles, thereby forming core-shell nanoparticles. The core-shell nanoparticles are extracted from the emulsion; thermally annealed; and reacted with a second precursor to further grow the shell on the nanoparticles, thereby forming ternary core-shell semiconductor nanoparticles.

专利号:WO-2024147019-A1
优先权日:2023-01-05
标题 :Scalable synthesis of iii-v nanocrystals
发明人：MEHTA JOSHUA; CHILUKA LAXMI KISHORE SAGAR
权利人:QUANTUM SCIENCE LTD
摘要:The present invention provides a scalable method for producing indium pnictogenide nanocrystals comprising forming a mixture comprising an indium-containing compound, a pnictogen precursor composition, a plurality of ligands and a non-polar solvent; heating the mixture from a first temperature to a second temperature in the range of 160 °C to 350 °C; and maintaining the mixture at the second temperature for a first predetermined length of time in the range of 1 second to 180 minutes.

专利号:WO-2012163976-A1
优先权日:2011-06-03
标题:Continuous process for the synthesis of ternary or quaternary semiconducting nanoparticles based on ib, iiia, via elements of the periodic classification
发明人：RAUSCHER FRANK; FU MIN; MLECZKO LESLAW; HOHEISEL WERNER
权利人:BAYER IP GMBH; RAUSCHER FRANK; FU MIN; MLECZKO LESLAW; HOHEISEL WERNER
摘要:A process for the continuous production of ternary or quaternary semiconducting nanoparticles based on IB, IIIA, VIA elements of the periodic classification, in particular low-toxic AglnS2; and CuInS2 in the liquid phase is described. A uniform size of semiconducting nanoparticles is obtained in a size range from 1 nm to 20 nm, showing chalcopyrite or wurzite crystal structure. The size and crystal structure of the semiconducting nanoparticle can be controlled by adjusting reaction parameters in particular concentration, temperature, flow and selected ligands.

专利号:US-5747180-A
优先权日:1995-05-19
标题 :Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
发明人：MILLER ALBERT E; BANDYOPADHYAY SUPRIYO
权利人:UNIV NOTRE DAME DU LAC
摘要:A method of fabricating two-dimensional regimented and quasi periodic arrays of metallic and semiconductor nanostructures (quantum dots) with diameters of Ëœ100 â„«(10 nm) includes the steps of polishing and anodizing a substrate to form a regimented quasi-periodic array of nanopits. The array forms a template for metallic or semiconductor material. The desired material is deposited in the nanopits by immersing the substrate in an appropriate solution and using the substrate as one cathode and inserting a second cathode in the solution.