CAS: 10433-06-4; Triethyl Stibenite

专利信息

专利号:US-8765223-B2
优先权日:2008-05-08
标题 :Binary and ternary metal chalcogenide materials and method of making and using same
发明人：XIAO MANCHAO; YANG LIU
权利人:XIAO MANCHAO; YANG LIU; AIR PROD & CHEM
摘要:This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

专利号:US-9828674-B2
优先权日:2009-10-26
标题 :Synthesis and use of precursors for ALD of group VA element containing thin films
发明人：PORE VILJAMI; HATANPÄÄ TIMO; RITALA MIKKO; LESKELÄ MARKKU
权利人:ASM IP HOLDING BV
摘要:Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR 1 R 2 R 3 ) 3 are preferably used, wherein R 1 , R 2 , and R 3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

专利号:US-11542600-B2
优先权日:2009-10-26
标题 :Synthesis and use of precursors for ALD of group VA element containing thin films

专利号:US-2012329208-A1
优先权日:2009-10-26
标题:Synthesis and use of precursors for ald of group va element containing thin films

专利号:WO-2011056519-A2
优先权日:2009-10-26
标 题:Synthesis and use of precursors for ald of group va element containing thin films

专利号:US-10208379-B2
优先权日:2009-10-26
标题:Synthesis and use of precursors for ALD of group VA element containing thin films