CAS: 4404-45-9; Hexylisothiocyanate

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📜O-Phenyl Hexylcarbamothioate置于sodium Hydroxide体系中,用 二氯甲烷 作为反应溶剂,化学反应 1.0H,以98%的收率获得产物异硫氰酸己酯
参考文献:通过一锅法或两步法通过胺与氯邻苯二甲酸酯反应来合成异硫氰酸酯
标题:通过一锅法或两步法通过胺与氯邻苯二甲酸酯反应来合成异硫氰酸酯
摘要:摘要 描述了一种由胺容易且有效地合成异硫氰酸酯的方法.该方法涉及通过一锅法或两步法在固体氢氧化钠存在下使胺与氯代硫代甲酸苯酯反应.一锅法可用于制备烷基和电子富集的芳基异硫氰酸酯,而两步法则更具通用性,不仅对烷基和电子富集的芳基异硫氰酸酯,而且对于高度缺电子的芳基和芳烃都非常有效.杂环异硫氰酸酯. 描述了一种由胺容易且有效地合成异硫氰酸酯的方法.该方法涉及通过一锅法或两步法在固体氢氧化钠存在下使胺与氯代硫代甲酸苯酯反应.一锅法可用于制备烷基和电子富集的芳基异硫氰酸酯,而两步法则更具通用性,不仅对烷基和电子富集的芳基异硫氰酸酯,而且对于高度缺电子的芳基和芳烃都非常有效.杂环异硫氰酸酯.
DOI:10.1055/s-0033-1338744

专利信息

专利号:US-2023109627-A1
优先权日:2019-11-14
标 题:Precursor chemistry for quantum dot synthesis enabling temperature-independent modulation of reactivity
发明人：HAN HEE-SUN; PARK JOONHYUCK
权利人:UNIV ILLINOIS
摘要:Provided herein are methods of making a high-quality quantum dot (QD), including by providing anion precursor chemistry that enables chemical modulation of precursor reactivity, thereby, allowing independent optimization of reaction temperature and precursor reactivity to systematically grow high quality QDs and by providing specially configured tunable precursors and related chemistry to facilitate separate reaction pathways for nucleation and growth, thereby accessing heat-up based synthesis of high-quality QD, including core-shell QDs. The methods may include providing a base-QD and a first anion or cation precursor having a composition comprising an anion or a cation element, respectively, and a modification agent. At least one add-layer is grown on the base-QD at a growth temperature, thereby making the high-quality QD comprising the base-QD and the at least one add-layer. At least one add-layer may have a composition comprising an add-layer cation element and an add-layer anion element.

专利号:EP-1892237-A1
优先权日:2004-01-28
标 题 :Vinylchloroformate-free synthesis of vinyl and allyl(thio)carbamates
发明人：SEELYE DAVID E; KUNZLER JAY F; SALAMONE JOSEPH C
权利人:BAUSCH & LOMB
摘要:The invention generally relates to methods of forming allyl(thio)carbamates and more particularly to a method of synthesizing allyl(thio)carbamates that does not necessitate the use of phosgene and organomercury intermediates.

专利号:US-7402689-B2
优先权日:2004-01-28
标 题 :Vinylchloroformate-free synthesis of vinyl and allyl(thio) carbamates
发明人：SEELYE DAVID E; KUNZLER JAY F; SALAMONE JOSEPH C
权利人:BAUSCH & LOMB
摘要:The invention generally relates to methods of forming vinyl(thio)carbamates and more particularly to a vinylchloroformate-free method of synthesizing (N-vinyloxycarbonyl)-3-aminopropyltris(trimethylsiloxysilane).

专利号:WO-2005073181-A1
优先权日:2004-01-28
标 题:Vinylchloroformate-free synthesis of vinyl and allyl(thio)carbamates

专利号:US-2005176980-A1
优先权日:2004-01-28
标题 :Vinylchloroformate-free synthesis of vinyl and allyl(thio) carbamates

专利号:EP-1708989-A1
优先权日:2004-01-28
标题 :Vinylchloroformate-free synthesis of vinyl and allyl(thio)carbamates