CAS: 12067-46-8; Tungsten Diselenide

上下游产品

selenium tungsten selenourea selenium dimer

📜四氯化硒 反应生成二硒化钨
参考文献:Agarwal,M. K.;Rao,V. V.,Bull. Electrochem,5,(1989) N0,C. 767-769
标题:Agarwal,M. K.;Rao,V. V.,Bull. Electrochem,5,(1989) N0,C. 767-769

专利信息

专利号:US-2024263349-A1
优先权日:2023-02-02
标 题 :Phase-controllable synthesis of transition metal dichalcogenide monolayer crystals
发明人：ZHANG HUA; ZHAI WEI; WANG YONGJI
权利人:UNIV CITY HONG KONG
摘要:The present invention provides a general salt-assisted chemical vapour deposition method for phase-controllable synthesis of 1T′ and 2H-phase transition metal dichalcogenide (TMD) monolayer crystals. The method comprises: mixing a transition metal compound powder and a salt powder to form a precursor; placing a substrate on top of the precursor; placing the precursor and the substrate at a center position in a chemical vapour deposition (CVD) furnace; placing a chalcogen powder at an upstream position relative to the precursor along a gas-flow direction in the CVD furnace; heating up the CVD furnace to a growth temperature within the heat-up time; keeping the CVD furnace at the growth temperature for a growth time under a mixed gas flow of H2 and Ar. The optical and electrical characterizations reveal the phase-dependent in-plane isotropy and anisotropy of the as-synthesized 2H and 1T′-phase crystals. The 1T′-TMD monolayer crystals demonstrate much-improved phase transition temperatures.

专利号:US-2023279562-A1
优先权日:2021-12-30
标题 :Process for the Electrochemical Synthesis of Ammonia (NH3) and the Ammonia Produced Thereby
发明人：GHORAI UTTAM KUMAR; PAUL SOURAV; ADALDER ASHADUL; SARKAR SOUGATA
权利人:GHORAI UTTAM KUMAR; RAMAKRISHNA MISSION VIDYAMANDIRA
摘要:This invention relates to a process for the electrochemical synthesis of ammonia (NH3) and the ammonia produced thereby. Ammonia is synthesized by the electrochemical reduction of nitrogenous materials such as nitrogen or nitrates (NO3-) using metal phthalocyanine such as iron phthalocyanine (FePc) or β-cobalt phthalocyanine (CoPc) or iron phthalocyanine-molybdenum disulfide (FePc-MoS2) or cobalt phthalocyanine- carbon nitride (CoPc-C3N4) catalyst at very low pressure and room temperature by applying low potential.

专利号:US-9640391-B2
优先权日:2015-06-23
标 题:Direct and pre-patterned synthesis of two-dimensional heterostructures
发明人：YANG EUI-HYEOK; KANG KYUNG NAM
权利人:THE TRUSTEES OF THE STEVENS INST OF TECH
摘要:A method for growing a transition metal dichalcogenide on a substrate, the method including providing a growth substrate having a first side and a second side opposite the first side; providing a source substrate having a first side and a second side opposite the first side; depositing a transition metal oxide on at least a portion of the first side of the source substrate; combining the growth substrate with the source substrate such that the first side of the growth substrate contacts the transition metal oxide, the combining producing a substrate stack; exposing the substrate stack to a chalcogenide gas, whereby the transition metal oxide reacts with the chalcogenide gas to produce a layer of a transition metal dichalcogenide on at least a portion of the first side of the growth substrate; and removing the source substrate from the growth substrate having the layer of the transition metal dichalcogenide thereon.

专利号:US-10128109-B2
优先权日:2015-07-09
标 题 :Method for synthesis of two-dimensional dichalcogenide semiconductors
发明人：CANNARA RACHEL; MULLEN EMMA RAE; SHARIFI FRED
权利人:ELWHA LLC
摘要:The present disclosure relates to methods of making a transition metal dichalcogenide. The methods can include a step of depositing a transition metal onto a substrate to form an epitaxial transition metal layer. The methods can also include a step of depositing a chalcogen onto the epitaxial transition metal layer, and a step of reacting the chalcogen with the epitaxial transition metal layer to form a transition metal dichalcogenide. In some instances, the chalcogen is reacted with the epitaxial transition metal layer at a temperature of between about 300° C. and 600° C., between about 300° C. and 550° C., between about 300° C. and 500° C., between about 300° C. and 450° C., or between about 300° C. and 400° C.

专利号:US-8062756-B2
优先权日:2005-08-26
标题:Stepwise growth of oligomeric redox-active molecules on a surface without the use of protecting groups
发明人：BOCIAN DAVID F; LINDSEY JONATHAN S; JIAO JIEYING
权利人:BOCIAN DAVID F; LINDSEY JONATHAN S; JIAO JIEYING; REGENTS OFT THE UNIVERSITY OF CALIFORNIA; UNIV NORTH CAROLINA STATE
摘要:This invention provides a procedure for growing oligomers via a stepwise process. The oligomers can include porphyrins, which have been previously shown to be attractive candidates for molecular-based information storage. The stepwise synthesis procedure requires no protecting groups, thus eliminating protection/deprotection reactions that add complexity to the process.

专利号:US-10065154-B2
优先权日:2012-10-05
标 题 :Nanofluidic sorting system for gene synthesis and pcr reaction products
发明人：AGUILAR CARLOS ANDRES; JAIN TARUN KUMAR; KARNIK ROHIT N; CARR PETER A
权利人:MASSACHUSETTS INST TECHNOLOGY
摘要:Devices and methods integrate nanopore and microfluidic technologies for recording molecular characteristics of individual molecules such as, for example, biomolecules. Devices comprise a first substrate comprising a microchannel, a second substrate comprising a microchannel, the second substrate positioned below the first substrate, and a membrane having a thickness of about 0.3 nm to about 1 nm and comprising at least one nanopore, the membrane positioned between the first substrate and the second substrate, wherein a single nanopore of the membrane is constructed and arranged for electrical and fluid communication between the microchannel of the first substrate and the microchannel of the second substrate. To mitigate the effect of errors that occur during de novo DNA synthesis, longer DNA molecules are typically synthesized from shorter oligonucleotides by polymerase construction and amplification (PCA), or by other methods.