CAS: 134856-58-9; ((4-Iodophenyl)Ethynyl)Trimethylsilane

相似化合物

2170-06-1 78704-49-1 16116-78-2

上下游产品

1-[4-[2-(trimethylsilyl)ethynyl]phenyl]-3,3-diethyltriazene methyl iodide 4-trimethylsilylethynyl aniline para-diiodobenzene thioacetic acid S-[4-(4-trimethylsilanylethynylphenylethynyl)phenyl] ester 1-trimethylsilylethynyl-4-((4-aminophenyl)-ethynyl)benzene ((4-((trimethylsilyl)ethynyl)phenyl)-ethynyl)triisopropylsilane {[4-({4-[(triisopropylsilyl)ethynyl]phenyl}ethynyl)phenyl]ethynyl}trimethylsilane

📜对碘苯胺置于盐酸,Bis-Triphenylphosphine-Palladium(II) Chloride,Copper(L) Iodide,三乙胺,Potassium Iodide,Sodium Nitrite体系中,化学反应 18.75H,反应生成(4-碘苯基乙炔)三甲基硅烷
参考文献:棒状共轭聚炔的顺序催化合成
标题:棒状共轭聚炔的顺序催化合成
摘要:几个聚炔x-[c≡cc 6 ħ 4-] ñ C≡c-硅我镨3(x = H,森达3)具有受控的长度(n = 1,2,3,4)已经从制备通过基于pd / Cu催化的cc交叉偶联和选择性脱甲硅基反应的迭代和收敛方法,可轻松获得4-三甲基甲硅烷基乙炔基碘苯.
Doi:10.1016/0040-4020(96)00240-2

专利信息

专利号:US-RE49222-E
优先权日:2013-10-02
标题 :Fluorine-containing complex compound, and production method for fluorine-containing organic compound employing same
发明人：ADACHI KENJI; SHIBANUMA TAKASHI; NAGAI TAKABUMI; OGOSHI SENSUKE; OHASHI MASATO
权利人:DAIKIN IND LTD; UNIV OSAKA
摘要:An object of the present invention is to enable the synthesis of various fluorine-containing compounds having an organic group at both terminals of their tetrafluoroethylene structure (—CF 2 —CF 2 —). The present invention provides a fluorine-containing complex compound includingn a fluorine-containing organic metal compound represented by formula (1a):n nR 1 —CF 2 —CF 2 -M 1   (1a)n nwherein M 1 is a metal selected from the group consisting of copper, zinc, nickel, iron, cobalt, and tin; and R 1 represents an organic group, andn at least one ligand selected from the group consisting of pyridine ring-containing compounds and phosphines.

专利号:US-7518905-B2
优先权日:1999-07-01
标 题 :High density memory device
发明人：BOCIAN DAVID F; KUHR WERNER G; LINDSEY JONATHAN; CLAUSEN PETER CHRISTIAN; GRYKO DANIEL TOMASZ
权利人:UNIV CALIFORNIA; UNIV NORTH CAROLINA STATE
摘要:This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10 15 bits/cm 3 ), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.