CAS: 25324-56-5; Phosphanylidynetin

⚠️危险化学品目录(2015年版) 遇水放出易燃气体的物质和混合物,类别1
英文名称Phosphanylidynetin
中文名称磷化锡
IUPAC名称phosphanylidynetin
其它别名Tinphosphide (PSn) (6CI); Tin monophosphide
CAS编号25324-56-5
MFCD编号:MFCD00148954
EINECS号:246-848-7
分子式:P2Sn3分子量:418.08
产品CID: 1212906
产品分类无机化工 → 无机盐 → 磷化物,金属的磷酸,偏磷酸,次磷酸和焦磷酸盐

相似结构搜索
产品信息参考;;;
InChIKey: BSPSZRDIBCCYNN-UHFFFAOYSA-N
1S/P.Sn/q-3;+3
计算化学: 氢键受体数*氢键供体数0.0可旋转键数0.0

物理性质

熔点decomposes [AES93]
沸点decomposes [AES93]
闪点 °C
密度6.560
PSA:46.94
LogP:0.0446
敏感性如果遵照规格使用和储存则不会分解避免接触酸，水分/潮湿
外观形态无光泽金属固体
储存条件干性的保护气体下处置，保持贮藏器密封保存放入紧密的贮藏器内，储存在阴凉，干燥环境的地方

MSDS等安全信息

GHS符号GHS07
危险类别Excerpt from ERG Guide 139 [Substances - Water-Reactive (Emitting Flammable and Toxic Gases)]: | Highly toxic: contact with water produces toxic gas, may be fatal if inhaled. Inhalation or contact with vapors, substance or decomposition products may cause severe injury or death. May produce corrosive solutions on contact with water. Fire will produce irritating, corrosive and/or toxic gases. Runoff from fire control or dilution water may cause environmental contamination. (ERG, 2024) | · Highly toxic: contact with water produces toxic gas, may be fatal if inhaled. | · Inhalation or contact with vapors, substance or decomposition products may cause severe injury or death. | · May produce corrosive solutions on contact with water. | · Fire will produce irritating, corrosive and/or toxic gases. | · Runoff from fire control or dilution water may cause environmental contamination.
警示词Warning
危险描述H302-H332
防范说明P261-P264-P270-P301+P312a-P304+P340-P501a
危险等级6.1
UN编号1433.0
包装等级II

合成工艺路线路线简述

专利信息

专利号:CN-116790920-B
优先权日:2022-10-11
标题 :A melt quenching method for general synthesis of nanoporous metal compound materials doped with metal single atoms

专利号:CN-116790920-A
优先权日:2022-10-11
标题:Universal synthesis of single-atom doped nano porous metal compound material by melt quenching method

专利号:WO-2025060689-A1
优先权日:2023-09-22
标题:Indium phosphide crystal containing doped element, single crystal wafer, preparation method therefor and device
发明人：XIAO YADONG; ZHANG SHUHUI; SHI NING
权利人:BEIJING TONGMEI XTAL TECH CO LTD; CHAO YANG TONGMEI XTAL TECH CO LTD
摘要:The present invention relates to an indium phosphide crystal containing a doped element, a single crystal wafer and a preparation method therefor. Specifically, the invention relates to an indium phosphide crystal containing a doped element, the doped element being doped in an indium phosphide crystal growth melt or in an indium phosphide polycrystalline material synthesis, and the indium phosphide crystal being an S-doped or Sn-doped N-type indium phosphide single crystal, or a Zn-doped P-type indium phosphide single crystal; the doped element is one or more elements, and the segregation coefficient thereof in indium phosphide is not greater than 0.05; the content of the doped element in the indium phosphide crystal is 30 ppb to 30 ppm. The present invention also relates to a method for preparing an indium phosphide crystal containing a doped element, a method for preparing a single crystal wafer, and a device prepared using the indium phosphide single crystal. The indium phosphide single crystal obtained thereby has a high yield rate.