CAS: 368-47-8; Phenyltrifluorosilane

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CAS号98-13-5 苯基三氯硅烷 | CAS号694-53-1 苯硅烷 | CAS号7783-56-4 三氟化锑 | CAS号34136-85-1 1,1,1-trimethyl... | CAS号34224-10-7 PhSiF2-O-SiF2Ph | CAS号358-60-1 一氟三乙氧基硅烷 | CAS号92-93-3 4-硝基联苯 | CAS号21331-86-2 三(二甲基硅基)胺 | CAS号135764-61-3 N-chloro-N-(dim... | CAS号135764-62-4 1,1-dimethyl-3-... | CAS号20638-52-2 4-苯基四氢吡喃 | CAS号2046-18-6 4-苯基丁腈 | CAS号605-02-7 1-苯基萘 | CAS号603-36-1 三苯基锑 | CAS号7783-61-1 四氟化硅

📜苯硅烷置于potassium Fluoride,Copper(L) Iodide,Copper Dichloride体系中,用 四氢呋喃 作为反应溶剂,化学反应 168000.0H,以53%的收率获得产物苯基三氟硅烷
参考文献:Selective Synthesis Of Halosilanes From Hydrosilanes And Utilization For Organic Synthesis
标题:Selective Synthesis Of Halosilanes From Hydrosilanes And Utilization For Organic Synthesis
摘要:Selective Synthesis Of Halosilanes Has Been Examined. Various Types Of Halosilanes And Halohydrosilanes,Such As R3Six,R2Sihx,R2Six2,Rsih2X,Rsihx2 (X = Cl,Br,F),Were Obtained By The Reactions Of The Corresponding Hydrosilanes With Cu(II)-Based Reagents Selectively In High Yields. This Method Could Be Also Applied To The Synthesis Of Chlorofluorosilanes And Chlorohydrogermanes. On The Other Hand,Iodo-And Bromosilanes And Germanes Were Obtained By Pd-Or Ni-Catalyzed Hydride-Halogen Exchange Reactions Of Hydrosilanes With Alkyl Or Allyl Halides. Their Synthetic Applications Have Been Demonstrated By Using Iodo-And Bromosilanes And Chlorofluorosilanes. (C) 2003 Elsevier Science B.V. All Rights Reserved.
DOI:10.1016/s0022-328X(03)00254-7

专利信息

专利号:US-2017240485-A1
优先权日:2014-10-21
标 题:Synthesis of Esters by Functionalisation of CO2

专利号:DE-1169935-B
优先权日:1962-09-28
标题:Process for the processing of polymeric silicon compounds from the distillation residues of the direct synthesis of organo-halosilanes

专利号:US-8889334-B2
优先权日:2001-11-15
标题:Spin-on anti-reflective coatings for photolithography
发明人：KENNEDY JOSEPH T; BALDWIN-HENDRICKS TERESA
权利人:HONEYWELL INT INC
摘要:Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compounds and at least one pH tuning agent that are incorporated into spin-on materials. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. Suitable pH tuning agents not only adjust the pH of the final spin-on composition, but also influence the chemical performance and characteristics, mechanical performance and structural makeup of the final spin-on composition that is part of the layered material, electronic component or semiconductor component, such that the final spin-on composition is more compatible with the resist material that is coupled to it. A method of making absorbing and pH tuned spin-on materials includes combining at least one organic absorbing compound and at least one pH tuning agent with at least one silane reactant during synthesis of the spin-on materials and compositions.

专利号:US-7678462-B2
优先权日:1999-06-10
标 题:Spin-on-glass anti-reflective coatings for photolithography
发明人：KENNEDY JOSEPH; BALDWIN TERESA; HACKER NIGEL P; SPEAR RICHARD
权利人:HONEYWELL INT INC
摘要:Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.