CAS: 10043-11-5; Boron Nitride

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CAS号7664-41-7 氨 | CAS号11113-50-1 硼酸 | CAS号10043-11-5 氮化硼 | CAS号6569-51-3 硼吖嗪 | CAS号78837-91-9 poly(2-vinylpen... | CAS号108-78-1 三聚氰胺 | CAS号19287-45-7 乙硼烷 | CAS号57-13-6 尿素 | CAS号10294-34-5 三氯化硼 | CAS号7637-07-2 三氟化硼 | CAS号7637-07-2 三氟化硼 | CAS号7727-37-9 氮气 | CAS号2551-62-4 六氟化硫 | CAS号19287-45-7 乙硼烷 | CAS号108203-18-5 poly(aminoborazine) | CAS号7664-41-7 氨 | CAS号10043-11-5 氮化硼 | CAS号6569-51-3 硼吖嗪 | CAS号1333-74-0 氢 | CAS号41517-42-4 c-B5N5(H)

硼烷铵络合物置于1-Butyl-3-Methylimidazolium Tetrafluoroborate体系中,120.0~300.0 °C,101.33 Kpa 条件下,反应 34.0H,反应生成氮化硼
参考文献:在离子液体中脱氢制备氮化硼和聚苯乙烯/氮化硼复合颗粒
标题:在离子液体中脱氢制备氮化硼和聚苯乙烯/氮化硼复合颗粒
摘要:氮化硼(bn)是通过在低于200oc的离子液体(1-丁基-3-甲基咪唑四氟硼酸酯,[bmim] [bf 4 ])中于300oc以下温度将硼硼烷(ab)脱氢制得的. Bn的一般制备方法,低于聚苯乙烯(ps)的分解温度.反应在大气压下于120oc下进行10小时,随后将产物材料在[bmim] [bf 4 ]中在减压下于300oc下加热24小时.与在本体系统(无溶剂系统)中观测到的相比,使用[bmim] [bf 4 ]作为介质时,反应速率和最终转化率增加.此外,在[bmim] [bf]中通过脱氢成功制备了ps / Bn复合颗粒4 ]在交联的ps种子颗粒的存在下.复合颗粒超薄截面的透射电镜图像证实了具有ps核和bn壳的颗粒的核-壳形态.
Doi:10.1039/c3Ra47722C

专利信息

专利号:WO-2023036838-A1
优先权日:2021-09-07
标题:Process for preparing starting compounds intended for the synthesis of an ammine metal borohydride
发明人：HAJIYEV PARVIZ; NGUYEN HUYNH DUC
权利人:COMMISSARIAT ENERGIE ATOMIQUE
摘要:Process for preparing a metal hydride of formula AxMHx+m and a borane compound BH3, starting from a product of formula AxM(BNH)x+m, wherein: A is an alkali metal, M is a metal different from an alkali metal, 0 ≤ x ≤10, in particular 0 ≤ x ≤ 2 m>0, the process comprising: aT) reacting the metal hydride of formula AxM(BNH)x+m with ammonia such as obtain an ammoniated product of formula AxM(NH2)x+m and a hydrogenated boron nitride compound BNH, a' 2) the hydrogenation of the ammoniated product of formula AxM(NH2)x+m such as to obtain an metal hydride of formula AxMHx+m, the process further comprising the separation of the hydrogenated boron nitride compound BNH from the ammoniated product of formula AxM(NH2)x+m before step a' 2) or from the metal hydride of formula AxMHx+m after step a' 2), and b) the synthesis of the borane compound BH3, from the hydrogenated boron nitride compound BNH, the synthesis comprising: - a digestion reaction of the boron nitride compound BNH in a gaseous atmosphere containing, even consisting in, an anhydrous hydrogen halide acid gas comprising at least one halogen element Y, such as to produce a boron halide BY3, Y being preferably chlorine Cl, - a hydrodehalogenation of the boron halide, in a hydrogen gas atmosphere to obtain the borane compound BH3.

专利号:WO-2023036831-A1
优先权日:2021-09-07
标 题:Process for preparing starting compounds intended for the synthesis of an ammine metal borohydride
发明人：HAJIYEV PARVIZ; NGUYEN HUYNH DUC
权利人:COMMISSARIAT ENERGIE ATOMIQUE
摘要:Process for preparing a metal hydride of formula AxMHx+m and a borane compound BH3, starting from a product of formula AxM(BNH)x+m, wherein: A is an alkali metal, M is a metal different from an alkali metal, 0 ≤ x ≤10, in particular 0 ≤ x ≤ 2 m>0, the process comprising: a) contacting the product of formula AxM(BNH)x+m with a catalyst comprising a transition metal in solution in an aprotic polar solvent, such as to separate the metal hydride of formula AxMHx+m and a hydrogenated boron nitride compound BNH, b) the synthesis of the borane compound BH3, from the hydrogenated boron nitride compound BNH, the synthesis comprising: - a digestion reaction of the boron nitride compound BNH in a gaseous atmosphere containing, even consisting in, an anhydrous hydrogen halide acid gas comprising at least one halogen element Y, such as to produce a boron halide BY3, Y being preferably chlorine Cl, - a hydrodehalogenation of the boron halide, in a hydrogen gas atmosphere to obtain the borane compound BH3.

专利号:US-5316804-A
优先权日:1990-08-10
标 题:Process for the synthesis of hard boron nitride
发明人：TOMIKAWA TADASHI; FUJITA NOBUHIKO; NAKAGAMA SHYOJI; NAKAYAMA AKIRA
权利人:SUMITOMO ELECTRIC INDUSTRIES
摘要:There can be provided a novel and useful process for the synthesis of hard boron nitride consisting essentially of single phase cubic boron nitride by a gaseous phase synthesis technique, which comprises adding a F atom-containing gas to the gaseous phase or adding a F atom-containing gas and H atom-containing gas to the gaseous phase, whereby the codeposited hexagonal boron nitride can selectively be etched and hard boron nitride of substantially single phase can finally be synthesized.

专利号:US-7182812-B2
优先权日:2002-09-16
标题 :Direct synthesis of oxide nanostructures of low-melting metals
发明人：SUNKARA MAHENDRA KUMAR; SHARMA SHASHANK
权利人:UNIV LOUISVILLE RES FOUND
摘要:The bulk synthesis of highly crystalline noncatalytic low melting metals such as beta-gallium oxide tubes, nanowires, and nanopaintbrushes is accomplished using molten gallium and microwave plasma containing a mixture of monoatomic oxygen and hydrogen. Gallium oxide nanowires were 20-100 nm thick and tens to hundreds of microns long. Transmission electron microscopy (TEM) revealed the nanowires to be highly crystalline and devoid of any structural defects. Results showed that multiple nucleation and growth of gallium oxide nanostructures can occur directly out of molten gallium exposed to appropriate composition of hydrogen and oxygen in the gas phase. These gallium oxide nanostructures are of particular interest for opto-electronic devices and catalytic applications.

专利号:US-2023279562-A1
优先权日:2021-12-30
标题 :Process for the Electrochemical Synthesis of Ammonia (NH3) and the Ammonia Produced Thereby
发明人：GHORAI UTTAM KUMAR; PAUL SOURAV; ADALDER ASHADUL; SARKAR SOUGATA
权利人:GHORAI UTTAM KUMAR; RAMAKRISHNA MISSION VIDYAMANDIRA
摘要:This invention relates to a process for the electrochemical synthesis of ammonia (NH3) and the ammonia produced thereby. Ammonia is synthesized by the electrochemical reduction of nitrogenous materials such as nitrogen or nitrates (NO3-) using metal phthalocyanine such as iron phthalocyanine (FePc) or β-cobalt phthalocyanine (CoPc) or iron phthalocyanine-molybdenum disulfide (FePc-MoS2) or cobalt phthalocyanine- carbon nitride (CoPc-C3N4) catalyst at very low pressure and room temperature by applying low potential.

专利号:US-8852406-B2
优先权日:2012-05-03
标 题 :Method for synthesis of cubic boron nitride
发明人：BAIK YOUNG JOON; PARK JONG KEUK; LEE WOOK SEONG
权利人:KOREA INST SCI & TECH
摘要:A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N 2 ), and hydrogen (H 2 ) is added to the reaction gas at a time after the deposition of a thin film occurs.