CAS: 865-52-1; Tetramethylgermanium

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CAS号75-76-3 四甲基硅烷 | CAS号10038-98-9 氯化锗 | CAS号75-24-1 三甲基铝 | CAS号112712-64-8 三(1,2-苯二醇基-O,O')锗酸二钾 | CAS号13450-92-5 溴化锗(IV) | CAS号917-64-6 甲基碘化镁 | CAS号544-97-8 二甲基锌 | CAS号676-58-4 甲基氯化镁 | CAS号89748-43-6 trimethyl(trime... | CAS号7440-56-4 锗粉 | CAS号1529-47-1 三甲基氯化锗 | CAS号993-10-2 三氯甲基锗 | CAS号1529-48-2 二甲基二氯化锗 | CAS号590-66-9 1,1-二甲基环己烷 | CAS号1066-37-1 三甲基溴化锗 | CAS号34557-54-5 methane | CAS号31608-52-3 m-MeC6H4GeMe3 | CAS号1626-00-2 trimethyl(pheny... | CAS号31608-53-4 trimethyl(4-met...

📜四氯化锗置于magnesium,碘甲烷体系中,用 二丁醚 作为反应溶剂,化学反应生成 四甲基锗
参考文献:Kozuka,Seizi; Tamura,Shoji; Yamazaki,Tetsuya,Bulletin Of The Chemical Society Of Japan,1985,Vol. 58,P. 3277-3281
标题:Kozuka,Seizi; Tamura,Shoji; Yamazaki,Tetsuya,Bulletin Of The Chemical Society Of Japan,1985,Vol. 58,P. 3277-3281

专利信息

专利号:US-11332368-B1
优先权日:2019-12-28
标 题:Methods for high-yield synthesis of higher germanes and higher silanes
发明人：HUANG BAOQUAN; LEE HENRY
权利人:GE SOLARTECH LLC
摘要:High-yield synthesis of higher germanes and higher silanes includes the hydrolysis of a germanium- or silicon-containing alloy with chemical formula AxByGe(Si), wherein A=Mg, Ca, Sr, Ba, Li, Na, K, Rb, Cs, and rare earth metals; B=Al, Si, Sn, Ga, Zn, Fe, Co, Ni, Cu, Ag; x=0-10, y=0-10. The hydrolysis reaction is promoted by an acidic substance such as boron oxide (B2O3), citric acid, hydrochloric acid (HCl), or sulfuric acid (H2SO4). The present invention provides an efficient method of drying higher germanes and higher silanes to prevent their further hydrolysis. Another synthetic process involves the reaction of germanium oxide, borohydride and boron oxide with water. Still another process comprises hydrolyzing the Si1-xGex alloy with a very dilute base solution. The methods enable production of higher germanes from a wide range of germanium-starting materials, including germanium byproducts, impure germanium compounds, and waste products generated in the plasma deposition of thin films containing germanium.

专利号:US-11383218-B2
优先权日:2018-11-28
标题:System and method for rapid, high throughput, high pressure synthesis of materials from a liquid precursor
发明人：ARMSTRONG MICHAEL ROBERT; BASTEA SORIN
权利人:L LIVERMORE NAT SECURITY LLC
摘要:The present disclosure relates to a system and method for synthesis of condensed nano-materials to at least one of create nanoparticles or modify existing nanoparticles. In one embodiment the system may have a source of liquid precursor, with the liquid precursor including a compound therein. A flow control element and a compression wave generating subsystem are also included. The flow control element is in communication with the source of the liquid precursor and creates a jet of liquid precursor. The compression wave generating subsystem drives a compression wave through at least a substantial portion of a thickness of the jet of liquid precursor to sufficiently compress the jet of liquid precursor, and to increase pressure and temperature of the jet of liquid precursor, to at least one of create nanoparticles or modify existing nanoparticles.

专利号:US-4565896-A
优先权日:1984-10-22
标 题 :Process for low pressure synthesis of ethylene glycol from synthesis gas
发明人：KNIFTON JOHN F; DURANLEAU ROGER G
权利人:TEXACO INC
摘要:This invention relates to the manufacture of ethylene glcyol and more particularly to a low pressure process for making ethylene glycol comprising reacting synthesis gas, i.e. a mixture of carbon monoxide and hydrogen, plus formaldehyde in the presence of a homogeneous liquid catalyst containing an effective amount of cobalt-containing compound and a silicon or germanium-containing promoter and a solvent at a temperature of at least 50 DEG C. and a pressure of at least 500 psi wherein said ethylene glycol product separates as a separate liquid phase from the solvent.

专利号:US-4609768-A
优先权日:1984-10-22
标题 :Process for synthesis of ethylene glycol from synthesis gas plus 1,3-dioxolane using 1,3-dioxolane as a solvent
发明人：KNIFTON JOHN F; LIN JIANG-JEN; GRICE NEAL J
权利人:TEXACO INC
摘要:This invention relates to the manufacture of ethylene glycol and more particularly to a low pressure process for making ethylene glycol comprising reacting synthesis gas, i.e. a mixture of carbon monoxide and hydrogen, plus 1,3-dioxolane in the presence of a homogenous liquid catalyst containing an effective amount of cobalt-containing compound, a silane or germane-containing promoter dispersed in a dioxolane solvent at a temperature of at least 50° C. and a pressure of at least 500 psi.

专利号:US-4568780-A
优先权日:1984-10-22
标 题 :Process for low pressure synthesis of ethylene glycol from synthesis gas plus 1,3-dioxolane
发明人：KNIFTON JOHN F
权利人:TEXACO INC
摘要:This invention relates to the manufacture of ethylene glycol and more particularly to a low pressure process for making ethylene glycol comprising reacting synthesis gas, i.e. a mixture of carbon monoxide and hydrogen, plus 1,3-dioxolane in the presence of a homogenous liquid catalyst containing an effective amount of cobalt-containing compound and a silane or germane-containing promoter dispersed in a hydrocarbon solvent at a temperature of at least 50 DEG C. and a pressure of at least 500 psi, where the particular solvents used allow the desired product to be separated from the reaction mixture by phase separation.

专利号:US-8138067-B2
优先权日:2009-06-12
标 题:Method and system for the synthesis of semiconductor nanowires
发明人：RYAN KEVIN M; BARRETT CHRISTOPHER
权利人:RYAN KEVIN M; BARRETT CHRISTOPHER; UNIV LIMERICK
摘要:The invention provides a system and method for producing semiconductor nanowires, for example germanium or Silicon, grown by solution decomposition comprising the steps of heating at least one high boiling point solvent to its reaction temperature in a chamber and injecting a precursor directly into the chamber to react with the at least one high boiling solvent to produce a refluxing solvent. Subsequent vapour deposition of a monomer, achieved by the refluxing solvent, onto a locally heated substrate contained within the chamber produces the semiconductor nanowires. The system and method removes the dependency upon the incorporation of metal catalyst for the production of silicon and germanium nanowire, thereby nullifying the adverse effects of metal contamination in the resulting semiconductor nanowires.