CAS: 12040-02-7; Tin (Ii) Telluride

📜氯化亚锡 反应生成碲化锡(II)
参考文献:Xuzina,R. Z.;Klebanov,E. B.;Morachevskij,A. G.,Zh. Prikl. Ximii,62,(1989) N,S. 1654-1656
标题:Xuzina,R. Z.;Klebanov,E. B.;Morachevskij,A. G.,Zh. Prikl. Ximii,62,(1989) N,S. 1654-1656

专利信息

专利号:US-7790137-B2
优先权日:2006-08-14
标题:Metal telluride nanocrystals and synthesis thereof
发明人：XIAO QIANGFENG; LU YUNFENG; ZHANG MINJUAN
权利人:TOYOTA ENG & MFG NORTH AMERICA; UNIV TULANE
摘要:A process for synthesizing a metal telluride is provided that includes the dissolution of a metal precursor in a solvent containing a ligand to form a metal-ligand complex soluble in the solvent. The metal-ligand complex is then reacted with a telluride-containing reagent to form metal telluride domains having a mean linear dimension of from 2 to 40 nanometers. NaHTe represents a well-suited telluride reagent. A composition is provided that includes a plurality of metal telluride crystalline domains (PbTe)1-x-y(SnTe)x(Bi2Te3)y  (I) having a mean linear dimension of from 2 to 40 nanometers inclusive where x is between 0 and 1 inclusive and y is between 0 and 1 inclusive with the proviso that x+y is less than or equal to 1. Each of the metal telluride crystalline domains has a surface passivated with a saccharide moiety or a polydentate carboxylate. A densified mass having a density of greater than 95% of the theoretical density includes a plurality of lead telluride, tin telluride, bismuth telluride, or a combination thereof of domains having a mean linear dimension of from 2 to 40 nanometers inclusive that have been subjected to hot isotactic pressing.

专利号:US-10755939-B2
优先权日:2018-09-11
标 题 :Multilayer graphene using chemical vapor deposition and method of manufacturing same
发明人：CHO KILWON; YOO MIN SEOK; LEE HYO CHAN
权利人:CT ADVANCED SOFT ELECTRONICS; POSTECH ACADEMY-INDUSTRY FOUND
摘要:Disclosed is a method of manufacturing multilayer graphene, including (a) contacting of a metal substrate with a nonmetal element, (b) reduction through heat treatment, and (c) chemical vapor deposition of a graphene precursor on the metal substrate containing the nonmetal element dissolved therein, thereby manufacturing multilayer graphene that is doped with the nonmetal element on the metal substrate. In the multilayer graphene thus manufactured, the number of graphene layers and the work function are simultaneously adjusted by controlling the concentration of doped nonmetal element in a thickness direction of graphene through interactions related to the reduction of the nonmetal element dissolved in a copper catalyst and the growth of graphene, and moreover, the stacking structure of graphene is maintained and the optoelectronic properties of multilayer graphene can be controlled by simultaneously regulating graphene growth and doping during the synthesis procedure without additional processing.

专利号:CN-116790920-B
优先权日:2022-10-11
标 题 :A melt quenching method for general synthesis of nanoporous metal compound materials doped with metal single atoms

专利号:CN-116790920-A
优先权日:2022-10-11
标题:Universal synthesis of single-atom doped nano porous metal compound material by melt quenching method

专利号:CN-117577247-A
优先权日:2024-01-16
标题 :A method and system for predicting the synthesis parameters of tin telluride thermoelectric materials

专利号:RO-128140-A2
优先权日:2011-04-06
标 题 :SYNTHESIS PROCEDURE OF ULTRASONIC-BASED MATERIALS WITH IMERSATED SONOTROD