📜氢化硅 以 Gas 用作溶剂,化学反应生成乙硅烷 参考文献:Direct Kinetic Studies Of Sih3+sih3,H,Ccl4,Sid4,Si2H6,And C3H6By Tunable Infrared Diode Laser Spectroscopy 标题:Direct Kinetic Studies Of Sih3+sih3,H,Ccl4,Sid4,Si2H6,And C3H6By Tunable Infrared Diode Laser Spectroscopy 摘要:Gas Phase Reactions Of Silyl Radical,Sih3,Are Investigated At Room Temperature Using Tunable Diode Laser Flash Kinetic Spectroscopy. Photolytic Generation Of Silyl At 193 And 248 Nm Is Demonstrated Using Several Different Precursor Systems. The Silyl Recombination Reaction,Sih3+sih3->si2H6,Is Studied By Quantitative Measurement Of Sih3 And Attendant Product Densities. Analysis Yields A Refinement Of The Rate Constant,Krc=(7.9+/-2.9)x10−11 Cm3 Molecule−1 S−1. By Modeling Silyl Densities Following Photolysis Of Hcl In Sih4,Bimolecular Rate Constants For H+sih3 And H+sih4 Are Determined To Be (2+/-1)x10−11 And (2.5+/-0.5)x10−13 Cm3 Molecule−1 S−1,Respectively. Reactions Of Sih3 With Sid4,Si2H6,Ccl4,And C3H6 (Propylene) Are Studied Under Pseudo-First-Order Conditions. Derived Upper Limits To The Rate Constants Show These Reactions To Be Slow At Room Temperature. The Data Demonstrate The Reactivity Of Silyl With Open-Shell (Radical) Species And The General Inertness Of Silyl Toward Closed Shell Molecules. Under Typical Chemical Vapor Deposition Conditions,Sih3 Is,Therefore,A Kinetically Long-Lived Species In The Gas Phase And Consequently A Potentially Important Film Forming Species Under Plasma And Photochemical Deposition Conditions. Doi:10.1063/1.461707
专利信息
专利号:US-2024309024-A1 优先权日:2023-03-14 标题 :Direct synthesis of alkenylhalosilanes 发明人:LEWIS KENRICK MARTIN; ZHU YANJUN; BYRNE CHRISTOPHER M 权利人:MOMENTIVE PERFORMANCE MAT INC 摘要:A process for the direct synthesis of alkenylhalosilane monomers. Forming a slurry of liquid and copper-activated silicon from fresh silicon, cyclone fines and/or fine dust from silicon grinding, ultrafines and/or spent contact mass from the Direct Synthesis of alkylhalosilanes and arylhalosilanes, in a thermally stable solvent. Reacting the silanes by agitating the slurry with at least one unsaturated aliphatic or cycloaliphatic organohalide of the formula R1X, and optionally an organohalosilane and/or hydrogen halide, in the presence of a polymerization inhibiting Lewis base additive, at a reaction time, temperature and pressure effective to produce alkenylhalosilanes having the formulae, R1SiHX2, R12SiHX, R13SiX, R1SiX3, and R12SiX2 or mixtures thereof.
专利号:US-2010173100-A1 优先权日:2006-01-16 标题 :Method for the synthesis of product molecules 发明人:WEISS HORST; GERBER GUSTAV; NUERNBERGER PATRICK HENNING; WOLPERT DANIEL STEPHAN 权利人:BASF AG 摘要:The invention relates to a method for the synthesis of product molecules, wherein ultrashort laser pulses shaped with the aid of a pulse shaper are generated and a gas which contains educt molecules is fed onto a surface, on which the educt molecules are at least partially adsorbed, the shaped ultrashort laser pulses being directed onto the surface in order to control a reaction process for synthesis of the product molecules from educts adsorbed on the surface.
专利号:US-5877337-A 优先权日:1997-03-20 标 题 :Process for preparing alkylchlorosilanes from the residues of direct synthesis of alkylchlorosilanes 发明人:MAUTNER KONRAD; SCHINABECK ANTON; STRAUSSBERGER HERBERT 权利人:WACKER CHEMIE GMBH 摘要:Alkylchlorosilanes are prepared continuously from the residue of direct synthesis of alkylchlorosilanes containing liquid constituents with a boiling point of at least 70 DEG C. at 1013 hPa and solid constituents, by heating the residue with hydrogen chloride at temperatures of from 300 DEG C. to 800 DEG C. in a tubular reactor with internals which can be rotated.
专利号:US-8637695-B2 优先权日:2011-12-30 标 题:Synthesis of organohalosilane monomers from conventionally uncleavable Direct Process Residue 发明人:LEWIS KENRICK MARTIN; NEELY JOHN DAVID 权利人:LEWIS KENRICK MARTIN; NEELY JOHN DAVID; MOMENTIVE PERFORMANCE MAT INC 摘要:Disclosed herein is a catalytic process for the synthesis of organohalosilane monomers from tetraorganodihalodisilanes and other compounds that are not cleaved during the conventional hydrochlorination of Direct Process Residue. The process is characterized by the use of a catalyst containing (1) one or more heterocyclic amines and/or one or more heterocyclic ammonium halides, and (2) one or more quaternary Group 15 onium compounds.
专利号:US-9944532-B2 优先权日:2013-10-22 标 题 :Solid source and method for the synthesis of silicon-containing precursors for chemical vapor deposition 发明人:SCARLETE MIHAI; AKTIK CETIN 权利人:SOCPRA SCIENCE ET GENIE S E C; UNIV DE BISHOP; SOCPRA SCIENCE ET GENIE S E C 摘要:The present document described a solid source and a method for synthesis of silicon-containing precursors for chemical vapor deposition. The solid source comprises a solid polysilane; an energy coupling agent distributed in the solid polysilane; and hydrogen, mixed with the solid polysilane and the energy coupling agent distributed in the solid polysilane, in a necessary amount to satisfy a hydrogen deficiency during a hydrogenolysis reaction.
专利号:WO-2012101052-A1 优先权日:2011-01-25 标 题:Cleaning dry residues of the direct synthesis of alkylchlorosilanes 发明人:ALBER ANNE; KUNERT JAN; ZIPP ALEXANDER; EBERLE HANS-JUERGEN 权利人:WACKER CHEMIE AG; ALBER ANNE; KUNERT JAN; ZIPP ALEXANDER; EBERLE HANS-JUERGEN 摘要:The invention relates to a method for cleaning dry residues of the direct synthesis of alkylchlorosilanes by treating the residues with an organic solvent.
摘要:Merck Index - O'Neil MJ, Heckelman PE, Dobbelaar PH, Roman KJ (eds). The Merck Index, An Encyclopedia of Chemicals, Drugs, and Biologicals, 15th Ed. Cambridge, UK: The Royal Society of Chemistry, 2013.