专利号:US-5453500-A 优先权日:1994-05-26 标 题:Water-soluble glycosylated derivatives of 1,2-dithiin compounds 发明人:KOREEDA MASATO; SHULL BRIAN K; YANG WU 权利人:UNIV MICHIGAN 摘要:Novel water-soluble mono and disaccharides of 1,2-dithiins, as well as methods for their synthesis and the synthesis of 3,6-bis(hydroxymethyl)-1,2-dithiin, are provided. The water-soluble compounds have useful medicinal applications, e.g., as an antifungal agent or antibacterial agent in a pharmaceutically acceptable carrier.
专利号:US-9115155-B1 优先权日:2014-03-20 标题:Low-pressure synthesis of cyclohexanedimethanol and derivatives 发明人:BOONE MATTHEW ALLEN; HEMBRE ROBERT THOMAS 权利人:EASTMAN CHEM CO 摘要:The invention is directed to a process for preparing a 1,4-disubstituted cyclohexane compound of formula (I): n n n n n n n n n n n n where A is —OH, —OR, Br, or Cl; and n R is a silyl group, a hydrocarbyl group, or an acyl group having 1 to 12 carbon atoms. The process includes the steps of reacting ethylene with a (2E,4E)-hexa-2,4-diene compound to produce a 3,6-disubstituted cyclohex-1-ene compound, and hydrogenating the 3,6-disubstituted cyclohex-1-ene compound to yield the 1,4-disubstituted cyclohexane compound of formula (I).
专利号:US-9923142-B2 优先权日:2016-05-31 标 题:Methods of graphene growth and related structures 发明人:CHEN MIIN-JANG; PAN SAMUEL C; HSIEH CHUNG-YEN 权利人:TAIWAN SEMICONDUCTOR MFG CO LTD; UNIV NAT TAIWAN 摘要:A method and structure for providing uniform, large-area graphene by way of a transfer-free, direct-growth process. In some embodiments, a SAM is used as a carbon source for direct graphene synthesis on a substrate. For example, a SAM is formed on an insulating surface, and a metal layer is formed over the SAM. The metal layer may serve as a catalytic metal, whereby the SAM is converted to graphene following an annealing process. The SAM is deposited using a VPD process (e.g., an ALD process and/or an MLD process). In some embodiments, a CNT having a controlled diameter may be formed on the surface of a nanorod by appropriately tuning the geometry of the nanorod. Additionally, in some embodiments, a curved graphene transistor may be formed over a curved oxide surface, thereby providing a band gap in a channel region of the graphene transistor.
专利号:KR-102368944-B1 优先权日:2014-03-20 标 题 :Low-pressure synthesis of cyclohexanedimethanol and derivatives
专利号:EP-3119739-A1 优先权日:2014-03-20 标 题 :Low-pressure synthesis of cyclohexanedimethanol and derivatives
专利号:KR-20160136369-A 优先权日:2014-03-20 标题 :Low-pressure synthesis of cyclohexanedimethanol and derivatives