CAS: 175923-04-3; Tetrakis(Ethylmethylamino)Zirconium

该化合物是有机金属化合物,其特点是一个对四种乙甲基氨离心管加以协调的中心;该化合物通常用于化学蒸气沉降过程,特别是用于制造薄膜用于半导体应用;其结构允许形成稳定的复合体,有助于在各种子体上沉积含有的材料;Tetraki(乙甲基氨基)的特点是其相对低的挥发性和高度的再活性,使之适合需要精确控制胶片成分和厚度的工艺;此外,必须谨慎地处理该化合物,因为它可能构成健康和安全风险,包括潜在的毒性和易燃性;应当遵循适当的储存和处理规程来减轻这些风险;

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    专利信息


    专利号:US-8859785-B2
    优先权日:2009-05-29
    标 题 :Volatile group 2 metal precursors
    发明人:NORMAN JOHN ANTHONY THOMAS
    权利人:NORMAN JOHN ANTHONY THOMAS; AIR PROD & CHEM
    摘要:A compound comprising one or more polyfunctionalized pyrrolyl anions coordinated to a metal selected from the group consisting of barium, strontium, magnesium, radium or calcium or mixtures thereof. Alternatively, one anion can be substituted with and a second non-pyrrolyl anion. n Synthesis of the novel compounds and their use to form BST films is also contemplated.

    专利号:WO-2023119507-A1
    优先权日:2021-12-22
    标 题 :Catechol-modified metal-organic framework and manufacturing method therefor
    发明人:KURIBAYASHI Takaki; YOSHIMURA ATSUKI; HASEGAWA TATSUYA; OMORI HITOSHI; NAKAGAWA HIROYUKI; TAKEUCHI HIROMITSU
    权利人:TOYODA GOSEI KK
    摘要:[Problem] To increase the number of catechol sites for modification in a metal-organic framework. [Solution] This catechol-modified metal-organic framework comprises: a metal organic framework that contains a central metal and an organic ligand and that has an average particle diameter of 100 nm or less; and catechol sites that modifies the organic ligand. The modification rate of catechol sites relative to the organic ligand is 50% or more. In a metal-organic framework synthesis step, the concentration of the acid, serving as a regulator, is adjusted to be low so that a metal-organic framework having an average particle diameter of 100 nm or less is synthesized.

    专利号:CN-214915953-U
    优先权日:2021-06-29
    标 题:A Synthesis System of ALD Precursors

    专利号:CN-111279015-B
    优先权日:2017-08-24
    标 题 :Manufacturing processes for synthesis, functionalization, surface treatment and/or encapsulation of powders and their applications
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    合成参考文献


    参考文献:10.1134/s1063739723600486
    摘要:Reznik AA, Rezvanov AA, Zyuzin SS. Buffer Layers for Nonvolatile Ferroelectric Memory Based on Hafnium Oxide. Russ Microelectron. 2023 Dec;52(S1):S38–43. doi: 10.1134/s1063739723600486.
    参考文献:10.1134/s1027451025700582
    摘要:Lev LL, Konashuk AS, Khakimov RR, Chernikova AG, Markeev AM, Lebedev AM, Nazin VG, Chumakov RG, Zenkevich AV. Structural Evolution of Nanoscale Ferroelectric Hf0.5Zr0.5O2 Layers as a Result of Their Cyclic Electrical Stimulation. J. Surf. Investig. 2025 Apr;19(2):399–404. doi: 10.1134/s1027451025700582.
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