CAS: 595-89-1; Tetraphenyl Lead

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📜氯化三苯基铅置于4-Chlorophenol,Benzene体系中,用 乙醚,苯 作为反应溶剂,化学反应生成 四苯基铅
参考文献:(环戊二烯基)苯基铅(iv)化合物的化学
标题:(环戊二烯基)苯基铅(iv)化合物的化学
摘要:黄色空气稳定的(环戊二烯基)苯基-铅(iv)化合物,Pbph 4-ñ(cp)ñ [ñ = 1或2,Cp = C 5 H ^ 5],已经通过相应的苯基的反应合成氯化铅(iv)和环戊二烯化锂在乙醚中的溶液.pbph 3(cp)的晶体是单斜晶体,空间群p 2 1 / C,其中a = 9.5426,B = 12.3843,C = 16.1714å,β= 102.3358°和z= 4,并且包括具有扭曲的四面体几何形状的离散的非相互作用分子.pb-c(cp)键的距离[2.30(2)å]明显长于pb-c(ph)的距离[平均2.22(2)å],表明该键的强度明显减弱.环戊二烯基环(平面)的环内cc键与远离铅的碳原子上的π电子密度浓度一致.pbph 3(cp)与乙酸,苯硫酚和咪唑的反应继续进行pb-c(cp)键裂解,得到pbph 3(o 2 Cme),Pbph 3(sph)和pbph 3(n 2 C 3
DOI:10.1039/dt9820001055

专利信息

专利号:US-9828674-B2
优先权日:2009-10-26
标题 :Synthesis and use of precursors for ALD of group VA element containing thin films
发明人：PORE VILJAMI; HATANPÄÄ TIMO; RITALA MIKKO; LESKELÄ MARKKU
权利人:ASM IP HOLDING BV
摘要:Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR 1 R 2 R 3 ) 3 are preferably used, wherein R 1 , R 2 , and R 3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

专利号:US-3454610-A
优先权日:1966-05-26
标 题 :Synthesis of organometallic halides by redistribution
发明人：LANGER HORST G
权利人:DOW CHEMICAL CO

专利号:US-11542600-B2
优先权日:2009-10-26
标题 :Synthesis and use of precursors for ALD of group VA element containing thin films

专利号:US-12043893-B2
优先权日:2017-08-24
标题:Manufacturing processes to synthesize, functionalize, surface treat and/or encapsulate powders, and applications thereof
发明人：KING DAVID; DAMERON ARRELAINE; TREVEY JAMES; LICHTY PAUL; ARGO ANDREW; BOURGOIS KYLE; RAGONESI JAMES; INGHAM KYLE; JACKSON DAVID; TRACY RYON; NGUYEN NGHI; LYON ADAM; VILLAGOMEZ JOSE; CURRY GARRETT
权利人:FORGE NANO INC
摘要:A system, apparatus and method are provided for processing articles. The system includes subsystems for synthesizing, pre-treating, conducting a vapor phase coating process and post-treating articles in the form of powders and solid or porous workpieces. The apparatus permits vapor phase synthesis, treatment and deposition processes to be performed with high efficiency and at high overall throughput. The methods include converting solids, liquids or gases into gaseous and solid streams that can be separated or exchanged with or without treatment and/or coating steps, and produce optimized composite articles for specific applications.

专利号:US-2012329208-A1
优先权日:2009-10-26
标题:Synthesis and use of precursors for ald of group va element containing thin films

专利号:TW-I516632-B
优先权日:2009-10-26
标 题 :Synthesis and use of precursors for atomic layer deposition of films containing VA elements