- 英文名称N,N,N'-Tributylthiourea
- 中文名称N,N,N'-三丁基硫脲
- IUPAC名称1,1,3-tributylthiourea
- 其它别名Thiourea,tributyl- (9CI); Urea, 1,1,3-tributyl-2-thio- (6CI,7CI,8CI); 1,3,3-Tributylthiourea; N,N,N'-Tributylthiourea; N-Butyl-N,N'-dibutylthiourea; N°Crac TBTU; TBTM; TBTU; Tri-n-butylthiourea; Tributylthiourea
- CAS编号2422-88-0
- MFCD编号:MFCD00082697
- EINECS号:219-350-2
- FDA UNII编号:OJ12766RJ3
- 分子式:C13H28N2S分子量:244.44
- 产品CID: 1188720
- 产品分类有机原料→分子砌块→脂肪链类化合物
相似化合物
109-46-6 35542-99-5 32900-06-4欧盟法规
REACH注册REACH预注册专利信息
专利号:US-8043786-B2
优先权日:2003-03-05
标题 :Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions
发明人:EBATA SATOSHI; WANG YONG; NISHIMURA ISAO
权利人:JSR CORP
摘要:The invention provides novel acid generators which are unproblematic in combustibility and accumulation inside the human body and can generate acids having high acidities and high boiling points and exhibiting properly short diffusion lengths in resist coating films and which permit the formation of resist patterns excellent smoothness with little dependence on the denseness of a mask pattern; sulfonic acids generated from the acid generators; sulfonyl halides useful as raw material in the synthesis of the acid generators; and radiation-sensitive resin compositions containing the acid generators. The acid generators have structures represented by the general formula (I), n nwherein R 1 is a monovalent substituent such as alkoxycarbonyl, alkylsulfonyl, or alkoxysulfonyl; R 2 to R 4 are each hydrogen or alkyl; k is an integer of 0 or above; and n is an integer of 0 to 5. Among the radiation-sensitive resin compositions, a positive one contains a resin having acid-dissociable groups in addition to the above acid generator, while a negative one contains an alkali-soluble resin and a crosslinking agent in addition to the acid generator.
专利号:KR-20090102733-A
优先权日:2006-12-27
标 题 :Method for synthesis of hyperbranched polymer, hyperbranched polymer, resist composition, semiconductor integrated circuit, and method for production of semiconductor integrated circuit
专利号:KR-20090103860-A
优先权日:2006-12-28
标题:Process for synthesis of hyperbranched polymer, hyperbranched polymer, resist compositions, semiconductor integrated circuits, and process for production of semiconductor integrated circuits