CAS: 7440-74-6; Indium

相似化合物

207398-96-7 10294-68-5

上下游产品

CAS号10025-82-8 氯化铟 | CAS号6731-23-3 tris(2-methylpr... | CAS号101749-61-5 tri-sec-butylindium | CAS号17144-80-8 tri(propan-2-yl... | CAS号15676-66-1 tributylindigane | CAS号102920-51-4 pentamethylcycl... | CAS号87461-85-6 | CAS号87461-86-7 sodium tetrakis... | CAS号7440-69-9 铋 | CAS号3385-78-2 三甲基铟 | CAS号7783-52-0 氟化铟 | CAS号877238-62-5 indium(I) hexaf... | CAS号13510-35-5 碘化铟(III) | CAS号10025-82-8 氯化铟 | CAS号14280-53-6 溴化铟 | CAS号13465-10-6 氯化亚铟 | CAS号13967-14-1 Phosphinidene

专利信息

专利号:US-11926589-B2
优先权日:2019-07-09
标 题 :Process for the synthesis of non-racemic cyclohexenes
发明人：REISMAN SARAH; ROMBOLA MICHAEL; LADD CAROLYN L; MCLAUGHLIN MARTIN JOHN; ZUEND STEPHAN; GOETZ ROLAND
权利人:BASF CORP; CALIFORNIA INST OF TECHN
摘要:This invention relates to a process for the synthesis of a non-racemic cyclohexene compound of formula (I) by a Diels-Alder reaction of a compound of formula (II) with a compound of formula (III) wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 and Y have the meanings as defined in the description in the presence of a catalyst comprising at least one m-valent metal cation M m+ wherein the metal M is selected from Scandium (Sc), Yttrium (Y), Lanthanum (La), Cerium (Ce), Praseodymium (Pr), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium 15 (Gd), Terbium (Tb), Dysprosium (Dy), Holmium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb), Lutetium (Lu), Gallium (Ga) and Indium (In), and m is an integer of 1, 2 or 3, and a chiral ligand of the formula (IV) wherein R 10a , R 10b , R 10c , R 10d , R 10a′ , R 10b′ , R 10c′ , R 10d′ , Z and Z′ have the meanings as defined in the description.

专利号:US-10260154-B2
优先权日:2015-08-01
标 题:Method for the synthesis of layered luminescent transition metal dichalcogenide quantum dots
发明人：MANIKOTH SHAIJUMON MANCHERI; DAMIEN DIJO; Gopalakrishnan Deepesh
权利人:INDIAN INSTITUTE OF SCIENCE EDUCATION AND RES THIRUVANANTHAPURAM IISER TVM
摘要:The invention discloses a method for the synthesis of monodispersed luminescent quantum dots of transition metal dichalcogenides (TMDC), single- or few-layered, using a single-step electrochemical exfoliation that involves dilute ionic liquid and water. The method disclosed helps to obtain nanoclusters of TMDC of desired size including small sizes ranging up to 6 nm, by varying the concentration of the electrolyte and the applied DC voltage. The invention further discloses a method by which mono- or few-layered luminescent transition metal dichalcogenides can be directly deposited onto conducting substrates in a uniform manner. The monodispersed single- or few-layered luminescent TMDC and electro-deposited substrates exhibit improved electronic conductivity and new active sites, making them suitable as high-performance electrocatalysts in hydrogen evolution reactions in solar water-splitting applications and also as electrodes for solar cell applications.

专利号:US-11697625-B2
优先权日:2020-10-29
标 题:Direct synthesis of light olefins from carbon dioxide using yttria-stabilized zirconia support
发明人：SASMAZ ERDEM; KIM SUNKYU
权利人:UNIV CALIFORNIA
摘要:The present invention features a direct synthesis of light olefins through the hydrogenation of carbon dioxide. In2O3 supported on cubic phase yttria-stabilized zirconia is used as a catalyst and is mixed with a molecular sieve to perform the hydrogenation. The cubic crystal structure of the yttria-stabilized zirconium dioxide is an excellent support for indium oxide particles and prevents their deactivation during CO2 hydrogenation. This direct synthesis route promotes a stable and efficient method for producing light olefins.

专利号:US-9029547-B1
优先权日:2013-12-07
标 题 :Synthesis of 4-aryl 4-acyl piperidine, its salts and analogs using indium metal
发明人：MAJEED MUHAMMED; RAMANUJAM RAJENDRAN; NAGABHUSHANAM KALYANAM
权利人:MAJEED MUHAMMED; RAMANUJAM RAJENDRAN; NAGABHUSHANAM KALYANAM
摘要:A novel process for the synthesis of 4-aryl 4-acyl piperidine derivatives using indium metal is described. Specifically, a novel process for the synthesis of 4-acetyl 4-phenyl piperidine and its salts using indium metal is described. This divisional application is specifically drawn to compounds 4-aryl 1,4-diacyl piperidine and 1,4 diacetyl 4-phenyl piperidine.

专利号:US-9790425-B2
优先权日:2014-04-18
标 题:Synthesis of quantum dots
发明人：MCDANIEL HUNTER
权利人:LOS ALAMOS NAT SECURITY LLC
摘要:Common approaches to synthesizing alloyed quantum dots employ high-cost, air-sensitive phosphine complexes as the selenium precursor. Disclosed quantum dot synthesis embodiments avoid these hazardous and air-sensitive selenium precursors. Certain embodiments utilize a combination comprising a thiol and an amine that together reduce and complex the elemental selenium to form a highly reactive selenium precursor at room temperature. The same combination of thiol and amine acts as the reaction solvent, stabilizing ligand, and sulfur source in the synthesis of quantum dot cores. A non-injection approach may also be used. The optical properties of the quantum dots synthesized by this new approach can be finely tuned for a variety of applications by controlling size and/or composition of size and composition. Further, using the same approach, a shell can be grown around a quantum dot core that improves stability, luminescence efficiency, and may reduce toxicity.

专利号:US-7182812-B2
优先权日:2002-09-16
标题 :Direct synthesis of oxide nanostructures of low-melting metals
发明人：SUNKARA MAHENDRA KUMAR; SHARMA SHASHANK
权利人:UNIV LOUISVILLE RES FOUND
摘要:The bulk synthesis of highly crystalline noncatalytic low melting metals such as beta-gallium oxide tubes, nanowires, and nanopaintbrushes is accomplished using molten gallium and microwave plasma containing a mixture of monoatomic oxygen and hydrogen. Gallium oxide nanowires were 20-100 nm thick and tens to hundreds of microns long. Transmission electron microscopy (TEM) revealed the nanowires to be highly crystalline and devoid of any structural defects. Results showed that multiple nucleation and growth of gallium oxide nanostructures can occur directly out of molten gallium exposed to appropriate composition of hydrogen and oxygen in the gas phase. These gallium oxide nanostructures are of particular interest for opto-electronic devices and catalytic applications.