CAS: 1315-06-6; Tin Selenide

专利信息

专利号:US-10755939-B2
优先权日:2018-09-11
标 题 :Multilayer graphene using chemical vapor deposition and method of manufacturing same
发明人：CHO KILWON; YOO MIN SEOK; LEE HYO CHAN
权利人:CT ADVANCED SOFT ELECTRONICS; POSTECH ACADEMY-INDUSTRY FOUND
摘要:Disclosed is a method of manufacturing multilayer graphene, including (a) contacting of a metal substrate with a nonmetal element, (b) reduction through heat treatment, and (c) chemical vapor deposition of a graphene precursor on the metal substrate containing the nonmetal element dissolved therein, thereby manufacturing multilayer graphene that is doped with the nonmetal element on the metal substrate. In the multilayer graphene thus manufactured, the number of graphene layers and the work function are simultaneously adjusted by controlling the concentration of doped nonmetal element in a thickness direction of graphene through interactions related to the reduction of the nonmetal element dissolved in a copper catalyst and the growth of graphene, and moreover, the stacking structure of graphene is maintained and the optoelectronic properties of multilayer graphene can be controlled by simultaneously regulating graphene growth and doping during the synthesis procedure without additional processing.

专利号:US-8741386-B2
优先权日:2012-09-28
标 题:Atomic layer deposition of quaternary chalcogenides
发明人：THIMSEN ELIJAH J; RIHA SHANNON C; MARTINSON ALEX B F; ELAM JEFFREY W; PELLIN MICHAEL J
权利人:THIMSEN ELIJAH J; RIHA SHANNON C; MARTINSON ALEX B F; ELAM JEFFREY W; PELLIN MICHAEL J; UCHICAGO ARGONNE LLC
摘要:Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu 2 ZnSnS 4 ). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.

专利号:JP-2013512174-A
优先权日:2009-11-25
标题 :Synthesis of quaternary chalcogenides in fluxes containing cesium, rubidium, barium, and lanthanum

专利号:CN-107381514-A
优先权日:2017-08-09
标题:A microwave-assisted rapid synthesis of tin selenide nanosheets

专利号:CN-116790920-B
优先权日:2022-10-11
标 题 :A melt quenching method for general synthesis of nanoporous metal compound materials doped with metal single atoms

专利号:CN-116790920-A
优先权日:2022-10-11
标题:Universal synthesis of single-atom doped nano porous metal compound material by melt quenching method