CAS: 12059-14-2; Nickel Silicide

专利信息

专利号:US-2024097109-A1
优先权日:2021-02-11
标 题:Bottom-Up, Scalable Synthesis Of Oxide-Based Sub-Nano And Nanofilaments And Nanofilament-Based Two-Dimensional Flakes And Mesoporous Powders
发明人：BARSOUM MICHEL W; BADR HUSSEIN OSAMA
权利人:UNIV DREXEL
摘要:Provided are methods to convert—through a bottom-up approach—binary and ternary titanium carbides, nitrides, borides, phosphides, aluminides, and silicides into lepidocrocitic nanofilaments that in some cases self-assemble into 2D flakes by immersing them in a quaternary ammonium solution at moderate temperatures. The resulting flakes can comprise nanofilaments in cross-section, some of which nanofilaments can be few microns long in some instances.

专利号:US-5479875-A
优先权日:1993-09-17
标题:Formation of highly oriented diamond film
发明人：TACHIBANA TAKESHI; SAITO KIMITSUGU; HAYASHI KAZUSHI; NISHIMURA KOZO; NAKAMURA RIE
权利人:KOBE STEEL LTD
摘要:A method of forming a highly oriented diamond film having a reduced thickness with a high quality at a low cost. Surface of a single crystal substrate is cleaned, and is then left in a high vacuum of 10-6 Torr or less at a temperature between room temperature and 800 DEG C. for 15 min for releasing gas molecules absorbed on the surface of the substrate. The surface of the substrate is then processed using carbon-containing plasma for forming a barrier of obstructing a carbon component within the substrate. After that, an electric field is applied across the substrate and plasma for allowing a current to flow thereacross for a specified time, to form nuclei of diamond for synthesis of a diamond film. Thus, highly oriented diamond particles or films, in which crystal orientations thereof are epitaxial to the substrate, are synthesized.

专利号:US-9206507-B2
优先权日:2011-09-27
标题 :Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions
发明人：LANSALOT-MATRAS CLÉMENT; GATINEAU JULIEN; JURCIK JR BENJAMIN J
权利人:L AIR LIQUIDE SOCIÉTÉ ANONYME POUR L ETUDE ET L EXPL DES PROCÉDÉS GEORGES CLAUDE; AIR LIQUIDE AMERICAN
摘要:Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formula Ni(R-DAD) 2 , wherein R-DAD stands for substituted 1,4-diazabuta-1,3-diene ligands. The sole presence of the Ni—N bonds was also considered to avoid too high intrusion of other elements, such as carbon, into the nickel-containing films. The flexibility of the Ni—N bond in terms of film deposition also allows using the molecules for nickel, nickel-nitride, nickel-carbonitride, nickel oxide or any other type of nickel-containing films. The nickel-containing film depositions can be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD or any other type of depositions methods.

专利号:CN-117042802-A
优先权日:2021-02-11
标题 :Bottom-up scalable synthesis of oxide-based subnanofilaments and nanofilaments and nanofilament-based two-dimensional flakes and mesoporous powders