CAS: 12058-18-3; Molybdenum(Iv) Selenide

上下游产品

selenium molybdenum sodium molybdate dihydrate selenium(IV) oxide

专利信息

专利号:US-10260154-B2
优先权日:2015-08-01
标 题:Method for the synthesis of layered luminescent transition metal dichalcogenide quantum dots
发明人：MANIKOTH SHAIJUMON MANCHERI; DAMIEN DIJO; Gopalakrishnan Deepesh
权利人:INDIAN INSTITUTE OF SCIENCE EDUCATION AND RES THIRUVANANTHAPURAM IISER TVM
摘要:The invention discloses a method for the synthesis of monodispersed luminescent quantum dots of transition metal dichalcogenides (TMDC), single- or few-layered, using a single-step electrochemical exfoliation that involves dilute ionic liquid and water. The method disclosed helps to obtain nanoclusters of TMDC of desired size including small sizes ranging up to 6 nm, by varying the concentration of the electrolyte and the applied DC voltage. The invention further discloses a method by which mono- or few-layered luminescent transition metal dichalcogenides can be directly deposited onto conducting substrates in a uniform manner. The monodispersed single- or few-layered luminescent TMDC and electro-deposited substrates exhibit improved electronic conductivity and new active sites, making them suitable as high-performance electrocatalysts in hydrogen evolution reactions in solar water-splitting applications and also as electrodes for solar cell applications.

专利号:US-2024263349-A1
优先权日:2023-02-02
标 题 :Phase-controllable synthesis of transition metal dichalcogenide monolayer crystals
发明人：ZHANG HUA; ZHAI WEI; WANG YONGJI
权利人:UNIV CITY HONG KONG
摘要:The present invention provides a general salt-assisted chemical vapour deposition method for phase-controllable synthesis of 1T′ and 2H-phase transition metal dichalcogenide (TMD) monolayer crystals. The method comprises: mixing a transition metal compound powder and a salt powder to form a precursor; placing a substrate on top of the precursor; placing the precursor and the substrate at a center position in a chemical vapour deposition (CVD) furnace; placing a chalcogen powder at an upstream position relative to the precursor along a gas-flow direction in the CVD furnace; heating up the CVD furnace to a growth temperature within the heat-up time; keeping the CVD furnace at the growth temperature for a growth time under a mixed gas flow of H2 and Ar. The optical and electrical characterizations reveal the phase-dependent in-plane isotropy and anisotropy of the as-synthesized 2H and 1T′-phase crystals. The 1T′-TMD monolayer crystals demonstrate much-improved phase transition temperatures.

专利号:US-2023279562-A1
优先权日:2021-12-30
标题 :Process for the Electrochemical Synthesis of Ammonia (NH3) and the Ammonia Produced Thereby
发明人：GHORAI UTTAM KUMAR; PAUL SOURAV; ADALDER ASHADUL; SARKAR SOUGATA
权利人:GHORAI UTTAM KUMAR; RAMAKRISHNA MISSION VIDYAMANDIRA
摘要:This invention relates to a process for the electrochemical synthesis of ammonia (NH3) and the ammonia produced thereby. Ammonia is synthesized by the electrochemical reduction of nitrogenous materials such as nitrogen or nitrates (NO3-) using metal phthalocyanine such as iron phthalocyanine (FePc) or β-cobalt phthalocyanine (CoPc) or iron phthalocyanine-molybdenum disulfide (FePc-MoS2) or cobalt phthalocyanine- carbon nitride (CoPc-C3N4) catalyst at very low pressure and room temperature by applying low potential.

专利号:US-9640391-B2
优先权日:2015-06-23
标 题:Direct and pre-patterned synthesis of two-dimensional heterostructures
发明人：YANG EUI-HYEOK; KANG KYUNG NAM
权利人:THE TRUSTEES OF THE STEVENS INST OF TECH
摘要:A method for growing a transition metal dichalcogenide on a substrate, the method including providing a growth substrate having a first side and a second side opposite the first side; providing a source substrate having a first side and a second side opposite the first side; depositing a transition metal oxide on at least a portion of the first side of the source substrate; combining the growth substrate with the source substrate such that the first side of the growth substrate contacts the transition metal oxide, the combining producing a substrate stack; exposing the substrate stack to a chalcogenide gas, whereby the transition metal oxide reacts with the chalcogenide gas to produce a layer of a transition metal dichalcogenide on at least a portion of the first side of the growth substrate; and removing the source substrate from the growth substrate having the layer of the transition metal dichalcogenide thereon.

专利号:US-2022144662-A1
优先权日:2020-11-10
标题 :Method for Direct Synthesis of Nanomaterials by Heating of Bulk Sources
发明人：HEJAZI DAVOUD; KAR SWASTIK; TAN RENDA
权利人:UNIV NORTHEASTERN
摘要:Methods for making of nanomaterials from a bulk source material involve heating the material in an inert atmosphere, whereby a material having at least one nanometer scale dimension is formed on a nearby substrate surface. The heated bulk source material forms a vapor phase which is deposited in the form of the nanomaterial on a growth surface of the substrate. The methods require no complex machinery or devices, unlike chemical vapor deposition, and can be tuned to provide different forms of nanomaterials, such as two-dimensional or other crystalline forms. The methods can be used to make two-dimensional semiconductor materials and semiconductor devices.

专利号:US-10822246-B2
优先权日:2016-05-23
标题:Mesoporous metal oxides, preparation and applications thereof
发明人：SUIB STEVEN L; LUO ZHU
权利人:UNIV CONNECTICUT
摘要:This disclosure provides a unique approach for the synthesis of non-stoichiometric, mesoporous metal oxides with nano-sized crystalline wall. The as-synthesized mesoporous metal oxide is very active and stable (durability >11 h) electocatalyst in both acidic and alkaline conditions. The intrinsic mesoporous metal oxide serves as an electrocatalyst without the assistant of carbon materials, noble metals, or other materials, which are widely used in previously developed systems. The as-synthesized mesoporous metal oxide has large accessible pores (2-50 nm), which are able to facilitate mass transport and charge transfer. The as-synthesized mesoporous metal oxide requires a low overpotential and is oxygen deficient. Oxygen vacancies and mesoporosity served as key factors for excellent performance.