CAS: 12025-32-0; Germanium(Ii) Sulfide

上下游产品

digermyl sulfide hydrogen sulfide monogermylarsine germane

专利信息

专利号:US-2007074541-A1
优先权日:2003-10-10
标 题:Synthesis of germanium sulphide and related compounds
发明人：BADDING JOHN V; HEWAK DANIEL W; HUANG CHUNG-CHE
权利人:UNIV SOUTHAMPTON
摘要:The invention relates to synthesis of germanium sulphide glasses and optical devices formed therefrom. In a chemical vapour deposition process, germanium tetrachloride is reacted with hydrogen sulphide at temperatures in the range 450-700° C. to form germanium sulphide. Lower temperatures within this range of 450-550° C. directly produce a glass, whereas higher temperatures within the range of 600-700° C. produce a crystalline powder which can then be reduced to a glass by subsequent melting and annealing. The reaction is preferably carried out at atmospheric pressure or slightly higher. Thin films and bulk glasses suitable for optical waveguides can be formed directly in one processing step as can powders and microspheres. The materials synthesised are of a high purity with low oxide impurities and only trace levels of transition metal ions.

专利号:US-2011171816-A1
优先权日:2007-10-18
标题:Synthesis of germanium sulfide and related compounds for solid electrolytic memory elements and other applications
发明人：TOMPA GARY S; COLEMAN ELANE; PROVOST LLOYD G
权利人:STRUCTURED MATERIALS INC
摘要:A method for making high purity GeS and related compounds such as Germanium Silicon Sulfide (GeSiS); Copper Sulfide (CuS); Silicon Sulfide (SiS); Zinc Sulfide (ZnS) and Iron Sulfide (FeS) at low temperatures and pressures in a Chemical Vapor Deposition (CVD) process for solid electrolyte memory elements and other applications. Disclosed is a method of generating a proper chemical and energy environment for the formation of GeS and related compounds on a specific surface. The produced films have utility in memory and other devices. The technology offers cost savings and the advantage of low temperature film creation through the use of plasma assisted deposition—increasing its compatibility for use not only on silicon (or ceramic or glass) non metal substrates as well as polymer or thin metal foil substrates which would be damaged by higher temperature processes.

专利号:WO-2005035455-A1
优先权日:2003-10-10
标题:Synthesis of germanium sulphide and related compounds

专利号:GB-0323805-D0
优先权日:2003-10-10
标题:Synthesis of germanium sulphide and related compounds